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silicon rfic 2.5 ghz frequency up-converter for wireless transceiver upc8172tb description the upc8172tb is a silicon monolithic integrated circuit designed as a frequency up-converter for a wireless trans- ceiver transmitter stage. this ic is manufactured using nec's 30 ghz f max uhs0 (ultra high speed process) silicon bipolar process. this ic has the same circuit current as the conven- tional upc8106tb, but operates at higher frequency, higher gain and lower distortion. such performance and operation from a 3 volts supply makes this device ideal for mobile communications and wireless lan applications. nec's stringent quality assurance and test procedures ensure the highest reliability and performance. california eastern laboratories pcs1900 mhz 2.4 ghz band transmitter/receiver system (wireless lan, etc.) applications part number upc8172tb package outline s06 symbols parameters and conditions 1 units min typ max i cc circuit current (no signal) ma 5.5 9.0 13.0 i cc(ps) circuit current in power save mode, v ps = 0 v a 2 cg1 f rfout = 0.9 ghz, p ifin = -30 dbm db 6.5 9.5 12.5 cg2 conversion gain, f rfout = 1.9 ghz, p ifin = -30 dbm db 5.5 8.5 11.5 cg3 f rfout = 2.4 ghz, p ifin = -30 dbm db 5.0 8.0 11.0 p o(sat)1 f rfout = 0.9 ghz, p ifin = 0 dbm dbm -2.5 0.5 p o(sat)2 saturated rf output power, f rfout = 1.9 ghz, p ifin = 0 dbm dbm -3.5 0 p o(sat)3 f rfout = 2.4 ghz, p ifin = 0 dbm dbm -4.0 -0.5 output third-order distortion intercept point, oip 3 1f rfout = 0.9 ghz f ifin 1 = 240 mhz dbm 7.5 oip 3 2f rfout = 1.9 ghz f ifin 2 = 241 mhz dbm 6.0 oip 3 3f rfout = 2.4 ghz dbm 4.0 input third-order distortion intercept point, iip 3 1f rfout = 0.9 ghz f ifin 1 = 240 mhz dbm -2.0 iip 3 2f rfout = 1.9 ghz f ifin 2 = 241 mhz dbm -2.5 iip 3 3f rfout = 2.4 ghz dbm -4.0 ssb?f1 f rfout = 0.9 ghz, f ifin 1 = 240 mhz db 9.5 ssb?f2 ssb noise figure, f rfout = 1.9 ghz, f ifin 1 = 240 mhz db 10.4 ssb?f3 f rfout = 2.4 ghz, f ifin 1 = 240 mhz db 10.6 t ps(rise) power save response time rise time, v ps : gnd v cc ? 1 t ps(fall) fall time, v ps : v cc gnd ? 1.5 electrical characteristics (t a = 25?, v cc = v rf out = 3.0 v, f ifin = 240 mhz, p loin = -5 dbm, and v ps 2.7 v unless otherwise specified)) note: 1. f rfout < f loin @ f rfout = 0.9 ghz f loin < f rfout @ f rfout = 1.9 ghz/2.4 ghz block diagram (top view) lo input gnd if input ps v cc rf output recommended operating frequency: f rfout = 0.8 to 2.5 ghz supply voltage: v cc = 2.7 to 3.3 v higher ip 3 and conversion gain: cg = 9.5 db typ oip 3 = +7.5 dbm typ @ f rfout = 0.9 ghz high-density surface mounting: 6-pin super minimold package features
symbols parameters units min typ max v cc supply voltage 1 v 2.7 3.0 3.3 t a operating ambient temperature ? c -40 +25 +85 p loin local input level 2 dbm -10 -5 0 f rfout rf output frequency 3 ghz 0.8 2.5 f ifin if input frequency mhz 50 400 absolute maximum ratings 1 (t a = +25 c unless otherwise specified) upc8172tb recommended operating conditions note: 1. same voltage applied to pins 5 and 6. 2. z s = 50 (without matching). 3. with external matching circuit. symbols parameters units ratings v cc supply voltage v 3.6 v ps ps pin input voltage v 3.6 p d power dissipation 2 mw 270 t a operating ambient c -40 to +85 temperature t stg storage temperature c -55 to +150 p in input power dbm +10 notes: 1. operation in excess of any one of these conditions may result in permanent damage. 