2SK4114 2006-10-25 1 toshiba field effect transistor silicon n-channel mos type ( -mosiv) 2SK4114 switching regulator applications ? low drain-source on resistance: r ds (on) = 2.2 (typ.) ? high forward transfer admittance: |y fs | = 3.5 s (typ.) ? low leakage current: i dss = 100 a (v ds = 720 v) ? enhancement model: v th = 4.0~5.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristic symbol rating unit drain-source voltage v dss 900 v drain-gate voltage (r gs = 20 k ? ) v dgr 900 v gate-source voltage v gss 30 v dc (note 1) i d 5 drain current pulse (t = 1 ms) (note 1) i dp 15 a drain power dissipation (tc = 25c) p d 45 w single pulse avalanche energy (note 2) e as 595 mj avalanche current i ar 5 a repetitive avalanche energy (note 3) e ar 4.5 mj channel temperature t ch 150 c storage temperature range t stg -55~150 c thermal characteristics characteristic symbol max unit thermal resistance, channel to case r th (ch-c) 2.78 c/w thermal resistance, channel to ambient r th (ch-a) 62.5 c/w note 1: ensure that the channel temperature does not exceed 150c during use of the device. note 2: v dd = 90 v, t ch = 25c (initial), l = 43.6 mh, i ar = 5.0 a, r g = 25 ? note 3: repetitive rating: pulse width limited by maximum channel temperature this transistor is an electrostatic-sensitive device. handle with care. unit: mm jedec D jeita sc-67 toshiba 2-10r1b weight: 1.9 g (typ.) 1 3 2
2SK4114 2006-10-25 2 electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit gate leakage current i gss v gs = 30 v, v ds = 0 v ? ? 10 a gate-source breakdown voltage v (br) gss i g = 10 a, v ds = 0 v 30 ? ? v drain cutoff current i dss v ds = 720 v, v gs = 0 v ? ? 100 a drain-source breakdown voltage v (br) dss i d = 10 ma, v gs = 0 v 900 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 4.0 ? 5.0 v drain-source on resistance r ds (on) v gs = 10 v, i d = 3 a ? 2.2 2.5 ? forward transfer admittance ? y fs ? v ds = 20 v, i d = 3 a 1.5 3.5 ? s input capacitance c iss ? 1150 ? reverse transfer capacitance c rss ? 20 ? output capacitance c oss v ds = 25 v, v gs = 0 v, f = 1 mhz ? 110 ? pf rise time t r ? 100 ? turn-on time t on ? 140 ? fall time t f ? 40 ? switching time turn-off time t off ? 130 ? ns total gate charge q g ? 25 ? gate-source charge q gs ? 11 ? gate-drain charge q gd v dd ? = 10 v, i d = 5 a ? 14 ? nc source-drain ratings and characteristics (ta = 25c) characteristic symbol test condition min typ. max unit continuous drain reverse current (note 1) i dr ? ? ? 5 a pulse drain reverse current (note 1) i drp ? ? ? 15 a forward voltage (diode) v dsf i dr = 5 a, v gs = 0 v ? ? ? 1.7 v reverse recovery time t rr ? 900 ? ns reverse recovery charge q rr i dr = 5 a, v gs = 0 v, di dr /dt = 100 a/ s ? 5.4 ? c marking r l = 66.7 ? 0 v 10 v v gs v dd ? = 3 a v out 50 ? duty < = = 10 s lot no. a line indicates lead (pb)-free package or lead (pb)-free finish. k4114 part no. (or abbreviation code)
2SK4114 2006-10-25 3 0 0 2 4 6 10 12 2 10 ta = ? 55c 25 100 4 6 8 drain-source voltage v ds (v) drain-source voltage v ds (v) i d ? v ds drain-source voltage v ds (v) i d ? v ds drain current i d (a) gate-source voltage v gs (v) i d ? v gs gate-source voltage v gs (v) v ds ? v gs drain current i d (a) ? y fs ? ? i d drain current i d (a) r ds (on) ? i d drain-source on resistance r ds (on) ( ? ) 5 4 3 2 1 0 6 0 4 20 24 v gs = 6 v 8 10 6.5 common source tc = 25c pulse test forward transfer admittance ? y fs ? (s) drain current i d (a) drain current i d (a) 5 4 2 1 0 0 4 8 12 16 20 v gs = 6 v 7 7.25 6.5 8 10 24 3 common source tc = 25c pulse test common source v ds = 20 v pulse test common source tc = 25 pulse test 0 8 12 16 20 0 i d = 5 a 4 8 12 16 20 1.5 3 4 common source v ds = 20 v pulse test 0.01 1 10 0.01 0.1 10 25 100 ta = ? 55c common source tc = 25c pulse test 1 0.01 0.1 1 10 5 3 10 v gs = 10 v ? 15v 7.5 6.75 8 1 0.1 7.5 7.25 7 6.75 12 8 16
2SK4114 2006-10-25 4 100 40 0 0 40 80 120 160 20 60 80 200 drain power dissipation p d (w) gate threshold voltage v th (v) case temperature tc (c) r ds (on) ? tc drain-source on resistance r ds (on) ( ? ) drain-source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) drain-source voltage v ds (v) capacitance ? v ds capacitance c (pf) case temperature tc (c) v th ? tc case temperature tc (c) p d ? tc gate-source voltage v gs (v) total gate charge q g (nc) dynamic input / output characteristics drain-source voltage v ds (v) 0 10 20 v dd = 100 v v ds v gs 400 200 30 40 common source i d = 5 a tc = 25c pulse test common source v gs = 0 v f = 1 mhz tc = 25c 1 0.1 10 1000 10000 1 10 100 c iss c oss c rss common source pulse test 160 ? 40 0 40 80 120 ? 80 10 8 6 4 2 0 i d = 5a 1.5 3 v gs = 10 v common source tc = 25c pulse test 0 0.1 ? 0.4 1 10 ? 0.8 ? 1.2 ? 1.6 v gs = 0, ? 1,1 v 10 3 common source v ds = 10 v i d = 1 ma pulse test 0 2 4 8 ? 80 ? 40 0 40 80 120 160 6 100 0 100 200 500 400 300 0 4 8 20 16 12
2SK4114 2006-10-25 5 1000 800 600 400 200 0 25 50 75 100 125 150 drain-source voltage v ds (v) safe operating area channel temperature (initial) t ch (c) e as ? t ch avalanche energy e as (mj) r th ? t w pulse width t w (s) normalized transient thermal impedance r th (t) /r th (ch-c) 0.01 1 0.1 1 10 100 10 1000 100 10000 * single nonrepetitive pulse tc=25 curves must be derated linearly with increase in temperature . i d max (pulsed) * i d max (continuous) * dc operation tc = 25c 100 s * 1 ms * v dss max ? 15 v 15 v test circuit waveform i ar b vdss v dd v ds r g = 25 ? v dd = 90 v, l = 43.6mh ? ? ? ? ? ? ? ? ? ? ? ? = v dd b vdss b vdss 2 i l 2 1 as drain current i d (a) t p dm t duty = t/t r th (ch-c) = 1.25c/w duty = 0.5 0.2 0.1 single pulse 0.05 0.02 0.01 0.01 10 0.1 1 10 100 1 10 100 1 10 t p dm t duty = t/t r th (ch-c) = 2.78c/w 0.001
2SK4114 2006-10-25 6 restrictions on product use 060116eaa ? the information contained herein is subject to change without notice. 021023_d ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utiliz ing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handli ng guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc. 021023_a ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. 021023_b ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. 060106_q ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. 021023_c
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