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| 1. product profile 1.1 general description n-channel enhancement mode field-effect transistor (fet) in a sot23 (to-236ab) small surface-mounted device (smd) plasti c package using trench mosfet technology. 1.2 features and benefits ? very fast switching ? low threshold voltage ? trench mosfet technology 1.3 applications ? battery-powered motor control ? high-speed switching in set top box power supplies 1.4 quick reference data PMV31XN n-channel trenchmos fet rev. 2 ? 30 november 2011 product data sheet table 1. quick reference data symbol parameter conditions min typ max unit v ds drain-source voltage t j 25 c; t j 150c --20v i d drain current t sp =25c; v gs = 4.5 v; see figure 2 ; see figure 3 --5.9a p tot total power dissipation t sp =25c; see figure 1 --2w static characteristics r dson drain-source on-state resistance v gs =2.5v; i d =1a; t j = 25 c; see figure 9 ; see figure 10 - 4453m ? v gs =4.5v; i d = 1.5 a; t j = 25 c; see figure 9 ; see figure 10 - 3137m ? product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com
PMV31XN n-channel trenchmos fet 2. pinning information 3. ordering information 4. marking [1] % = placeholder for manufacturing site code 5. limiting values table 2. pinning information pin symbol description simplified outline graphic symbol 1 g gate sot23 (to-236ab) 2ssource 3 d drain 12 3 s d g 017aaa253 table 3. ordering information type number package name description version PMV31XN to-236ab plastic surface-mounted package; 3 leads sot23 table 4. marking codes type number marking code [1] PMV31XN %m4 table 5. limiting values in accordance with the absolute maxi mum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage t j 25 c; t j 150 c - 20 v v dgr drain-gate voltage t j 25 c; t j 150 c; r gs =20k ? -20v v gs gate-source voltage -12 12 v i d drain current t sp = 100 c; v gs =4.5v; see figure 2 -3.75a t sp =25c; v gs = 4.5 v; see figure 2 ; see figure 3 -5.9a i dm peak drain current t sp = 25 c; pulsed; t p 10 s; see figure 3 - 23.7 a p tot total power dissipation t sp =25c; see figure 1 -2w t stg storage temperature -55 150 c t j junction temperature -55 150 c source-drain diode i s source current t sp =25c - 1.7 a product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com table 6. characteristics PMV31XN n-channel trenchmos fet 6. characteristics symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d =250a; v gs =0v; t j = -55 c 18 - - v i d =250a; v gs =0v; t j =25c 20--v v gs(th) gate-source threshold voltage i d =1ma; v ds =v gs ; t j =-55c; see figure 8 --1.8v i d =1ma; v ds =v gs ; t j = 150 c; see figure 8 0.35 - - v i d =1ma; v ds =v gs ; t j =25c; see figure 8 0.5 - 1.5 v i dss drain leakage current v ds =20v; v gs =0v; t j = 150 c - - 100 a v ds =20v; v gs =0v; t j =25c --1a i gss gate leakage current v gs =12v; v ds =0v; t j = 25 c - 10 100 na v gs =-12v; v ds =0v; t j = 25 c - 10 100 na r dson drain-source on-state resistance v gs =2.5v; i d =1a; t j = 25 c; see figure 9 ; see figure 10 - 4453m ? v gs =4.5v; i d = 1.5 a; t j = 25 c; see figure 9 ; see figure 10 - 3137m ? dynamic characteristics q g(tot) total gate charge i d =6a; v ds =10v; v gs =4.5v; t j =25c; see figure 11 -5.8-nc q gs gate-source charge - 1.4 - nc q gd gate-drain charge - 1.7 - nc c iss input capacitance v ds =20v; v gs = 0 v; f = 1 mhz; t j =25c; see figure 12 - 410 - pf c oss output capacitance - 115 - pf c rss reverse transfer capacitance -80-pf t d(on) turn-on delay time v ds =10v; r l =10 ? ; v gs =4.5v; r g(ext) =6 ? ; t j =25c -10-ns t r rise time - 15 - ns t d(off) turn-off delay time - 25 - ns t f fall time - 12 - ns source-drain diode v sd source-drain voltage i s = 1.5 a; v gs =0v; t j =25c; see figure 13 - 0.75 1.2 v product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com |
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