2. mounted on a double-sided copper clad 50x50x1.6 mm epoxy glass pwb, t a = +85 c. part number i cc f rfout cg (db oip 3 (dbm) (ma) (ghz) @rf 0.9 ghz 2 @rf 1.9 ghz @rf 2.4 ghz @rf 0.9 ghz 2 @rf 1.9 ghz @rf 2.4 ghz upc8172tb 9 0.8 to 2.5 9.5 8.5 8.0 +7.5 +6.0 +4.0 upc8106tb 9 0.4 to 2.0 9 7 +5.5 -1.0 upc8109tb 5 0.4 to 2.0 6 4 +1.5 +2.0 upc8163tb 16.5 0.8 to 2.0 9 5.5 +9.5 +6.0 series products 1 (t a = +25 c, v cc = v rfout = 3.0 v, z s = z l = 50 ) notes: 1. typical performance. 2. f rfout = 0.83 ghz @ upc8163tb pin pin applied pin function and explanation equivalent circuit no. name voltage voltage (v) (v) 1 ifinput 1.4 2 gnd gnd 3 loinput 2.3 5v cc 2.7 to 3.3 6 rfoutput same bias as v cc through external inductor 4psv cc /gnd pin functions (voltage is measured at v cc = v ps = v rfout = 3.0 v) gnd pin. ground pattern on the board should be formed as wide as possible. track length should be kept as short as possible to minimize ground inductance. this pin is the if input pin to the double balanced mixer (dbm). the input is designed as a high impedance. the circuit helps suppress spurious signals. also this symmetrical circuit can keep specified performance insensitive to process- condition distribution. for that reason, a double balanced mixer is adopted. local input pin. recommendable input level is -10 to 0 dbm. this pin is the rf output from the double balanced mixer. this pin is designed as an open collector. due to the high impedance output, this pin should be externally equipped with an lc matching circuit to the next stage. supply voltage pin. power save control pin. bias controls operate as follows: pin bias control v cc operation gnd power save 3 5 1 6 2 5 4 2 v cc gnd
typical performance curves (ta = 25 c) upc8172tb t a = +25 c t a = -40 c t a = +85 c no signal v cc = v ps 12 10 8 6 4 2 0 01 234 12 10 8 6 4 2 0 01234 v cc = 3.0 v 15 10 5 0 -5 -10 -15 -30 -25 -20 -15 -10 -5 0 5 10 f rfout = 900 mhz f loin = 1140 mhz p ifin = -30 dbm v cc = v ps v cc = 3.0 v 5 0 -5 -10 -15 -20 -25 -30 -25 -20 -15 -10 -5 0 5 10 f rfout = 900 mhz f loin = 1140 mhz p loin = -5 dbm v cc = v ps v cc = 3.0 v 15 10 5 0 -5 -10 -15 v cc = 3.0 v f rfout = 1.9 ghz f loin = 1660 mhz p loin = -30 dbm v cc = v ps -30 -25 -20 -15 -10 -5 0 5 10 circuit current vs. supply voltage supply voltage, v cc (v) circuit current, i cc (ma) circuit current, i cc (ma) ps pin input voltage, v ps (v) ps pin control response time conversion gain vs. local input level local input level, p loin (dbm) circuit current vs. ps pin input voltage conversion gain, cg (db) rf output level vs. if input level rf output level, p rfout (dbm) if input level, p ifin (dbm) conversion gain vs. local input level local input level, p loin (dbm) conversion gain, cg (db) ref lvl = 0 dbm att = 10 db 10 db/div (vertical axis) center = 0.9 ghz span = 0 hz rbw = 3 mhz vbw = 3 mhz swp = 50 sec 5 sec/div (horizontal axis)
