? semiconductor components industries, llc, 2005 august, 2005 ? rev. 3 1 publication order number: ntmd6n02r2/d ntmd6n02r2 power mosfet 6.0 amps, 20 volts n?channel enhancement mode dual so?8 package features ? ultra low r ds(on) ? higher efficiency extending battery life ? logic level gate drive ? miniature dual soic?8 surface mount package ? diode exhibits high speed, soft recovery ? avalanche energy specified ? soic?8 mounting information provided ? pb?free package is available applications ? dc?dc converters ? low voltage motor control ? power management in portable and battery?powered products, for example, computers, printers, cellular and cordless telephones and pcmcia cards maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain?to?source voltage v dss 20 v drain?to?gate voltage (r gs = 1.0 m ) v dgr 20 v gate?to?source voltage ? continuous v gs 12 v thermal resistance, junction?to?ambient (note 1) total power dissipation @ t a = 25 c continuous drain current @ t a = 25 c continuous drain current @ t a = 70 c pulsed drain current (note 4) r ja p d i d i d i dm 62.5 2.0 6.5 5.5 50 c/w w a a a thermal resistance, junction?to?ambient (note 2) total power dissipation @ t a = 25 c continuous drain current @ t a = 25 c continuous drain current @ t a = 70 c pulsed drain current (note 4) r ja p d i d i d i dm 102 1.22 5.07 4.07 40 c/w w a a a thermal resistance junction?to?ambient (note 3) total power dissipation @ t a = 25 c continuous drain current @ t a = 25 c continuous drain current @ t a = 70 c pulsed drain current (note 4) r ja p d i d i d i dm 172 0.73 3.92 3.14 30 c/w w a a a 1. mounted onto a 2 in square fr?4 board (1 in sq. 2 oz. cu 0.06 in thick single sided), t < 10 seconds. 2. mounted onto a 2 in square fr?4 board (1 in sq. 2 oz. cu 0.06 in thick single sided), t = steady state. 3. minimum fr?4 or g?10 pcb, t = steady state. 4. pulse test: pulse width = 10 s, duty cycle = 2%. device package shipping ? ordering information ntmd6n02r2 soic?8 2500/tape & reel n?channel d s g marking diagram & pin assignment source 1 gate 1 source 2 gate 2 drain 1 drain 1 drain 2 drain 2 (top view) 2 3 4 1 7 6 5 8 http://onsemi.com v dss r ds(on) typ i d max 20 v 35 m @ v gs = 4.5 v 6.0 a soic?8 case 751 style 11 1 8 ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. NTMD6N02R2G soic?8 (pb?free) 2500/tape & reel e6n02 alyw e6n02 = specific device code a = assembly location y = year ww = work week = pb?free package (note: microdot may be in either location )
ntmd6n02r2 http://onsemi.com 2 maximum ratings (t j = 25 c unless otherwise noted) (continued) rating symbol value unit operating and storage temperature range t j , t stg ?55 to +150 c single pulse drain?to?source avalanche energy ? starting t j = 25 c (v dd = 20 vdc, v gs = 5.0 vdc, peak i l = 6.0 apk, l = 20 mh, r g = 25 ) e as 360 mj maximum lead temperature for soldering purposes for 10 seconds t l 260 c electrical characteristics (t c = 25 c unless otherwise noted) (note 5) characteristic symbol min typ max unit off characteristics drain?to?source breakdown voltage (v gs = 0 vdc, i d = 250 adc) temperature coefficient (positive) v (br)dss 20 ? ? 