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1/11 june 2004 vn16bsp iso high side smart po wer solid state relay rev. 2 table 1. general features maximum continuous output current: 20 a @ t c = 85c 5v logic level compatible input thermal shut-down under voltage protection open drain diagnostic output inductive load fast demagnetization very low stand-by power dissipation description the vn16bps is a monolithic device made using stmicroelectronics vipower technology, intended for driving resistive or inductive loads with one side grounded. built-in thermal shut-down protects the chip from over temperature and short circuit. the open drain diagnostic output indicates: open load in off state and in on state, output shorted to v cc and overtemperature. fast demagnetization of inductive loads is achieved by negative (-18v) load voltage at turn-off. figure 1. package table 2. order codes type v dss r ds(on) i out v cc vn16bps 40 v 0.06 ? 5.6 a 26 v 1 10 powerso-10 package tube tape and reel powerso-10 vn16bsp vn16bsp13tr
vn16bsp 2/11 figure 2. block diagram table 3. absolute maximum ratings symbol parameter value unit v (br)dss drain-source breakdown voltage 40 v i out output current (cont.) at t c = 85 c 20 a i out (rms) rms output current at t c = 85 c 20 a i r reverse output current at t c = 85 c (f > 1hz) ?20 a i in input current 10 ma ? v cc reverse supply voltage ?4 v i stat status current 10 ma v esd electrostatic discharge (1.5 k ? , 100 pf) 2000 v p tot power dissipation at t c = 25 c 82 w t j junction operating temperature -40 to 150 c t stg storage temperature -55 to 150 c
3/11 vn16bsp figure 3. connection diagrams figure 4. current and voltage conventions table 4. thermal data note: 1. when mounted using minimum recommended pad size on fr-4 board. symbol parameter value unit r thj-case thermal resistance junction-case max 1.5 c/w r thj-amb thermal resistance junction-ambient (1) max 50 c/w
vn16bsp 4/11 electrical characteristics (8 < v cc < 16 v; -40 t j 125 c unless otherwise specified) table 5. power note: 2. in= nominal current according to iso definition for high side automotive switch. the nominal current is the current at t c = 85 c for battery voltage of 13v which produces a voltage drop of 0.5 v. table 6. switching note: 3. see switching time waveforms. table 7. logic input note: 4. the v ih is internally clamped at 6v about. it is possible to connect this pin to an higher voltage via an external resistor calculated to not exceed 10 ma at the input pin. symbol parameter test conditions min. typ. max. unit v cc supply voltage 6 13 26 v i n (2) nominal current t c = 85 c; v ds(on) 0.5; v cc = 13 v 5.6 8.8 a r on on state resistance i out = in; v cc = 13 v; t j = 25 c 0.038 0.06 ? i s supply current off state; v cc = 13 v; t j 25 c 25 50 a v ds(max) maximum voltage drop i out = 20 a; v cc = 13 v; t c = 85 c 1 1.8 v r j output to gnd internal impedance t j = 25 c 5 10 20 k ? symbol parameter test conditions min. typ. max. unit t d(on) (3) turn-on delay time of output current r load = 1.6 ? 5 50 500 s t r (3) rise time of output current r load = 1.6 ? 40 100 680 s t d(off) (3) turn-off delay time of output current r load = 1.6 ? 10 100 500 s t f (3) fall time of output current r load = 1.6 ? 40 100 680 s (di/dt) on turn-on current slope r load = 1.6 ?; v cc = 13 v 0.008 0.1 a/s (di/dt) off turn-off current slope r load = 1.6 ?; v cc = 13 v 0.008 0.1 a/s v demag inductive load clamp voltage r load = 1.6 ?; l = 1 mh ?24 ?18 ?14 v symbol parameter test conditions min. typ. max. unit v il input low level voltage 1.5 v v ih input high level voltage 3.5 note 4 v v i(hyst) input hysteresis voltage 0.2 1 1.5 v i in input current v in = 5 v; t j = 25 c 100 a v icl input clamp voltage i in = 10 ma i in = ?10 ma 56 ?0.7 7v v
5/11 vn16bsp electrical characteristics (cont?d) table 8. protection and diagnostics (cont?d) note: 5. i ol(off) = (v cc -v ol )/r ol (see figure 5). 6. t povl t pol : iso definition (see figure 6). figure 5. note 5 relevant figure figure 6. note 6 relevant figure symbol parameter test conditions min. typ. max. unit v stat status voltage output low i stat = 1.6 ma 0.4 v v usd under voltage shut down 3.5 5 6 v v scl status clamp voltage i stat = 10 ma i stat = ?10 ma 56 ?0.7 7v v t tsd thermal shut-down temperature 140 160 180 c t sd(hyst.) thermal shut-down hysteresis 15 50 c t r reset temperature 125 c v ol (5) open voltage level off-state 2.5 3.8 5 v i ol open load current level on-state 0.15 0.85 a t povl (6) status delay 5 10 s t pol (6) status delay 50 400 2500 s
