10v drive nch mosfet R5009FNX ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1)fast reverse recovery time (t rr ) 2) low on-resistance. 3) fast switching speed. 4) gate-source voltage v gss garanteed to be 30v . 5) drive circuits can be simple. 6) parallel use is easy. ? application switching ? inner circuit ? packaging specifications package bulk basic ordering unit (pieces) 500 R5009FNX ? ? absolute maximum ratings (ta ? 25 ? c) symbol limits unit drain-source voltage v dss 500 v gate-source voltage v gss ? 30 v continuous i d ? 9a pulsed i dp ? 36 a continuous i s 9a pulsed i sp 36 a avalanche current i as 4.5 a avalanche energy e as 5.4 mj power dissipation (tc=25 )p d 50 w channel temperature tch 150 ? c range of storage temperature tstg ? 55 to +150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 l 500h, v dd =50v, rg=25 ? ,starting tch=25 ? c *3 limited only by maximum temperature allowed. ? thermal resistance symbol limits unit channel to case rth (ch-c) 2.5 ? c / w type parameter source current (body diode) drain current parameter *1 *1 *3 *3 *2 *2 to-220fm 4.5 2.8 0.75 3.2 ( 2 )( 3 ) ( 1 ) 0.8 2.54 2.6 2.54 1.3 1.2 14.0 12.0 8.02.5 10.0 15.0 (1) (3) (2) ?1 (1) gate (2) drain (3) souce * 1 body diode 1/5 2011.07 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
R5009FNX ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 100 na v gs = 30v, v ds =0v drain-source breakdown voltage v (br)dss 500 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss - - 100 ua v ds =500v, v gs =0v gate threshold voltage v gs (th) 2.0 - 4.0 v v ds =10v, i d =1ma forward transfer admittance l y fs l 4.0 5.7 - s i d =4.5a, v ds =10v input capacitance c iss - 630 - pf v ds =25v output capacitance c oss - 400 - pf v gs =0v reverse transfer capacitance c rss - 25 - pf f=1mhz turn-on delay time t d(on) - 24 - ns i d =4.5a, v dd 250v rise time t r - 20 - ns v gs =10v turn-off delay time t d(off) - 50 - ns r l =55.6 ? fall time t f - 40 - ns r g =10 ? total gate charge q g - 18 - nc i d =9.0a, v dd 250v gate-source charge q gs - 3.5 - nc v gs =10v gate-drain charge q gd - 5.5 - nc *pulsed ? body diode characteristics (source-drain) (ta = 25 ?c) symbol min. typ. max. unit forward voltage v sd - - 1.5 v i s =9.0a, v gs =0v reverse recovery time t rr 48 78 108 ns *pulsed i s =9.0a, di/dt=100a/ ? s conditions parameter conditions ? parameter static drain-source on-state resistance r ds (on) i d =4.5a, v gs =10v - 0.65 0.84 * * * * * * * * * * * 2/5 2011.07 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
R5009FNX ? electrical characteristics curves 0.1 1 10 0.1 1 10 100 t a = 25c pulsed t a = 125c t a = 75c t a = 25c t a = ? 25c 0.01 0.1 1 10 100 0 0.5 1 1.5 v gs =0v pulsed 0 0.5 1 1.5 2 -50 0 50 100 150 v gs = 10v pulsed 0 0.5 1 1.5 2 0 5 10 15 t a = 25c pulsed 0 1 2 3 4 5 6 7 8 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v gs = 4.5v t a =25c pulsed v gs = 5.0v v gs = 5.5v v gs = 6.0v v gs = 8.0v v gs = 7.0v v gs = 6.5v v gs = 10v 0 5 10 15 02040 v gs = 4.5v t a =25c pulsed v gs = 5.0v v gs = 5.5v v gs = 6.0v v gs = 8.0v v gs = 7.0v v gs = 6.5v v gs = 10v 0.001 0.01 0.1 1 10 100 01234567 v ds = 10v pulsed t a = 125c t a = 75c t a = 25c t a = ? 25c 0.1 1 10 100 -50 0 50 100 150 v ds = 10v i d =1ma 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds = 10v pulsed t a = 125c t a = 75c t a = 25c t a = ? 25c fig.1 typical output characteristics( ) fig.2 typical output characteristics( ) fig.3 typical transfer characteristics fig.4 gate threshold voltage vs. channel temperature fig.9 reverse drain current vs. sourse-drain voltage fig.8 forward transfer admittance vs. drain current drain current : i d [a] drain-source voltage : v ds [v] drain-source voltage : v ds [v] drain current : i d [a] drain current : i d [a] gate-source voltage : v gs [v] channel temperature: tch ( ) gate threshold voltage: v gs(th) (v) forward transfer admittance : |yfs| [s] drain-current : i d [a] source current : is [a] source-drain voltage : v sd [v] t a = 125c t a = 75c t a = 25c t a = ? 25c fig.5 static drain-source on-state resistance vs. drain current drain-current : i d [a] static drain-source on-state resistance : r ds ( on )[ ? ] fig.6 static drain-source on-state resistance vs. gate source voltage static drain-source on-state resistance : rds(on) [ ? ] gate-source voltage : v gs (v) fig.7 static drain-source on-state resistance vs. channel temperature static drain-source on-state resistance : rds(on) [ ? ] channel temperature: tch ( ) i d = 4.5a i d = 9a i d = 4.5a i d = 9a 3/5 2011.07 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
R5009FNX 10 100 1000 0.1 1 10 100 t a =25c pulsed 1 10 100 1000 10000 0.01 0.1 1 10 100 1000 c iss c rss t a =25c f=1mhz v gs =0v c oss 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 10000 p w =10ms t a = 25c single pulse operation in this area is limited by r ds(on) (v gs =10v) p w =100us p w =1ms 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 t a = 25c single pulse rth(ch-a)(t) = r(t)rth(ch-a) rth(ch-a) = 44.7 c/w 1 10 100 1000 10000 0.01 0.1 1 10 100 t a =25c v dd =250v v gs =10v r g =10? pulsed t d(off) t f t d(on) t r fig.10 reverse recovery time vs. source current fig.13 typical capacitance vs. drain-source voltage fig.11 switching characteristics fig.14 maximum safe operating aera fig.15 normalized transient thermal resistance vs. pulse width reverse recovery time : trr[ns] source-current : i s [v] switching time : t [ns] drain-current : i d [a] drain-source voltage : v ds [v] capacitance : c [pf] drain-source voltage : v ds [v] drain current : i d (a) pulse width : pw(s) normarized transient thermal resistance : r ( t ) 0 2 4 6 8 10 12 0 5 10 15 20 25 30 t a =25c v dd =250v i d = 9a pulsed fig.12 dynamic input characteristics gate-source voltage : v gs [v] total gate charge : qg [nc] 4/5 2011.07 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
R5009FNX ? measurement circuits v gs r g v d s d.u.t. i as l v dd i as v dd v (br)ds s i as 2 l e as = v (br)dss - v dd v (br)dss 1 2 v gs r g v d s d.u.t. i d r l v dd 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) v g v gs charge q g q gs q gd v gs i g(const.) v d s d.u.t. i d r l v dd fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform fig.3-1 avalanche measurement circuit fig.3-2 avalanche waveform 5/5 2011.07 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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