5 0 -5 -10 -15 -20 -25 -30 -25 -20 -15 -10 -5 0 5 10 f rfout = 1.9 ghz f loin = 1660 mhz p loin = -5 dbm v cc = v ps v cc = 3.0 v typical performance curves (ta = 25 c) upc8172tb rf output level vs. if input level if input level, p ifin (dbm) rf output level, p rfout (dbm) 15 10 5 0 5 10 15 30 25 20 15 10 50 510 v cc = 3.0 v f rfout = 2.4 ghz f loin = 2160 mhz p ifin = 30 dbm v cc = v ps 5 0 5 10 15 20 25 30 25 20 15 10 50 510 v cc = 3.0 v f rfout = 2.4 ghz f loin = 2160 mhz p loin = 5 dbm v cc = v ps 10 0 10 20 30 40 50 60 70 80 30 25 20 15 10 50 5 t a = +25 c vcc = vps = 3.0 v f rfout = 900 mhz f ifin1 = 240 mhz f ifin2 = 241 mhz f loin = 1140 mhz p loin = 5 dbm 10 0 10 20 30 40 50 60 70 80 30 25 20 15 10 50 5 t a = +25 c vcc = v ps = 3.0 v f rfout = 1.9 ghz f ifin1 = 240 mhz f ifin2 = 241 mhz f loin = 1660 mhz p loin = 5 dbm 10 0 10 20 30 40 50 60 70 80 30 25 20 15 10 50 5 t a = +25 c vcc = v ps = 3.0 v f rfout = 2.4 ghz f ifin1 = 240 mhz f ifin2 = 241 mhz f loin = 2160 mhz p loin = 5 dbm rf output level vs. if input level if input level, p ifin (dbm) rf output level, p rfout (dbm) conversion gain vs. local input level local input level, p loin (dbm) conversion gain, cg (db) im 3 , rf output level vs. if input level 3rd order intermodulation distortion, im 3 (dbm) rf output level of each tone, p rfout (dbm) if input level, p ifin (dbm) im 3 , rf output level vs. if input level 3rd order intermodulation distortion, im 3 (dbm) rf output level of each tone, p rfout (dbm) if input level, p ifin (dbm) im 3 , rf output level vs. if input level 3rd order intermodulation distortion, im 3 (dbm) rf output level of each tone, p rfout (dbm) if input level, p ifin (dbm)
0 0 10 20 30 40 50 0.5 1 1.5 2 2.5 3 f rfout = 900 mhz p loin = 5 dbm vcc = v ps = 3.0 v 0 0 10 20 30 40 50 0.5 1 1.5 2 2.5 3 f rfout = 1.9 ghz p loin = 5 dbm vcc = v ps = 3.0 v 0 0 10 20 30 40 50 0.5 1 1.5 2 2.5 3 f rfout = 900 mhz p loin = 5 dbm vcc = v ps = 3.0 v 0 0 10 20 30 40 50 0.5 1 1.5 2 2.5 3 f rfout = 1.9 ghz p loin = 5 dbm vcc = v ps = 3.0 v 0 0 10 20 30 40 50 0.5 1 1.5 2 2.5 3 f rfout = 2.4 ghz p loin = 5 dbm vcc = v ps = 3.0 v 0 0 10 20 30 40 50 0.5 1 1.5 2 2.5 3 f rfout = 2.4 ghz p loin = 5 dbm vcc = v ps = 3.0 v typical performance curves (ta = 25 c) local leakage at if pin vs. local input frequency local input frequency, f loin (ghz) local leakage at if pin, lo if (dbm) local leakage at if pin vs. local input frequency local input frequency, f loin (ghz) local leakage at if pin lo if (dbm) local leakage at rf pin vs. local input frequency local input frequency, f loin (ghz) local leakage at rf pin, lo rf (dbm) local leakage at rf pin vs. local input frequency local input frequency, f loin (ghz) local leakage at rf pin lo rf, (dbm) local leakage at rf pin vs. local input frequency local input frequency, f loin (ghz) local leakage at rf pin lo rf, (dbm) local leakage at if pin vs. local input frequency local input frequency, f loin (ghz) local leakage at if pin lo rf, (dbm) upc8172tb
system application example wireless transceiver phase shifter 0? 90 ? demo i q i q n pll pll upc8172tb rx sw tx pa lna vco upc8172tb
s-parameters for each port (v cc = v ps = v rfout = 3.0 v) (the paramters are monitored at dut pins) lo port s 11 z ref 1.0 units 1 200.0 munits/ 21.625 -91.148 hp marker 1 1.15 ghz marker 2 1.65 ghz marker 3 2.15 ghz rf port (without matching) s 22 z ref 1.0 units 1 200.0 munits/ 71.5 -240.34 hp marker 1 900 mhz marker 2 1.9 ghz marker 3 2.5 ghz if port s 11 z ref 1.0 units 1 200.0 munits/ 332.63 -601.34 hp marker 1 240.0 mhz 1 2 3 3 2 1 1 start 0.400000000 ghz stop 2.500000000 ghz start 0.400000000 ghz stop 2.500000000 ghz start 0.100000000 ghz stop 1.000000000 ghz upc8172tb
