BPW96 document number 81532 rev. 1.5, 27-nov-06 vishay semiconductors www.vishay.com 1 94 8 391 silicon npn phototransistor description BPW96 is a high speed and high sensitive silicon npn epitaxial planar phototransistor in a standard t-1? ( ? 5 mm) package. due to its waterclear epoxy the device is sensitive to visible and near infrared radiation. the viewing angle of 20 makes it insensible to ambient straylight. features ? fast response times ? high photo sensitivity ? standard t-1? ( ? 5 mm) clear plastic package ? angle of half sensitivity ? = 20 ? suitable for visible and near infrared radiation ? selected into sensitivity groups ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications ? detector in electronic control and drive circuits absolute maximum ratings t amb = 25 c, unless otherwise specified e4 parameter test condition symbol value unit collector emitter voltage v ceo 70 v emitter collector voltage v eco 5v collector current i c 50 ma collector peak current t p /t = 0.5, t p 10 ms i cm 100 ma total power dissipation t amb 47 c p tot 150 mw junction temperature t j 100 c storage temperature range t stg - 55 to + 100 c soldering temperature t 3 s t sd 260 c thermal resistance junction/ ambient r thja 350 k/w
www.vishay.com 2 document number 81532 rev. 1.5, 27-nov-06 BPW96 vishay semiconductors electrical characteristics t amb = 25 c, unless otherwise specified optical characteristics t amb = 25 c, unless otherwise specified type dedicated characteristics typical characteristics t amb = 25 c unless otherwise specified parameter test condition symbol min ty p. max unit collector emitter breakdown voltage i c = 1 ma v (br)ceo 70 v collector-emitter dark current v ce = 20 v, e = 0 i ceo 1 200 na collector-emitter capacitance v ce = 5 v, f = 1 mhz, e = 0 c ceo 3pf parameter test condition symbol min ty p. max unit angle of half sensitivity ? 20 deg wavelength of peak sensitivity p 850 nm range of spectral bandwidth 0.5 620 to 980 nm collector emitter saturation voltage e e = 1 mw/cm 2 , = 950 nm, i c = 0.1 ma v cesat 0.3 v tu r n - o n t i m e v s = 5 v, i c = 5 ma, r l = 100 t on 2.0 s turn-off time v s = 5 v, i c = 5 ma, r l = 100 t off 2.3 s cut-off frequency v s = 5 v, i c = 5 ma, r l = 100 f c 180 khz parameter test condition part symbol min ty p. max unit collector light current e e = 1 mw/cm 2 , = 950 nm, v ce = 5 v BPW96a i ca 1.5 2.5 4.5 ma BPW96b i ca 2.5 4.5 7.5 ma BPW96c i ca 4.5 8 15 ma figure 1. total power dissipati on vs. ambient temperature 0 40 8 0 120 160 200 p ? total po w er dissipation (m w ) tot t am b ?am b ient temperat u re (c) 100 8 0 60 40 20 0 94 8 300 r thja figure 2. collector dark current vs. ambient temperature 20 100 40 60 8 0 10 10 1 10 2 10 3 10 4 v ce = 20 v t am b - am b ient temperat u re (c) i ceo - collector dark c u rrent (na) 94 8 304
BPW96 document number 81532 rev. 1.5, 27-nov-06 vishay semiconductors www.vishay.com 3 figure 3. relative collector cu rrent vs. ambient temperature figure 4. collector light current vs. irradiance figure 5. collector light current vs. collector emitter voltage 0 0.6 0. 8 1.0 1.2 1.4 2.0 20 40 60 8 0 100 1.6 1. 8 94 8 239 t am b - am b ient temperat u re (c) i ca rel - relati v e collector c u rrent v ce = 5 v e e = 1 m w /cm 2 = 950 nm 0.01 0.1 1 0.01 0.1 1 10 10 94 8 296 v ce =5 v = 950 nm bp w 96a bp w 96b bp w 96c e e ? irradiance (m w /cm 2 ) i ? collector light c u rrent (ma) ca 0.1 1 10 0.1 1 10 i ? collector light c u rrent (ma) ca v ce ? collector emitter v oltage ( v ) 100 94 8 297 e e = 1 m w /cm 2 0.5 m w /cm 2 0.2 m w /cm 2 0.1 m w /cm 2 0.05 m w /cm 2 = 950 nm bp w 96b figure 6. collector emitter capac itance vs. collector emitter voltage figure 7. turn on/turn off time vs. collector current figure 8. relative spectral sensitivity vs. wavelength 0.1 1 10 0 2 4 6 8 10 v ce ? collector emitter v oltage ( v ) 100 94 8 301 c ? collector emitter capacitance (pf) ceo f = 1 mhz 0 0246 8 10 12 14 2 8 6 4 v ce = 5 v r l = 100 w = 950 nm t off t on i c - collector c u rrent (ma) t on /t off - t u rn on/t u rn off time (s) 94 8 293 400 600 1000 0 0.2 0.4 0.6 0. 8 1.0 s( ) - relati v e spectral sensiti v ity rel - w a v elength (nm) 94 8 34 8 8 00
www.vishay.com 4 document number 81532 rev. 1.5, 27-nov-06 BPW96 vishay semiconductors package dimensions in mm figure 9. relative radiant sensitivity vs. angular displacement 0.4 0.2 0 0.2 0.4 s ? relati v e sensiti v ity rel 0.6 94 8 299 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 96 12192
BPW96 document number 81532 rev. 1.5, 27-nov-06 vishay semiconductors www.vishay.com 5 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releas es of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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