2008. 9. 23 1/3 semiconductor technical data KTC812E epitaxial planar npn transistor revision no : 1 general purpose application. switching application. features a super-minimold package houses 2 transistor. excellent temperature response between these 2 transistor. high pairing property in h fe . the follwing characteristics are common for q 1 , q 2 . maximum rating (ta=25 ) dim millimeters a a1 b1 c tes6 1.6 0.05 1.0 0.05 1.6 0.05 1.2 0.05 0.50 0.2 0.05 0.5 0.05 0.12 0.05 b d h j b1 b d a a1 c c j h 1 2 3 6 4 p p p5 5 + _ + _ + _ + _ + _ + _ + _ 1. q emitter 2. q base 3. q base 4. q collector 5. q emitter 6. q collector 1 1 1 2 2 2 electrical characteristics (ta=25 ) characteristic symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 150 ma base current i b 30 ma collector power dissipation p c * 200 mw junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit. collector cut-off current i cbo v cb =60v, i e =0 - - 0.1 emitter cut-off current i ebo v eb =5v, i c =0 - - 0.1 dc current gain h fe (note) v ce =6v, i c =2 120 - 400 collector-emitter saturation voltage v ce(sat) i c =100 , i b =10 - 0.1 0.3 v transition frequency f t v ce =10v, i c =1 80 - - collector output capacitance c ob v cb =10v, i e =0, f=1 - 2 3.5 noise figure nf v ce =6v, i c =0.1 , f=1 , rg=10 - 1.0 10 1 q1 23 65 4 q2 * total rating note : h fe classification y(4):120 240, gr(6):200 400 w4 123 4 5 6 lot no. type name equivalent circuit (top view) marking
2008. 9. 23 2/3 KTC812E revision no : 1 c collector current i (ma) 0 40 30 dc current gain h fe 3 1 0.3 0.1 collector current i (ma) c 0 collector-emitter voltage v (v) ce ce c i - v h - i v - i c collector current i (ma) 0.1 0.1 base-emitter saturation base current i ( a) b 0.3 0 base-emitter voltage v (v) be i - v f - i c collector current i (ma) 0.1 3k t transition frequency f (mhz) 10 collector-emitter saturation 0.01 0.1 collector current i (ma) c v - i 12345 67 80 120 160 200 240 i =0.2ma b common emitter ta=25 c fe c 10 30 100 300 50 100 300 500 1k ce(sat) c voltage v (v) ce(sat) 0.3 1 3 10 30 100 300 0.03 0.05 0.1 0.3 0.5 1 ta=100 c ta=25 c ta=-25 c common emitter i /i =10 c b c be(sat) voltage v (v) be(sat) 0.3 1 10 30 100 300 3 0.3 0.5 1 3 5 10 common emitter i /i =10 ta=25 c c b tc 0.3 1 3 10 30 100 300 30 50 100 300 500 1k common emitter v =10v ta=25 c ce b be 0.2 0.4 0.6 0.8 1.0 1.2 1 3 10 30 100 300 1k 0.5ma 0 1.0ma 2.0ma 3.0ma 5.0ma 6.0ma 10 common emitter ta=100 c ta=25 c ta=-25 c v =6v ce ce v =1v 3k common emitter v =6v ce ta=100 c ta=25 c ta =-2 5 c
2008. 9. 23 3/3 KTC812E revision no : 1 collector power dissipation p (mw) 0 c 0 ambient temperature ta ( c) pc - ta 25 50 75 100 125 50 100 150 200 250 150
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