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| www.irf.com 1 automotive grade features advanced planar technology low on-resistance dual n and p channel mosfet dynamic dv/dt rating 150c operating temperature fast switching full avalanche rated repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified* description specifically designed for automotive applications, this cellular design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. this benefit com- bined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. so-8 AUIRF9952Q absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ n-ch p-ch v (br)dss 30v -30v r ds(on) max. 0.10 0.25 i d 3.5a -2.3a d1 n-channel mosfet p-channel mosfet d1 d 2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 parameter units n-channel p-channel i d @ t a = 25c 10 sec. pulsed drain current, v gs @ 10v 3.5 -2.3 i d @ t a = 70c continuous drain current, v gs @ 10v 2.8 -1.8 i dm pulsed drain current 16 -10 p d @t a = 25c power dissipation p d @t a = 70c power dissipation linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy 44 57 mj i ar avalanche current 2.0 -1.3 a e ar repetitive avalanche energy mj dv/dt peak diode recovery dv/dt 5.0 -5.0 v/ns t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient (pcb mount, steady state) ??? 62.5 c/w w a c -55 to + 150 1.3 0.25 max. 2.0 0.016 20 www.irf.com 2 ! "# $ %& n-channel i sd '( ')(* * ( + ,- p-channel i sd . %'( /')(* * ( + ,- n-channel # + 0,-(102 0 (3 0 ' "# 4 & p-channel # + 0,-(10562 0 (3 0. %' 7 %) 8 #$ ! !4 .!( static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units n-ch 30 ??? ??? v p-ch -30 ??? ??? n-ch ??? 0.015 ??? v/c p-ch ??? 0.015 ??? ??? 0.08 0.10 ??? 0.12 0.15 ??? 0.165 0.250 ??? 0.290 0.400 n-ch 1.0 ??? 3.0 v p-ch -1.0 ??? -3.0 n-ch ??? 12 ??? s p-ch ??? 2.4 ??? n-ch ??? ??? 2.0 p-ch ??? ??? -2.0 n-ch ??? ??? 25 p-ch ??? ??? -25 i gss gate-to-source forward leakage n-p ??? ??? -100 gate-to-source reverse leakage n-p ??? ??? 100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units n-ch ??? 6.9 14 p-ch ??? 6.1 12 n-ch ??? 1.0 2.0 p-ch ??? 1.7 3.4 n-ch ??? 1.8 3.5 n-ch ??? 1.1 2.2 p-ch ??? 6.2 12 n-ch ??? 9.7 19 p-ch ??? 8.8 18 n-ch ??? 14 28 n-ch ??? 13 26 p-ch ??? 20 40 n-ch ??? 3.0 6.0 p-ch ??? 6.9 14 n-ch ??? 190 ??? p-ch ??? 190 ??? v gs = 0v, v ds = 15v, ? = 1.0mhz n-ch ??? 120 ??? p-ch ??? 110 ??? n-ch ??? 61 ??? v gs = 0v, v ds = -15v, ? = 1.0mhz p-ch???54??? diode characteristics parameter min. typ. max. units n-ch ??? 0.82 1.2 v p-ch ??? -0.82 -1.2 n-ch ??? 27 53 ns n-channel p-ch ??? 27 54 t j = 25c,i f =1.25a, di/dt = 100a/ s n-ch ??? 28 57 nc p-channel p-ch ??? 31 62 t j = 25c,i f =-1.25a, di/dt = 100a/ s t on forward turn-on time n-p intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) input capacitance c oss output capacitance i d = 1.8a, v ds = 10v, v gs = 10v p-channel v dd = 10v, i d = 1.0a r g = 6.0 a v ds = -15v, i d = -2.3a v ds = -24v, v gs = 0v v ds = -24v, v gs = 0v, t j = 125c i dss drain-to-source leakage current q g total gate charge v gs(th) gate threshold voltage forward transconductance gfs v ds = v gs , i d = 250 a v (br)dss drain-to-source breakdown voltage v (br)dss / t j breakdown voltage temp. coefficient r ds(on) static drain-to-source on-resistance v gs = 0v, i d =-250 a reference to 25c, i d = -1ma n-ch conditions v ds = 15v, i d = 3.5a n-channel v gs = 20v v gs = -10v, i d = -1.0a p-ch v gs = 4.5v, i d = 1.0a v gs = -4.5v, i d = -0.5a conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 2.2a t j = 25c, i s = 1.25a, v gs = 0v conditions a v ds = 24v, v gs = 0v v ds = 24v, v gs = 0v, t j = 125c v gs = -20v ??? ??? 