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?2008 silicon storage technology, inc. s71330-05-000 02/09 1 the sst logo and superflash are registered trademarks of silicon storage technology, inc. these specifications are subject to change without notice. preliminary specifications features: ?gain: ? typically 12 db gain across 2.4?2.5 ghz for receiver (rx) chain. ? typically 29 db gain across 2.4?2.5 ghz over tem- perature 0c to +80c for transmitter (tx) chain. ? low-noise figure ? typical 1.45 db across 2.4?2.55 ghz ?50 input/output matched along rx chain. ?iip3 ? 3 dbm 2.4?2.55 ghz ? high linear output power: ? >26.5 dbm p1db ? meets 802.11g ofdm acpr requirement up to 23 dbm ? ~3% added evm up to 19 dbm for 54 mbps 802.11g signal ? meets 802.11b acpr requirement up to 24 dbm ? high power-added efficiency/low operating current for both 802.11g/b applications ? ~22%/210 ma @ p out = 22 dbm for 802.11g ? ~26%/240 ma @ p out = 23.5 dbm for 802.11b ? low idle current ?~70 ma i cq ? low shut-down current (typical 2.5 a) ? built-in, ultra-low i ref power-up/down control ?i ref <4 ma ? high-speed power-up/down ? turn on/off time (10%- 90%) <100 ns ? typical power-up/down delay with driver delay included <200 ns ? high temperature stability ? ~1 db gain/power variation between 0c to +85c ? simple input/output matching ? single positive power supply ? packages available ? 24-contact wqfn ? 4mm x 4mm ? all non-pb (lead-free) devices are rohs compliant applications: ?wlan ? bluetooth ? wireless network product description the sst12lf01 is a 2.4 ghz front-end module (fem) that combines a high-performance low-noise amplifier (lna) and a power amplifier (pa). designed in compliance with ieee 802.11 b/g applications and based on gaas phemt/hbt technology, the sst12lf01 operates within the frequency range of 2.4? 2.55 ghz at a very low dc-current consumption. there are two components to the fem: the receiver (rx) chain and the transmitter (tx) chain. the rx chain consist of a co st effective low-noise ampli- fier (lna) cell which requires no external rf-matching components. this device is based on the 0.5m gaas phemt technology, and complies with 802.11 b/g applica- tions. the lna provides high-performance, low-noise, and mod- erate gain operation within the 2.4?2.55 ghz frequency band. across this frequency band, the lna typically pro- vides 12 db gain and 1.45 db noise figure. this lna cell is designed with a self dc-biasing scheme, which maintains low dc current consumption, nominally at 11 ma, during operation. optimum performance is achieved with only a single power supply and no external bias resistors or networks are required. the input and out- put ports are singled-ended 50 ohm matched. rf ports are also dc isolated requiring no dc blocking capacitors or matching components to reduce system board bill of mate- rials (bom) cost. the tx chain includes a high-efficiency pa based on ingap/gaas hbt technology. the pa typically provides 30 db gain with 22% power-added efficiency at p out = 22 dbm for 802.11g and 27% power-added efficiency at p out = 24 dbm for 802.11b. the transmitter chain has excellent linearity, typically <4% added evm up to 20 dbm output power, which is essential for 54 mbps 802.11g operation while meeting 802.11g spectrum mask at 23 dbm. the sst12lf01 is offered in 24-contact wqfn package. see figure 2 for pin assignments and table 1 for pin descriptions. 2.4 ghz front-end module sst12lf01 sst12lf012.4 ghz front-end module
preliminary specifications 2.4 ghz front-end module sst12lf01 ?2008 silicon storage technology, inc. s71330-05-000 02/09 2 functional blocks figure 1: functional block diagram 2 5 6 8 16 15 1 14 4 91112 10 13 3 7 17 1 8 19 20 21 22 23 24 1330 b1.0 l n a pa
