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savantic semiconductor product specification silicon pnp power transistors 2SA1280 d escription with to-220f package high breakdown voltage high power dissipation applications for use in low frequency power amplifier color tv vertical deflection output pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -150 v v ceo collector-emitter voltage open base -150 v v ebo emitter-base voltage open collector -6 v i c collector current -1.5 a p c collector dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220f) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1280 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma ; i b =0 -150 v v cesat collector-emitter saturation voltage i c =-500ma;i b =-50ma -3.0 v v be base-emitter on voltage i c =-50ma ; v ce =-4v -1.0 v i cbo collector cut-off current v cb =-120v;i e =0 -1 a i ebo emitter cut-off current v eb =-6v; i c =0 -1 a h fe-1 dc current gain i c =-50ma ; v ce =-4v 60 200 h fe-2 dc current gain i c =-500ma ; v ce =-10v 60 f t transition frequency i c =-500ma ; v ce =-10v 4 mhz c ob output capacitance i e =0 ; v cb =-100v;f=1mhz 30 pf
savantic semiconductor product specification 3 silicon pnp power transistors 2SA1280 package outline fig.2 outline dimensions

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