1.7 na a pf ns nc i s continuous source current (body diode) r d = 10 p-ch n-ch 16 t j = 25c, i s = -1.25a, v gs = 0v t rr reverse recovery time q rr reverse recovery charge www.irf.com 3 !! ""#! $ % &$' ()(* # * " + , ,- ," qualification information ? so-8 msl1 rohs compliant yes esd machine model class q1(n) = m1a (+/- 50v) ??? , q2(p) = m1a (+/- 50v) ??? aec-q101-002 human body model class q1(n) = h0 (+/- 150v) ??? , q2(p) = h0 (+/- 150v) ??? aec-q101-001 charged device model class q1(n) = c4 (+/- 1000v) ??? , q2(p) = c4 (+/- 1000v) ??? aec-q101-005 moisture sensitivity level qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. www.irf.com 4 ./ . ' ./ 0 ' ./ 0 ' ./ 1 2 3 , 1 10 100 0.1 1 10 20 s pulse width t = 25c a j ds v , drain-to-source voltage (v) 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v d i , drain-to-source current (a) 1 10 100 0.1 1 10 a ds v , drain-to-source voltage (v) d i , drain-to-source current (a) 20 s pulse width t = 150c j 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 t = 25c t = 150c j j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a 1 10 100 3.0 3.5 4.0 4.5 5.0 5.5 6.0 t = 25c t = 150c j j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) a v = 10v 20 s pulse width ds www.irf.com 5 4# 50 3".# 6 %# #&- $,/ 3" ' ./ 0 3" ' ./ 0 3"7 3 , -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 2.2a 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 03691215 a i = 3.5a d gs v , gate-to-source voltage (v) "!&(9 . !.#! : " & 0 20 40 60 80 100 25 50 75 100 125 150 j e , single pulse avalanche energy (mj) as a starting t , junction temperature (c) i top 0.89a 1.6a bottom 2.0a d 0.04 0.06 0.08 0.10 0.12 0 2 4 6 8 10 12 a i , drain current (a) d v = 10v gs v = 4.5v gs "!&(9 . !.#! : " & www.irf.com 6 6 %# #$-. . # # 89 &# ./ 7 ' ,3" 7 1 3 , ./ ' 3" 1 3 , 0 50 100 150 200 250 300 350 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 2 4 6 8 10 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 1.8a v = 10v ds 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 0.50 single pulse (thermal response) www.irf.com 7 ./ . ' ./ 0 ' ./ 0 ' ./ 1 2 3 , 0.1 1 10 100 0.1 1 10 d ds 20 s pulse width t = 25c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) j -3.0v vgs top - 15v - 10v - 7.0v - 5.5v - 4.5v - 4.0v - 3.5v bottom - 3.0v 0.1 1 10 100 0.1 1 10 d ds a -i , drain-to-source current (a) -v , drain-to-source voltage (v) -3.0v vgs top - 15v - 10v - 7.0v - 5.5v - 4.5v - 4.0v - 3.5v bottom - 3.0v 20 s pulse width t = 150c j 0.1 1 10 100 3.0 4.0 5.0 6.0 7.0 8.0 t = 25c t = 150c j j gs d a -i , drain-to-source current (a) -v , gate-to-source voltage (v) v = -10v 20 s pulse width ds 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 t = 25c t = 150c j j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v) www.irf.com 8 4# 50 3".# 6 %# #&- $,/ 3" ' ./ 0 3" ' ./ 0 3"7 3 , -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -1.0a 0.0 0.5 1.0 1.5 2.0 2.5 0.0 1.0 2.0 3.0 4.0 5.0 a -i , drain current (a) d v = -10v v = -4.5v gs gs 0.00 0.20 0.40 0.60 0.80 0 3 6 9 12 15 a gs i = -2.3a d -v , gate-to-source voltage (v) (9 . !.#! : " & (9 . !.#! : " & 25 50 75 100 125 150 0 30 60 90 120 150 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -0.58a -1.0a -1.3a www.irf.com 9 ./ 7 ' ,3" 7 1 3 , ./ ' 3" 1 3 , 0 100 200 300 400 1 10 100 c, capacitance (pf) a ds -v , drain-to-source voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 2 4 6 8 10 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -2.3a v = -10v ds 6 %# #$-. . # # 89 &# 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 0.50 single pulse (thermal response) www.irf.com 10 ! so-8 package outline dimensions are shown in millimeters (inches) so-8 part marking ! " ! # $$ ! %& % % !% ! ' www.irf.com 11 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in millimeters (inches) www.irf.com 12 ordering information base part number package type standard pack complete part number form quantity AUIRF9952Q so-8 tube 95 AUIRF9952Q tape and reel 4000 AUIRF9952Qtr www.irf.com 13 ! "#$ % & ' # ( ) ) * ' ' % +% ' * , ' ( % , ( -. , . % ( , / 0 1 # 01# -0 0 01# ' . 01# 2 ' . ) ' -/&*-34565' "#$ . 2 ' ! "# |
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