vn16bsp 6/11 figure 7. switching time waveforms functional description the device has a diagnostic output which indicates open load in on-state, open load in off- state, over temperature conditions and stuck-on to v cc . from the falling edge of t he input signal, the status output, initially low to signal a fault condition (overtemperature or open load on-state), will go back to a high state with a different delay in case of overtemperature (tpovl) and in case of open load (tpol) respectively . this feature allows to discriminate the nature of the detected fault. to protect the device agains t short circuit and over current condition, the thermal protection turns the integrated power mos off at a minimum junction temperature of 140 c. when this temperature returns to 125c the switch is automatically turned on again. in short circuit the protection reacts with virtually no delay, the sensor being located inside the power mos area. an internal function of the devices ensures the fast demagnetization of inductive loads with a typical voltage (v demag ) of - 18v. this function allows to greatly reduces the power dissipation according to the formula: p dem = 0.5 l load (i load ) 2 [(v cc +v demag )/ v demag ] f where f = switching frequency and v demag = demagnetization voltage the maximum inductance which causes the chip temperature to reach the shut-down temperature in a specified thermal environment is a function of the load current for a fixed v cc , v demag and f according to the above formula. in this device if the gnd pin is disconnected, with v cc not exceeding 16v, it will switch off. protecting the device against reverse battery the simplest way to protect the device against a continuous reverse battery voltage (-26v) is to insert a schottky diode between pin 1 (gnd) and ground, as shown in the typical application circuit (figure 10). the consequences of the voltage drop across this diode are as follows: ? if the input is pulled to power gnd, a negative voltage of -v f is seen by the device. (v il , v ih thresholds and v stat are increased by v f with respect to power gnd). ? the undervoltage shutdown level is increa- sed by v f . if there is no need for the control unit to handle external analog signals referred to the power gnd, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit in figure 10), which becomes the common signal gnd for the whole control board avoiding shift of v ih , v il and v stat . this solution allows the use of a standard diode.
7/11 vn16bsp table 9. truth table note: 7. with an additional external resistor. figure 8. waveforms input output diagnostic normal operation l h l h h h over-temperature x l l under-voltage x l h short load to v cc h l h h l l open circuit h l h l l l (7)
vn16bsp 8/11 figure 9. over current test circuit figure 10. typical application circuit with a schottky diode for reverse supply protection figure 11. typical application circ uit with separate signal ground
9/11 vn16bsp package mechanical table 10. power so-10 mechanical data note: 8. muar only poa p013p . figure 12. power so-10 package dimensions note: drawing is not to scale. symbol millimeters min typ max a3.35 3.65 a (8) 3.4 3.6 a1 0.00 0.10 b0.40 0.60 b (8) 0.37 0.53 c0.35 0.55 c (8) 0.23 0.32 d9.40 9.60 d1 7.40 7.60 e9.30 9.50 e2 7.20 7.60 e2 (8) 7.30 7.50 e4 5.90 6.10 e4 (8) 5.90 6.30 e1.27 f1.25 1.35 f (8) 1.20 1.40 h 13.80 14.40 h (8) 13.85 14.35 h0.50 l1.20 1.80 f (8) 0.80 1.10 a 0o 8o (8) 2o 8o detail "a" plane seating l a1 f a1 h a d d1 = = = = e4 0.10 a c a b b detail "a" seating plane e2 10 1 eb he 0.25 p095a
vn16bsp 10/11 revision history table 11. revision history date revision description of changes march-1998 1 first issue 18-june-2004 2 stylesheet update. no content change.
11/11 vn16bsp information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states www.st.com

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