HAT2137H silicon n channel power mos fet power switching ade-208-1579b (z) preliminary 3rd. edition dec. 2002 features ? capable of 7 v gate drive ? low drive current ? high density mounting ? low on-resistance r ds(on) = 3.8 m ? typ. (at v gs = 10 v) outline lfpak 1 2 3 4 5 1, 2, 3 source 4 gate 5 drain g d sss 4 1 23 5
HAT2137H rev.2, dec. 2002, page 2 of 10 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 40 v gate to source voltage v gss 20 v drain current i d 45 a drain peak current i d(pulse) note1 180 a body-drain diode reverse drain current i dr 45 a avalanche current i ap note 3 30 a avalanche energy e ar note 3 72 mj channel dissipation pch note2 30 w channel temperature tch 150 c storage temperature tstg ?55 to + 150 c notes: 1. pw 10 s, duty cycle 1% 2. tc = 25c 3. value at tch = 25c, rg 50 ?
HAT2137H rev.2, dec. 2002, page 3 of 10 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 40 ? ? v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 20 ? ? v i g = 100 a, v ds = 0 gate to source leak current i gss ?? 10 av gs = 16 v, v ds = 0 zero gate voltage drain current i dss ??1 av ds = 40 v, v gs = 0 gate to source cutoff voltage v gs(off) 2.0 ? 3.5 v v ds = 10 v, i d = 1 ma static drain to source on state r ds(on) ?3.84.8m ? i d = 22.5 a, v gs = 10 v note3 resistance r ds(on) ?4.46.0m ? i d = 22.5 a, v gs = 7 v note3 forward transfer admittance |y fs | 3864? s i d = 22.5 a, v ds = 10 v note3 input capacitance ciss ? 6200 ? pf v ds = 10 v output capacitance coss ? 780 ? pf v gs = 0 reverse transfer capacitance crss ? 410 ? pf f = 1 mhz total gate charge qg ? 95 ? nc v dd = 10 v gate to source charge qgs ? 24 ? nc v gs = 10 v gate to drain charge qgd ? 14 ? nc i d = 45 a turn-on delay time t d(on) ?27?nsv gs = 10 v, i d = 22.5 a rise time t r ?50?nsv dd ? 10 v turn-off delay time t d(off) ?90?nsr l = 0.44 ? fall time t f ? 14 ? ns rg = 4.7 ? body?drain diode forward voltage v df ? 0.84 1.10 v if = 45 a, v gs = 0 note3 body?drain diode reverse recovery time t rr ? 40 ? ns if = 45 a, v gs = 0 dif/ dt = 100 a/ s notes: 3. pulse test
HAT2137H rev.2, dec. 2002, page 4 of 10 main characteristics drain to source voltage v (v) ds drain current i (a) d typical output characteristics gate to source voltage v (v) gs drain current i (a) d typical transfer characteristics 50 40 30 20 10 0 246810 50 40 30 20 10 0 1234 5 tc = 75 c 25 c -25 c v = 10 v pulse test ds v = 3.2 v gs 10 v 4.0 v 3.4 v 3.6 v 3.8 v pulse test drain to source voltage v (v) ds drain current i (a) d maximum safe operation area 100 10 1 0.1 0.01 0.1 0.3 1 3 10 30 100 500 tc = 25 c 1 shot pulse pw = 10 ms 10 s 100 s operation in this area is limited by r ds(on) dc operation 1 ms channel dissipation pch (w) case temperature tc (?c) power vs. temperature derating 40 30 20 10 0 50 100 150 200
HAT2137H rev.2, dec. 2002, page 5 of 10 1000 0.3 100 10 1 0.1 30 3 1 3 10 30 100 200 static drain to source on state resistance vs. drain current r ds(on) (m ? ) drain to source on state resistance drain current i d (a) 0.1 3 0.3 1 30 1000 100 300 10 0.3 100 10 1 0.1 30 3 r ds(on) (m ? ) 0 150 75 100 125 50 25 0 -25 10 8 6 4 2 20 16 12 8 4 0 500 400 300 200 100 forward transfer admittance vs. drain current drain current i d (a) forward transfer admittance |yfs| (s) static drain to source on state resistance vs. temperature static drain to source on state resistance case temperature tc ( c) drain to source saturation voltage vs. gate to source voltage drain to source voltage v ds(on) (mv) gate to source voltage v gs (v) 20 a 10 a i d = 50 a pulse test pulse test 10 v v gs = 7 v 50 a pulse test 10 v 10 a, 20 a, 50a v gs = 7 v i d = 20 a, 10 a 25 c 75 c v ds = 10 v pulse test tc = -25 c