preliminary specifications 2.4 ghz front-end module sst12lf01 3 ?2008 silicon storage technology, inc. s71330-05-000 02/09 pin assignments figure 2: pin assignments for 24-contact wqfn 2 5 6 8 16 15 1 14 4 91112 10 13 v ref nc v ccb nc nc v dd _rx 3 nc lna in nc 7 1330 p1.1 17 18 19 20 21 22 23 24 top view (contacts facing down) rf and dc gnd 0 pa out v cc _tx2 lna out pa in nc v cc _tx1 nc nc nc nc nc nc nc nc pa out
preliminary specifications 2.4 ghz front-end module sst12lf01 ?2008 silicon storage technology, inc. s71330-05-000 02/09 4 pin descriptions table 1: pin description symbol pin no. pin name type 1 1. i=input, o=output function lna in 1ilna rf input nc 2 no connection unconnected pin nc 3 no connection unconnected pin pa out 4opa rf output pa out 5opa rf output v cc _tx2 6 power supply pwr pa power supply, 2 nd stage nc 7 no connection unconnected pin nc 8 no connection unconnected pin v cc _tx1 9 power supply pwr pa power supply,1 st stage v ref 10 pwr pa-enable and current control v ccb 11 power supply pwr pa power supply, bias circuit nc 12 no connection unconnected pin nc 13 no connection unconnected pin pa in 14 i pa rf input nc 15 no connection unconnected pin nc 16 no connection unconnected pin nc 17 no connection unconnected pin lna out 18 o lna rf output nc 19 no connection unconnected pin nc 20 no connection unconnected pin nc 21 no connection unconnected pin v dd _rx 22 power supply pwr lna power supply nc 23 no connection unconnected pin nc 24 no connection unconnected pin t1.0 1330
preliminary specifications 2.4 ghz front-end module sst12lf01 5 ?2008 silicon storage technology, inc. s71330-05-000 02/09 electrical specifications the ac and dc specifications for the power amplifier interface signals. refer to table 2 for the dc voltage and current spec- ifications. refer to figures 3 through 14 for the rf performance. absolute maximum stress ratings (applied conditions greater than t hose listed under ?absolute maximum stress ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these conditions or conditions greater t han those defined in the operational sections of this data sheet is not implied. exposu re to absolute maximum stress rating co nditions may affect device reliability.) input power to pins 1 (lna) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 dbm input power to pins 14 (pa) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-5 dbm average output power pins 4 and 5 (p out ) 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 dbm 1. never measure with cw source. pulsed single-tone source with <50% duty cycle is recommended. exceeding the maximum rating of average output power could cause permanent damage to the device. average output power pin 18 (p out ) 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 dbm supply voltage at pins 6, 9, and 11 (v cc ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3v to +3.5v supply voltage at pin 22 (v dd ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3v to +4.6v reference voltage to pin 10 (v ref ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3v to +3.6v dc supply current to pin 10 (i dd ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 ma dc supply current to pin 6, 9, and 11 (i cc ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 ma operating temperature (t a ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oc to +85oc storage temperature (t stg ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oc to +120oc maximum junction temperature (t j ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150oc surface mount solder reflow temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260c for 10 seconds operating range range ambient temp v cc / v dd commercial -0 to 80oc 2.9?3.5v table 2: dc electrical characteristics symbol parameter min. typ max. unit v cc supply voltage at pins 6, 9, 11, and 22 3.3 4.2 v i cc supply current at pin 22 10 ma for 802.11g, 22 dbm at pins 6, 9, and 11 210 ma for 802.11b, 23.5 dbm at pins 6, 9, and 11 260 ma i cq idle current for 802.11g to meet evm<4% @ 20 dbm 75 ma i off shut down current 2.5 a v ref 1 1. vref and vreg are defined in figure 15. three combinations of resistor values and applied vo ltages of vreg are suggested in table 2. reference voltage at pin10 with r reg = 0 resistor 2.7 v reference voltage at pin 10 with r reg = 120 resistor 2.7 2.9 3.1 v reference voltage at pin 10 with r reg = 220 resistor 2.9 3.1 3.3 v t2.1 1330