test circuit 1 (f rfout = 900 mhz) 50 50 signal generator signal generator 100 pf 100 pf c 1 c 2 1 2 3 gnd lo input if input rf output v cc ps 6 5 4 c 8 c 3 c 4 c 6 c 7 c 5 10 nh 1000 pf 1 f 1 f 68 pf 100 pf 100 pf 1 pf l 50 spectrum analyzer v cc strip line upc8172tb example of test circuit 1 assembled on evaluation board ps c 6 c 7 c 5 v cc c 3 c 2 c 1 c 8 gnd loinput ifinput upc8172tb ps bias voltage supply rfoutput l c 4 form symbol value chip capacitor c 1 , c 2 , c 3 100 pf c 4 1000 pf c 5 , c 6 1 f c 7 68 pf c 8 1 pf chip inductor l 10 nh 1 note: 1. 10 nh: ll1608-fh10n (toko co., ltd.) component list (*1) 35x42x0.4 mm polymide board, double-sided copper clad (*2) ground pattern on rear of the board (*3) solder plated patterns (*4) : through holes
test circuit 2 (f rfout = 1.9 ghz) example of test circuit 2 assembled on evaluation board form symbol value chip capacitor c 1 , c 2 , c 3 100 pf c 4 1000 pf c 5 , c 6 1 f c 7 30 pf c 8 2.75 pf chip inductor l 470 nh 1 note: 1. 470 nh: ll2012-fr47 (toko co., ltd.) component list (*1) 35 x 42 x 0.4 mm polymide board, double-sided copper clad (*2) ground pattern on rear of the board (*3) solder plated patterns (*4) : through holes 50 50 signal generator signal generator 100 pf 100 pf c 1 c 2 1 2 3 gnd lo input if input rf output v cc ps 6 5 4 c 8 c 3 c 4 c 6 c 7 c 5 470 nh 1000 pf 1 f 1 f 30 pf 100 pf 100 pf l 50 spectrum analyzer v cc strip line 2.75 pf ps c 6 c 7 c 5 v cc c 3 c 2 c 1 gnd loinput ifinput upc8172tb ps bias voltage supply rfoutput l c 4 upc8172tb
test circuit 3 (f rfout = 2.4 ghz) example of test circuit 3 assembled on evaluation board form symbol value chip capacitor c 1 , c 2 , c 3 100 pf c 4 1000 pf c 5 , c 6 1 f c 7 10 pf c 8 1.75 pf chip inductor l 470 nh 1 note: 1. 470 nh: ll2012-fr47 (toko co., ltd.) component list (*1) 35 x 42 x 0.4 mm polymide board, double-sided copper clad (*2) ground pattern on rear of the board (*3) solder plated patterns (*4) : through holes ps l c 6 c 7 c 5 v cc c 3 c 8 c 2 c 1 gnd loinput ifinput upc8172tb ps bias voltage supply rfoutput c 4 50 50 signal generator signal generator 100 pf 100 pf c 1 c 2 1 2 3 gnd lo input if input rf output v cc ps 6 5 4 c 8 c 3 c 4 c 6 c 7 c 5 470 nh 1000 pf 1 f 1 f 10 pf 100 pf l 50 spectrum analyzer v cc strip line 100 pf 1.75 pf upc8172tb
upc8172tb outline dimensions (units in mm) package outline s06 note: all dimensions are typical unless otherwise specified. exclusive north american agent for rf, microwave & optoelectronic semiconductors california eastern laboratories ? headquarters ? 4590 patrick henry drive ? santa clara, ca 95054-1817 ? (408) 988-3500 ? telex 34-6393 ? fax (408) 988-0279 24-hour fax-on-demand: 800-390-3232 (u.s. and canada only) ? internet: http://www.cel.com 06/14/2001 data subject to change without notice 0 to 0.1 0.2 +0.10 -0.05 0.15 1.3 2.1 0.1 1.25 0.1 0.1 min +0.10 -0.05 2.0 0.2 0.65 0.65 0.9 0.1 0.7 pin connections pin no. pin name 1if input 2 gnd 3lo input 4ps 5v cc 6rf output block diagram (top view) lo input gnd if input ps v cc rf output 4 5 6 4 5 6 1 2 3 1 2 3 c3a (top view) (bottom view) part number quantity UPC8172TB-E3 3 k pcs/reel ordering information note: embossed tape, 8 mm wide. pins 1, 2 and 3 face the tape perforation side.

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