19.2 ? ? vdc mv/ c zero gate voltage drain current (v ds = 20 vdc, v gs = 0 vdc, t j = 25 c) (v ds = 20 vdc, v gs = 0 vdc, t j = 125 c) i dss ? ? ? ? 1.0 10 adc gate?body leakage current (v gs = +12 vdc, v ds = 0 vdc) i gss ? ? 100 nadc gate?body leakage current (v gs = ?12 vdc, v ds = 0 vdc) i gss ? ? ?100 nadc on characteristics gate threshold voltage (v ds = v gs , i d = ?250 adc) temperature coefficient (negative) v gs(th) 0.6 ? 0.9 ?3.0 1.2 ? vdc mv/ c static drain?to?source on?state resistance (v gs = 4.5 vdc, i d = 6.0 adc) (v gs = 4.5 vdc, i d = 4.0 adc) (v gs = 2.7 vdc, i d = 2.0 adc) (v gs = 2.5 vdc, i d = 3.0 adc) r ds(on) ? ? ? ? 0.028 0.028 0.033 0.035 0.035 0.043 0.048 0.049 forward transconductance (v ds = 12 vdc, i d = 3.0 adc) g fs ? 10 ? mhos dynamic characteristics input capacitance (v ds = 16 vdc, v gs = 0 vdc, f = 1.0 mhz) c iss ? 785 1100 pf output capacitance c oss ? 260 450 reverse transfer capacitance c rss ? 75 180 switching characteristics (notes 6 and 7) turn?on delay time (v dd = 16 vdc, i d = 6.0 adc, v gs = 4.5 vdc, r g = 6.0 ) t d(on) ? 12 20 ns rise time t r ? 50 90 turn?off delay time t d(off) ? 45 75 fall time t f ? 80 130 turn?on delay time (v dd = 16 vdc, i d = 4.0 adc, v gs = 4.5 vdc, r g = 6.0 ) t d(on) ? 11 18 ns rise time t r ? 35 65 turn?off delay time t d(off) ? 45 75 fall time t f ? 60 110 total gate charge (v ds = 16 vdc, v gs = 4.5 vdc, i d = 6.0 adc) q tot ? 12 20 nc gate?source charge q gs ? 1.5 ? gate?drain charge q gd ? 4.0 ? 5. handling precautions to protect against electrostatic discharge is mandatory 6. indicates pulse test: pulse width = 300 s max, duty cycle = 2%. 7. switching characteristics are independent of operating junction temperature.
ntmd6n02r2 http://onsemi.com 3 electrical characteristics (t c = 25 c unless otherwise noted) (continued) (note 8) characteristic symbol min typ max unit body?drain diode ratings (note 9) diode forward on?voltage (i s = 4.0 adc, v gs = 0 vdc) (i s = 6.0 adc, v gs = 0 vdc) (i s = 6.0 adc, v gs = 0 vdc, t j = 125 c) v sd ? ? ? 0.83 0.88 0.75 1.1 1.2 ? vdc reverse recovery time (i s = 6.0 adc, v gs = 0 vdc, di s /dt = 100 a/ s) t rr ? 30 ? ns t a ? 15 ? t b ? 15 ? reverse recovery stored charge q rr ? 0.02 ? c 8. handling precautions to protect against electrostatic discharge is mandatory. 9. indicates pulse test: pulse width = 300 s max, duty cycle = 2%. 2.5 v figure 1. on?region characteristics v ds , drain?to?source voltage (volts) 12 8 6 2 1.75 1.5 1.25 1 0.75 0.5 0.25 0 i d , drain current (amps) figure 2. transfer characteristics v gs , gate?to?source voltage (volts) 2. 5 2 1.5 1 0.5 12 8 6 4 2 0 0 figure 3. on?resistance versus gate?to?source voltage v gs , gate?to?source voltage (volts) 0.07 0.03 0.02 0.01 10 8 6 4 2 0 figure 4. on-resistance versus drain current and gate voltage i d , drain current (amps) 7 5 3 1 0.03 0.02 r ds(on) , drain?to?source resistance (ohms) 0.01 0 0.05 i d , drain current (amps) v ds 10 v t j = ?55 c 25 c 100 c i d = 6.0 a t j = 25 c t j = 25 c v gs = 2.5 v 4.5 v t j = 25 c 1.8 v 2.0 v v gs = 1.5 v 10 v 4 10 4.5 v 3.2 v 0.04 11 91 3 0.04 10 0.05 0.06 r ds(on) , drain?to?source resistance (ohms)