preliminary specifications 2.4 ghz front-end module sst12lf01 ?2008 silicon storage technology, inc. s71330-05-000 02/09 6 table 3: ac electrical characteristics for rx chain symbol parameter min. typ max. unit f l-u frequency range 2400 2550 mhz g small signal gain 10 12 db nf noise figure 1.45 db iip3 2.4?2.55 ghz 3 dbm t3.1 1330 table 4: ac electrical characteristics for tx chain symbol parameter min. typ max. unit f l-u frequency range 2400 2485 mhz p out output power @ pin = -6 dbm 11b signals 23 dbm @ pin = -9 dbm 11g signals 20 dbm g small signal gain 28 29 33 db g var1 gain variation over band (2400~2485 mhz) 0.5 db g var2 gain ripple over channel (20 mhz) 0.2 db acpr meet 11b spectrum mask 23 dbm meet 11g ofdm 54 mbps spectrum mask 22 dbm added evm @ 20 dbm output with 11g ofdm 54 mbps signal 4 % 2f, 3f, 4f, 5f harmonics at 22 dbm, without external filters -40 dbc t4.1 1330
preliminary specifications 2.4 ghz front-end module sst12lf01 7 ?2008 silicon storage technology, inc. s71330-05-000 02/09 typical performan ce characteristics test conditions: v dd = 3.0v, t a = 25c, unless otherwise specified figure 3: s-parameters, rx chain frequency (ghz) frequency (ghz) s11 versus frequency s12 versus frequency s22 versus frequency s21 versus frequency 1330-sparm1.3 frequency (ghz) -40 -30 -20 -10 0 10 20 01234567 8 910 frequency (ghz) s11 (db) -60 -50 -40 -30 -20 -10 0 10 20 0246 8 10 s12 (db) 13579 s21 (db) -40 -35 -30 -25 -20 -15 -10 -5 0 0246 8 10 s22 (db) 13579 -50 -40 -30 -20 -10 0 10 20 01234567 8 910
preliminary specifications 2.4 ghz front-end module sst12lf01 ?2008 silicon storage technology, inc. s71330-05-000 02/09 8 figure 4: noise figure versus fre q uency, rx chain frequency (ghz) 1330 f 8 .1 0 0.5 1.0 1.5 2.0 2.5 3.0 1.5 2.0 2.5 3.0 frequency (ghz) noise fi g ure (db) temp = -10 de g ree temp = 25 de g ree temp = 8 0 de g ree
preliminary specifications 2.4 ghz front-end module sst12lf01 9 ?2008 silicon storage technology, inc. s71330-05-000 02/09 figure 5: fre q uency response of gain (s21) over three temperatures 1330 f12.1 -15 -10 -5 0 5 10 15 20 1234 fre que ncy (g hz ) gain (db) te m p = - 1 0 d e g r e e room temp te m p = 8 0 degree
preliminary specifications 2.4 ghz front-end module sst12lf01 ?2008 silicon storage technology, inc. s71330-05-000 02/09 10 figure 6: input ip3 versus fre q uency, rx chain 0 1 2 3 4 5 6 7 8 9 10 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2. 8 2.9 3 frequency (ghz) iip3 (dbm) vdd=3.3v vdd=3.0v vdd=3.6v 1330 f9.1
preliminary specifications 2.4 ghz front-end module sst12lf01 11 ?2008 silicon storage technology, inc. s71330-05-000 02/09 figure 7: input p1db versus fre q uency, rx chain 1330 f10.1 -10 -9 - 8 -7 -6 -5 -4 -3 -2 -1 0 2 2.2 2.4 2.6 2. 8 3 frequency (ghz) ip1db (dbm) vdd = 3.3 vdd = 3.0 vdd = 3.6
preliminary specifications 2.4 ghz front-end module sst12lf01 ?2008 silicon storage technology, inc. s71330-05-000 02/09 12 test conditions: v cc = 3.3v, t a = 25c, unless otherwise specified figure 8: s-parameters, tx chain -12.00 -10.00 - 8 .00 -6 .0 0 -4 .0 0 -2 .0 0 0.00 2.00 0.0 2.0 4.0 6.0 8 .0 10.0 12.0 fre que ncy (ghz ) s11 (db) -60.00 -50.00 -40.00 -30.00 -20.00 -10.00 0.00 10.00 20.00 30.00 40.00 0.0 2.0 4.0 6.0 8 .0 10.0 12.0 fre que ncy (ghz ) s21 (db) -100.00 -90.00 - 8 0.00 -70.00 -60.00 -50.00 -40.00 -30.00 -20.00 -10.00 0.00 0.0 2.0 4.0 6.0 8 .0 10.0 12.0 fre que ncy ( g hz ) s21 (db) -9.00 - 8 .00 -7.00 -6.00 -5.00 -4.00 -3.00 -2.00 -1.00 0.00 0.0 2.0 4.0 6.0 8 .0 10.0 12.0 fre que ncy ( g hz ) s22 (db) 1330 sparm2-1.1
