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| savantic semiconductor product specification silicon pnp power transistors 2SB816 d escription with to-3pn package complement to type 2sd1046 wide area of safe operation applications for lf power amplifier, 50w output large power switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -150 v v ceo collector-emitter voltage open base -120 v v ebo emitter-base voltage open collector -6 v i c collector current -8 a i cp collector current-peak -12 a p c collector power dissipation t c =25 80 w t j junction temperature 150 t stg storage temperature -40~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB816 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma ;r be = ; -120 v v (br)cbo collector-base breakdown voltage i c =-5ma ;i e =0 -150 v v (br)ebo emitter-base breakdown voltage i e =-5ma ;i c =0 -6 v v cesat collector-emitter saturation voltage i c =-5a; i b =-0.5a -1.0 -2.0 v v be base-emitter on voltage i c =-1a;v ce =-5v -1.5 v i cbo collector cut-off current v cb =-80v; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-4v; i c =0 -0.1 ma h fe-1 dc current gain i c =-1a ; v ce =-5v 60 200 h fe-2 dc current gain i c =-5a ; v ce =-5v 20 f t transition frequency i c =-1a ; v ce =-5v 15 mhz c ob collector output capacitance f=1mhz;v cb =-10v 220 pf switching times t on turn-on time 0.22 s t stg storage time 0.93 s t f fall time i c =-1.0a ;i b1 =-i b2 =-0.1a v cc =20v;r l =20 c 0.37 s h fe-1 classifications d e 60-120 100-200 savantic semiconductor product specification 3 silicon pnp power transistors 2SB816 package outline fig.2 outline dimensions (unindicated tolerance: 0.10mm) savantic semiconductor product specification 4 silicon pnp power transistors 2SB816 |
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