HAT2137H rev.2, dec. 2002, page 6 of 10 capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage drain current i d (a) switching time t (ns) switching characteristics 0 10203040 10000 3000 1000 300 100 30 10 ciss coss crss v gs = 0 f = 1 mhz 50 40 30 20 10 0 20 16 12 8 4 40 80 120 160 200 0 i d = 50 a v gs v ds v dd = 25 v 10 v 5 v v dd = 25 v 10 v 5 v gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v (v) gs dynamic input characteristics 0.1 0.3 1 3 10 30 100 100 20 50 10 di / dt = 50 a / s v gs = 0, ta = 25 c reverse drain current i dr (a) reverse recovery time trr (ns) body-drain diode reverse recovery time 100 1000 200 20 10 0.1 0.2 2 10 10 0 20 1 0.5 5 500 50 50 v = 10 v , v = 10 v rg = 4.7 , duty < 1 % gs ds ? t r t d(on) t d(off) t f
HAT2137H rev.2, dec. 2002, page 7 of 10 source to drain voltage v sd (v) reverse drain current i dr (a) reverse drain current vs. source to drain voltage d. u. t rg i monitor ap v monitor ds v dd 50 ? vin 15 v 0 i d v ds i ap v (br)ds s l v dd e ar = l ? i ap 2 ? 2 1 v v - v dss dss dd avalanche test circuit avalanche waveform 100 80 60 40 20 25 50 75 100 125 150 0 channel temperature tch ( c) repetitive avalanche energy e ar (mj) maximum avalanche energy vs. channel temperature derating i ap = 30 a v dd = 15 v duty < 0.1 % rg > 50 ? 50 40 30 20 10 0 0.4 0.8 1.2 1.6 2.0 pulse test 5 v v gs = 0 10 v
HAT2137H rev.2, dec. 2002, page 8 of 10 vin monitor d.u.t. vin 10 v r l v = 10 v ds tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 90% 10% t f switching time test circuit switching time waveform rg pulse width pw (s) normalized transient thermal impedance vs. pulse width normalized transient thermal impedance s (t) 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m 100 m 1 10 tc = 25?c d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot p ulse dm p pw t d = pw t ch - c(t) = s (t) ? ch - c ch - c = 4.17?c/ w, tc = 25?c
HAT2137H rev.2, dec. 2002, page 9 of 10 package dimensions 0.25 m 1.3 max 1.0 3.95 1.1 max 4.9 5.3 max 4.0 ?0.2 14 5 4.2 3.3 0? ?8? 0.07 +0.03 ?.04 *0.20 +0.05 ?.03 0.6 +0.25 ?.20 0.25 +0.05 ?.03 6.1 +0.1 ?.3 1.27 *0.40 ?0.06 0.75 max 0.10 hitachi code jedec jeita mass (reference value) lfpak 0.080 g as of july, 2002 unit: mm *ni/pd/au plating
HAT2137H rev.2, dec. 2002, page 10 of 10 disclaimer 1. hitachi neither warrants nor grants licenses of any rights of hitachi?s or any third party?s patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party?s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifi cations before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi?s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunc tion may directly threaten human life or cause risk of bodily injury, such as aerosp ace, aeronautics, nuclear power, co mbustion control, transportation, traffic, safety equipment or me dical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage rang e, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. ev en within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor de vices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to op eration of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi?s sales office fo r any questions regarding this document or hitachi semiconductor products. sales offices hitachi, ltd. semiconductor & integrated circuits nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2002. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00 singapore 049318 tel : <65>-6538-6533/6538-8577 fax : <65>-6538-6933/6538-3877 url : http://semiconductor.hitachi.com.sg url http://www.hitachisemiconductor.com/ hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road hung-kuo building taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://semiconductor.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower world finance centre, harbour city, canton road tsim sha tsui, kowloon hong kong tel : <852>-2735-9218 fax : <852>-2730-0281 url : http://semiconductor.hitachi.com.hk hitachi europe gmbh electronic components group dornacher str 3 d-85622 feldkirchen postfach 201, d-85619 feldkirchen germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi europe ltd. electronic components group whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 778322 hitachi semiconductor (america) inc. 179 east tasman drive san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 7.0
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