preliminary specifications 2.4 ghz front-end module sst12lf01 13 ?2008 silicon storage technology, inc. s71330-05-000 02/09 typical performan ce characteristics test conditions: f = 2.447 ghz, v cc = 3.3v, v ref = 2.85v at room temperature i cq = 70 ma figure 9: supply current versus output power figure 10: power added efficiency (pae) versus output power 1330 f1.1 supply current versus output power 60 8 0 100 120 140 160 1 8 0 200 220 240 260 2 8 0 300 320 340 360 9 10 11 12 13 14 15 16 17 1 8 19 20 21 22 23 24 output power (dbm) supply current (ma) freq = 2.412 ghz freq = 2.447 ghz freq = 2.4 8 4 ghz 1330 f2.1 pae versus output power 0 2 4 6 8 10 12 14 16 1 8 20 22 24 26 2 8 30 9 10111213141516171 8 19 20 21 22 23 24 output power (dbm) pae (%) freq = 2.412 ghz freq = 2.447 ghz freq = 2.4 8 4 ghz
preliminary specifications 2.4 ghz front-end module sst12lf01 ?2008 silicon storage technology, inc. s71330-05-000 02/09 14 figure 11: evm versus output power figure 12: power gain versus output power evm versus output power 0 1 2 3 4 5 6 7 8 9 10 9 10111213141516171 8 19 20 21 22 23 24 output power (dbm) evm (%) freq=2.412 ghz freq=2.447 ghz freq=2.4 8 4 ghz 1330 f3.3 power gain versus output power 20 22 24 26 2 8 30 32 34 36 3 8 40 9 10111213141516171 8 19 20 21 22 23 24 output power (dbm) power gain (db) freq=2.412 ghz freq=2.447 ghz freq=2.4 8 4 ghz 1330 f11.0
preliminary specifications 2.4 ghz front-end module sst12lf01 15 ?2008 silicon storage technology, inc. s71330-05-000 02/09 test conditions: v cc = 3.3v, t a = 25c, 54 mbps 802 .11g ofdm signal figure 13: 802.11g spectrum mask at 23 dbm test conditions: v cc = 3.3v, t a = 25c, 1 mbps 802.11b signal figure 14: 802.11b spectrum mask at 23 dbm -70 -60 -50 -40 -30 -20 -10 0 10 2.35 2.40 2.45 2.50 2.55 frequency (ghz) amplitude (db) fre q = 2.412 ghz fre q = 2.442 ghz fre q = 2.4 8 4 ghz 1330 f4.0 1330 f5.0 - 8 0 -70 -60 -50 -40 -30 -20 -10 0 10 2.35 2.40 2.45 2.50 2.55 frequency (ghz) amplit u de (db) fre q = 2.412 ghz fre q = 2.442 ghz fre q = 2.4 8 4 ghz
preliminary specifications 2.4 ghz front-end module sst12lf01 ?2008 silicon storage technology, inc. s71330-05-000 02/09 16 figure 15: typical schematic 2 5 6 8 16 15 1 14 4 91112 10 13 3 7 1330 schematic1.2 17 18 19 20 21 22 23 24 lna rf in pa r f out 50 / 146 mil 1.6 pf 0.1 f 50 / 113 mil 50 47 pf pa v cc pa r f in lna rf out lna v dd 0.82 pf 12 nh 1 f 0.1 f 0.1 f 50 v reg 0 0.1 f 100 pf 50 47 pf dc block dc block v ref i reg
preliminary specifications 2.4 ghz front-end module sst12lf01 17 ?2008 silicon storage technology, inc. s71330-05-000 02/09 product ordering information valid combinations for sst12lf01 sst12lf01-qde SST12LF01-QDF sst12lf01 evaluation kits sst12lf01-qde-k SST12LF01-QDF-k note: valid combinations are those products in mass producti on or will be in mass production. consult your sst sales representative to confirm availability of valid combinat ions and to determine availability of new combinations. sst12lf 01 - qd e sstxx l f xx -xx x environmental attribute e 1 = non-pb contact (lead) finish f 2 = non-pb/non-sn contact (lead) finish package modifier d = 24 contact package type q = wqfn product family identifier product type f = front end module voltag e l = 3.0-3.6v fre q uency of operation 2 = 2.4 ghz product line 1 = sst communications 1. environmental suffix ?e? denotes non-pb solder. sst non-pb solder devices are ?rohs compliant?. 2. environmental suffix ?f? denotes non-pb/non-sn solder. sst non-pb/non-sn solder devices are ?rohs compliant?.