ntmd6n02r2 http://onsemi.com 4 figure 5. on?resistance variation with temperature t j , junction temperature ( c) 1.6 1.4 1.2 1 0.8 150 125 100 75 50 25 0 ?25 ?50 figure 6. drain?to?source leakage current versus voltage v ds , drain?to?source voltage (volts) 2 0 16 12 8 4 100 10 i dss , leakage (na) 0.01 0.6 1000 r ds(on) , drain?to?source resistance i d = 6.0 a v gs = 4.5 v t j = 125 c v gs = 0 v 100 c 1 0.1 25 c (normalized) r g , gate resistance (ohms) 1 10 100 100 10 t, time (ns) v ds = 16 v i d = 6.0 a v gs = 4.5 v t r t d(on) 20 v gs , gate?to?source voltage (volt s) 4 0 0 1 0 q g , total gate charge (nc) v ds , drain?to?source voltage (volts ) 5 48 16 i d = 6 a v ds = 16 v v gs = 4.5 v t j = 25 c 12 v ds v gs q2 q1 1000 t f 3 2 8 12 416 qt t d(off) gate?to?source or drain?to?source voltage (volts) c, capacitance (pf) 1000 figure 7. capacitance variation 10 0 5 10 5 t j = 25 c c iss c oss c rss 15 20 0 2000 c iss c rss v ds = 0 v v gs = 0 v v ds v gs 500 1500 2500 figure 8. gate?to?source and drain?to?source voltage versus total charge figure 9. resistive switching time variation versus gate resistance
ntmd6n02r2 http://onsemi.com 5 drain?to?source diode characteristics 0 0.2 0.4 0.6 0 1 2 v sd , source?to?drain voltage (volts) figure 10. diode forward voltage versus current i s , source current (amps) 5 v gs = 0 v t j = 25 c 3 1.2 4 figure 11. maximum rated forward biased safe operating area 0.1 v ds , drain?to?source voltage (volts) 0.1 1 i d , drain current (amps) r ds(on) limit thermal limit package limit v gs = 20 v single pulse t c = 25 c 10 dc 1 100 10 0 10 10 ms 1 ms 0.8 1.0 100 s figure 12. diode reverse recovery waveform di/dt t rr t a t p i s 0.25 i s time i s t b typical electrical characteristics figure 13. thermal response t, time (s) rthja(t), effective transient thermal resistance 1 0.1 0.01 d = 0.5 single pulse 1.0e?05 1.0e?04 1.0e?03 1.0e?02 1.0e?01 1.0e+00 1.0e+01 0.2 0.05 0.01 1.0e+02 1.0e+03 0.001 0.1 0.02 r jc (t) = r(t) r jc d curves apply for power pulse train shown read time at t 1 t j(pk) ? t c = p (pk) r jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2
ntmd6n02r2 http://onsemi.com 6 package dimensions style 11: pin 1. source 1 2. gate 1 3. source 2 4. gate 2 5. drain 2 6. drain 2 7. drain 1 8. drain 1 soic?8 case 751?07 issue ag seating plane 1 4 5 8 n j x 45 k notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimension a and b do not include mold protrusion. 4. maximum mold protrusion 0.15 (0.006) per side. 5. dimension d does not include dambar protrusion. allowable dambar protrusion shall be 0.127 (0.005) total in excess of the d dimension at maximum material condition. 6. 751?01 thru 751?06 are obsolete. new standard is 751?07. a b s d h c 0.10 (0.004) dim a min max min max inches 4.80 5.00 0.189 0.197 millimeters b 3.80 4.00 0.150 0.157 c 1.35 1.75 0.053 0.069 d 0.33 0.51 0.013 0.020 g 1.27 bsc 0.050 bsc h 0.10 0.25 0.004 0.010 j 0.19 0.25 0.007 0.010 k 0.40 1.27 0.016 0.050 m 0 8 0 8 n 0.25 0.50 0.010 0.020 s 5.80 6.20 0.228 0.244 ?x? ?y? g m y m 0.25 (0.010) ?z? y m 0.25 (0.010) z s x s m 1.52 0.060 7.0 0.275 0.6 0.024 1.270 0.050 4.0 0.155 mm inches scale 6:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 ntmd6n02r2/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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