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  sfh 2302 schnelle pin-fotodiode high speed pin-photodiode lead (pb) free produc t - rohs compliant 2007-04-27 1 wesentliche merkmale ? speziell geeignet fr anwendungen von 400nm bis 1050nm  sehr kurze schaltzeit im spezifizierten wellenl?ngenbereich  sehr kurze schaltzeit bei geringer sperrspannung (<5v)  extrem kurze abklingzeit (?slow tail?)  3 mm-plastikbauform im led-geh?use anwendungen  optische laufwerke (cd, dvd)  lichtschranken fr gleich- und wechselbetrieb  industrieelektronik  ?messen/steuern/regeln? lwl  abstandsmesser typ type bestellnummer ordering code sfh 2302 q65110a6343 features  especially suitable for applications from 400nm to 1050nm  fast switching time within the specified wavelength  fast switching time at low reverse voltage (<5v)  ultra short decay time (?slow tail?)  3 mm led plastic package applications  optical disc drives (cd, dvd)  photointerrupters  industrial electronics  for control and drive circuits  fibre optic transmission systems  range finders
2007-04-27 2 sfh 2302 grenzwerte maximum ratings bezeichnung parameter symbol symbol wert value einheit unit betriebs- und lagertemperatur operating and storage temperature range t op ; t stg ? 40 ? + 100 c sperrspannung reverse voltage v r 15 v sperrspannung, t <120 s reverse voltage v r 20 v verlustleistung total power dissipation p tot 150 mw elektrostatische entladung electrostatic discharge human body model accord ing to eos/esd-5.1-1993 esd 2 kv kennwerte (t a = 25 c) characteristics bezeichnung parameter symbol symbol wert value einheit unit min typ max spektrale fotoempfindlichkeit des chips spectral sensitivity of the chip = 650nm = 780nm s max 0.45 0.5 a/w fotostrom, v r = 5 v , e e = 0.5 mw/cm 2 photocurrent = 650nm = 780nm i p 10 11 a wellenl?nge der max. fotoempfindlichkeit wavelength of max. sensitivity s max 820 nm spektraler bereich der fotoempfindlichkeit spectral range of sensitivity s = 10% of s max 400..1050 nm abmessung der bestrahlungsempfindlichen fl?che dimensions of radi ant sensitive area l b l w 0.6 0.6 mm mm abstand chipoberfl?che zu geh?useoberfl?che distance chip front to case surface h 2.4 ? 2.8 mm
sfh 2302 2007-04-27 3 halbwinkel half angle ? 17 grad deg. dunkelstrom, v r = 5 v dark current i r 0.05 5 na anstiegs- und abfallzeit des fotostromes rise and fall time of the photocurrent, 10% - 90% v r = 5 v , r l = 50 ?; = 650 nm; i p = 1 ma v r = 5 v , r l = 50 ?; = 780 nm; i p = 1 ma t r , t f t r , t f 1.8 2.0 ns ns kapazit?t, f = 1 mhz, e = 0, v r = 0 v capacitance c 0 3 5 pf temperaturkoeffizient von i p temperature coefficient of i p = 650 nm = 780 nm tc i -0.03 -0.01 %/k %/k rausch?quivalente strahlungsleistung 1) noise equivalent power, v r = 5 v, = 650 nm 8.9 10 -15 1) kennwerte (t a = 25 c) characteristics (cont?d) bezeichnung parameter symbol symbol wert value einheit unit min typ max w hz ----------- - nep 17,9 15 ? 10 i r s --------- =
sfh 2302 2007-04-27 4 relative spectral sensitivity s rel = f ( ) dark current i r = f ( v r ), e = 0 directional characteristics s rel = f ( ? ) ohf00815 0 rel s % 400 500 600 700 800 900 nm 1100 10 20 30 40 50 60 70 80 90 100 ohf03904 v r r i na 0v 0 0.02 0.04 0.06 0.08 0.12 5 10 15 20 total power dissipation ptot = f(t a ) dark current i r = f ( t a ), e = 0, v r = 5 v 0,01 0,1 1 10 100 25 35 45 55 65 75 85 t a i r c na capacitance c 0 = f ( v r ), e = 0 switching time t r , t f = f ( v r ) ohf03901 0 v -3 10 -2 10 -1 10 0 10 1 10 2 10 v pf c 1 2 3 4 ohf03917 v r r t ns 0v 0 , f t 2 4 6 8 10 12 16 1 2 3 4 5 6 7 8
sfh 2302 2007-04-27 5 ma?zeichnung package outlines ma?e in mm (inch) / dimensions in mm (inch) empfohlenes l?tpaddesign wellenl?ten (ttw) recommended solder pad ttw soldering ma?e in mm (inch) / dimensions in mm (inch) 0.6 (0.024) 0.4 (0.016) 4.0 (0.157) 3.6 (0.142) ?3.1 (0.122) ?2.9 (0.114) 4.1 (0.161) 3.9 (0.154) 5.2 (0.205) 4.5 (0.177) 3.5 (0.138) 6.3 (0.248) 5.9 (0.232) 1.8 (0.071) 1.2 (0.047) 29 (1.142) 27 (1.063) 2.54 (0.100) spacing 0.7 (0.028) 0.4 (0.016) chip position collector (transistor) area not flat geoy6653 0.4 (0.016) 0.8 (0.031) cathode (diode) 4 (0.157) ohlpy985 4.8 (0.189)
2007-04-27 6 sfh 2302 l?tbedingungen soldering conditions wellenl?ten ttw (nach cecc 00802) ttw soldering (acc. to cecc 00802) published by osram opto semico nductors gmbh wernerwerkstrasse 2, d-93049 regensburg www.osram-os.com ? all rights reserved. the information describes the type of component and shall not be considered as assured characteristics. terms of delivery and rights to change design reserv ed. due to technical requirements components may contain dangerous substances. for information on the types in question please contact our sales organization. packing please use the recycling operators known to you. we can also help you ? get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of tr ansport. for packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. components used in life-support devices or system s must be expressly authorized for such purpose! critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of osram os. 1 a critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support de vice or system, or to affect its safety or effectiveness of that device or system. 2 life support devices or systems are intended (a) to be impl anted in the human body, or (b) to support and/or maintain and sustain human life. if they fail, it is reasonable to assume that the health of the user may be endangered. ohly0598 0 0 50 100 150 200 250 50 100 150 200 250 300 t t c s 235 c 10 s c ... 260 1. welle 1. wave 2. welle 2. wave 5 k/s 2 k/s ca 200 k/s cc ... 130 100 2 k/s zwangskhlung forced cooling normalkurve standard curve grenzkurven limit curves


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