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| bsz050n03ls g !"#$ %!& ? 3 power-mosfet features ? fast switching mosfet for smps ? optimized technology for dc/dc converters ? qualified according to jedec 1) for target applications ? n-channel; logic level ? excellent gate charge x r ds(on) product (fom) ? very low on-resistance r ds(on) ? superior thermal resistance ? avalanche rated ? pb-free plating; rohs compliant ? halogen-free according to iec61249-2-21 maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d v gs =10 v, t c =25 c 40 a v gs =10 v, t c =100 c 40 v gs =4.5 v, t c =25 c 40 v gs =4.5 v, t c =100 c 40 v gs =10 v, t a =25 c, r thja =60 k/w 2) 16 pulsed drain current 3) i d,pulse t c =25 c 160 avalanche current, single pulse 4) i as t c =25 c 20 avalanche energy, single pulse e as i d =20 a, r gs =25 w 70 mj reverse diode d v /d t d v /d t i d =40 a, v ds =24 v, d i /d t =200 a/s, t j,max =150 c 6 kv/s gate source voltage v gs 20 v value 1) j-std20 and jesd22 v ds 30 v r ds(on),max 5 m w i d 40 a product summary type package marking bsz050n03ls g pg-tsdson-8 050n03l pg-tsdson-8 rev. 1.3 page 1 2009-11-05
bsz050n03ls g maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit power dissipation p tot t c =25 c 50 w t a =25 c, r thja =60 k/w 2) 2.1 operating and storage temperature t j , t stg -55 ... 150 c iec climatic category; din iec 68-1 55/150/56 parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 2.5 k/w device on pcb r thja 6 cm 2 cooling area 2) - - 60 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =1 ma 30 - - v gate threshold voltage v gs(th) v ds = v gs , i d =250 a 1 - 2.2 zero gate voltage drain current i dss v ds =30 v, v gs =0 v, t j =25 c - 0.1 1 a v ds =30 v, v gs =0 v, t j =125 c - 10 100 gate-source leakage current i gss v gs =20 v, v ds =0 v - 10 100 na drain-source on-state resistance r ds(on) v gs =4.5 v, i d =20 a - 6.2 7.8 m w v gs =10 v, i d =20 a - 4.2 5 gate resistance r g 0.7 1.4 2.5 w transconductance g fs | v ds |>2| i d | r ds(on)max , i d =30 a 38 76 - s 3) see figure 3 for more detailed information value values 2) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. rev. 1.3 page 2 2009-11-05 bsz050n03ls g parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 2100 2800 pf output capacitance c oss - 790 1100 reverse transfer capacitance c rss - 41 - turn-on delay time t d(on) - 5.2 - ns rise time t r - 4.0 - turn-off delay time t d(off) - 21 - fall time t f - 3.6 - gate charge characteristics 5) gate to source charge q gs - 6.3 8.4 nc gate charge at threshold q g(th) - 3.2 4.3 gate to drain charge q gd - 2.9 4.8 switching charge q sw - 6.0 8.9 gate charge total q g - 13 17 gate plateau voltage v plateau - 3.1 - v gate charge total q g v dd =15 v, i d =30 a, v gs =0 to 10 v - 26 35 gate charge total, sync. fet q g(sync) v ds =0.1 v, v gs =0 to 4.5 v - 11 14 nc output charge q oss v dd =15 v, v gs =0 v - 20 27 reverse diode diode continuous forward current i s - - 40 a diode pulse current i s,pulse - - 160 diode forward voltage v sd v gs =0 v, i f =20 a, t j =25 c - 0.82 1.1 v reverse recovery charge q rr v r =15 v, i f = i s , d i f /d t =400 a/s - - 15 nc 5) see figure 16 for gate charge parameter definition 4) see figure 13 for more detailed information t c =25 c values v gs =0 v, v ds =15 v, f =1 mhz v dd =15 v, v gs =10 v, i d =30 a, r g =1.6 w v dd =15 v, i d =30 a, v gs =0 to 4.5 v rev. 1.3 page 3 2009-11-05 bsz050n03ls g 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); v gs ! 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 10 ms dc 10 2 10 1 10 0 10 -1 10 3 10 2 10 1 10 0 10 -1 v ds [v] i d [ a ] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 0.01 0.1 1 10 0 0 0 0 0 0 1 t p [s] z t h j c [ k / w ] 0 10 20 30 40 50 60 0 40 80 120 160 t c [c] p t o t [ w ] 0 10 20 30 40 50 0 40 80 120 160 t c [c] i d [ a ] rev. 1.3 page 4 2009-11-05 bsz050n03ls g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 3.5 v 4 v 4.5 v 5 v 10 v 11.5 v 0 2 4 6 8 10 0 10 20 30 40 50 i d [a] r d s ( o n ) [ m w w w w ] 25 c 150 c 0 40 80 120 160 0 1 2 3 4 5 v gs [v] i d [ a ] 0 45 90 135 180 0 40 80 120 160 i d [a] g f s [ s ] 2.8 v 3 v 3.2 v 3.5 v 4 v 4.5 v 5 v 10 v 0 40 80 120 160 0 1 2 3 v ds [v] i d [ a ] rev. 1.3 page 5 2009-11-05 bsz050n03ls g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =20 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds ; i d =250 a 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ 98 % 0 2 4 6 8 -60 -20 20 60 100 140 180 t j [c] r d s ( o n ) [ m w w w w ] 0 0.5 1 1.5 2 2.5 -60 -20 20 60 100 140 180 t j [c] v g s ( t h ) [ v ] ciss coss crss 10 4 10 3 10 2 10 1 10 100 1000 10000 0 5 10 15 20 25 30 v ds [v] c [ p f ] 25 c 150 c 25 c, 98% 150 c, 98% 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 v sd [v] i f [ a ] rev. 1.3 page 6 2009-11-05 bsz050n03ls g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 w v gs =f( q gate ); i d =30 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma 20 22 24 26 28 30 32 34 -60 -20 20 60 100 140 180 t j [c] v b r ( d s s ) [ v ] v gs q g ate v g s(th) q g (th) q g s q g d q sw q g 25 c 100 c 125 c 1 10 100 1 10 100 1000 t av [s] i a v [ a ] 6 v 15 v 24 v 0 2 4 6 8 10 12 0 10 20 30 q gate [nc] v g s [ v ] rev. 1.3 page 7 2009-11-05 bsz050n03ls g package outline pg-tsdson-8 rev. 1.3 page 8 2009-11-05 bsz050n03ls g ! " # $ $ % & ' & ( ) * " + " ! ! " ! ! # +,-.<=>c%., $ contact the nearest infineon technologies office (www.infineon.com). h><,%,1& % & $ & ' # ! ! # ( rev. 1.3 page 9 2009-11-05 |
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