5.0v 1.0w rf power amplifier ic for 2.4 ghz ism ITT3301GJ advanced information advance information - specifications subject to change without notice 902434 --, april 1999 gaastek 5310 valley park drive roanoke, va 24019 usa www.gaastek.com tel: 1-540-563-3949 1-888-563-3949 (usa) fax: 1-540-563-8616 1 features single positive supply 45% power added efficiency 100% duty cycle 2000 to 2900 mhz operation 8 pin msop full downset plastic package operates over wide ranges of supply voltage self-aligned msag ? -lite mesfet process description maximum ratings (t a = 25 c unless otherwise noted) rating symbol value unit dc supply voltage v dd 6.5 vdc rf input power p in 10 mw junction temperature t j 150 c storage temperature range t stg -40 to +150 c the ITT3301GJ is an rf power amplifier based on gaastek?s self-aligned msag a mesfet process. this product is designed for use in 2.4 ghz ism products. electrical characteristics v dd = 5.0 v, p in = +5 dbm, duty cycle = 100 %, t a =25 c, output externally matched to 50 w characteristic symbol min typ max unit frequency range ? 2400 2500 mhz output power, f = 2450 mhz p out 29.5 dbm power added efficiency, f = 2450 mhz h 45 % harmonics 2?, 3?, 4 ? ? -30 dbc input vswr ? ? 2.0:1 ? off isolation (v dd =0 v) ? 40 db thermal resistance, junction to case r th 25 c/w load mismatch (v dd = 5.5 v, vswr = 8:1, p in = 0 dbm) ? no degradation in power output stability (p i n = 0 to +10 dbm, v dd = 0-5.5 v, load vswr = 5:1, fixed phases) ? all non-harmonically related outputs more than 60 db below desired signal
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