preliminary specifications 2.4 ghz front-end module sst12lf01 ?2008 silicon storage technology, inc. s71330-05-000 02/09 18 packaging diagrams figure 16: 24-contact very-very-thin quad flat no-lead (wqfn) sst package code: qd note: 1. complies with jedec jep95 mo-220j, variant wggd-4 except external paddle dimensions. 2. from the bottom view, the pin #1 indicator may be either a 45-degree chamfer or a half-circle notch. 3. the external paddle is electrically connected to the die back-side and possibly to certain v ss leads. this paddle can be soldered to the pc board; it is suggested to connect this paddle to the v ss of the unit. connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 4. untoleranced dimensions are nominal target dimensions. 5. all linear dimensions are in millimeters (max/min). 24-wqfn-4x4-qd-2.0 2.3 0.5 bsc see notes 2 and 3 pin #1 0.30 0.18 0.075 2.3 0.2 4.00 0.05 max 0.45 0.35 0.80 0.70 pin #1 top view bottom view side view 1mm 0.08 4.00 0.08
preliminary specifications 2.4 ghz front-end module sst12lf01 19 ?2008 silicon storage technology, inc. s71330-05-000 02/09 table 5: revision history revision description date 00 ? initial release of data sheet sep 2006 01 ? updated pins 9 and 11 in figure 2 on page 3 ? updated pin 6, 9, and 11 in table 1 on page 4 ? updated figure 11 on page 14 ? updated figure 15 on page 16 jan 2007 02 ? updated ?product ordering information? on page 17 sep 2007 03 ? revised product description on page 1 ? changed signal gain value14 db globally ? changed low-noise figure to 1.45 db globally ? edited high temperature stability feature, page 1 ? change low idle current to 75 ma, page 1 ? edited table 2, dc electrical characteristi cs; table 3, ac electrical characteristics rx chain; table 4, ac electrical characteristics tx chain ? replaced figures 3 through 11 with up-to-date graphs on pages 7 through 13 ? added figure 5 on page 8 ? added figure 12 on page 14 ? edited figure 15 on page 16 jun 2008 04 ? revised rx chain gain value from 14 to 12 in ?features:? and ?product description? on page 1 and table 3 on page 6. ? updated figures 3 and 5. nov 2008 05 ? updated ?contact information? on page 20 feb 2009
preliminary specifications 2.4 ghz front-end module sst12lf01 ?2008 silicon storage technology, inc. s71330-05-000 02/09 20 contact information marketing sst communications corp. 5340 alla road, ste. 210 los angeles, ca 90066 tel: 310-577-3600 fax: 310-577-3605 sales and marketing offices north america asia pacific north silicon storage technology, inc. sst macao 1171 sonora court room n, 6th floor, sunnyvale, ca 94086-5308 macao finance center, no. 202a-246, tel: 408-735-9110 rua de pequim, macau fax: 408-735-9036 tel: 853-2870-6022 fax: 853-2870-6023 europe asia pacific south silicon storage technology ltd. sst communications co. mark house 16f-6, no. 75, sec.1, sintai 5 th rd 9-11 queens road sijhih cit y, taipei county 22101 hersham, surrey taiwan, r.o.c. kt12 5lu uk tel: 886-2-8698-1198 tel: 44 (0) 1932-238133 fax: 886-2-8698-1190 fax: 44 (0) 1932-230567 japan korea sst japan sst korea nof tameike bldg, 9f 6f, heungkuk life insurance bldg 6-7 1-1-14 akasaka, minato-ku sunae-dong, bundang-gu, sungnam-si tokyo, japan 107-0052 kyungki-do, korea, 463-020 tel: 81-3-5575-5515 tel: 82-31-715-9138 fax:81-3-5575-5516 fax: 82-31-715-9137 silicon storage technology, inc. ? 1171 sonora court ? sunnyvale, ca 94086 ? telephone 408-735-9110 ? fax 408-735-9036 www.superflash.com or www.sst.com

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