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this is information on a product in full production. april 2013 docid022522 rev 4 1/15 15 STW88N65M5 stwa88n65m5 n-channel 650 v, 0.024 typ., 84 a, mdmesh? v power mosfet in to-247 and to-247 long leads packages datasheet - production data figure 1. internal schematic diagram features ? worldwide best r ds(on) in to-247 ? higher v dss rating ? higher dv/dt capability ? excellent switching performance ? easy to drive ? 100% avalanche tested applications ? high efficiency switching applications: ?servers ?pv inverters ? telecom infrastructure ? multi kw battery chargers description these devices are n-channel mdmesh? v power mosfets based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. to-247 1 2 3 to-247 long leads $0y ' * 6 order codes v dss @t jmax. r ds(on) max. i d STW88N65M5 710 v < 0.029 84 a stwa88n65m5 table 1. device summary order codes marking packages packaging STW88N65M5 88n65m5 to-247 tube stwa88n65m5 to-247 long leads www.st.com
contents STW88N65M5, stwa88n65m5 2/15 docid022522 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
docid022522 rev 4 3/15 STW88N65M5, stwa88n65m5 electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate- source voltage 25 v i d drain current (continuous) at t c = 25 c 84 a i d drain current (continuous) at t c = 100 c 50.5 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 336 a p tot total dissipation at t c = 25 c 450 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 15 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 2000 mj dv/dt (2) 2. i sd 84 a, di/dt = 400 a/s, peak v ds < v (br)dss , v dd = 400 v peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.28 c/w r thj-amb thermal resistance junction-ambient max 50 c/w t l maximum lead temperature for soldering purpose 300 c
electrical characteristics STW88N65M5, stwa88n65m5 4/15 docid022522 rev 4 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = 650 v v ds = 650 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 42 a 0.024 0.029 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 8825 223 11 - pf pf pf c o(tr) (1) 1. c o(tr) is a constant capacitance value that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . equivalent capacitance time related v gs = 0, v ds = 0 to 520 v - 778 - pf c o(er) (2) 2. c o(er) is a constant capacitanc e value that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . equivalent capacitance energy related v gs = 0, v ds = 0 to 520 v - 202 - pf r g intrinsic gate resistance f = 1 mhz open drain - 1.79 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 42 a, v gs = 10 v (see figure 16 ) - 204 51 84 - nc nc nc
docid022522 rev 4 5/15 STW88N65M5, stwa88n65m5 electrical characteristics table 6. switching times symbol parameter test conditions min. typ. max. unit t d(v) t r(v) t f(i) t c(off) voltage delay time voltage rise time current fall time crossing time v dd = 400 v, i d = 56 a, r g = 4.7 , v gs = 10 v (see figure 17 ) (see figure 20 ) - 141 16 29 56 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 84 336 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 84 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 84 a, di/dt = 100 a/s v dd = 100 v (see figure 17 ) - 544 14 50 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 84 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 17 ) - 660 20 60 ns c a
electrical characteristics STW88N65M5, stwa88n65m5 6/15 docid022522 rev 4 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on resistance i d 100 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse am10392v1 i d 50 0 0 10 v ds (v) 20 (a) 5 15 25 100 8v 6v 7v v gs =10v 150 200 250 am10393v1 i d 75 50 25 0 3 5 v gs (v) 7 (a) 4 6 100 125 150 175 v ds =30v 8 9 200 225 am10394v1 v gs 6 4 2 0 0 50 q g (nc) (v) 200 8 100 150 10 v dd =520v i d =42a 12 300 200 100 0 400 500 v ds v ds (v) 14 am10395v1 r ds(on) 0.026 0.024 0.022 0.020 0 20 i d (a) ( ) 10 30 v gs =10v 50 40 60 70 80 am10396v1
docid022522 rev 4 7/15 STW88N65M5, stwa88n65m5 electrical characteristics figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics figure 13. normalized v ds vs temperature c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 10000 100 ciss coss crss 100000 am10397v1 e oss 15 10 5 0 0 100 v ds (v) (j) 400 20 200 300 25 30 500 600 35 40 am10398v1 v gs(th) 1.00 0.90 0.80 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d =250a am04972v1 r ds(on) 1.7 1.5 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1.3 1.9 2.1 125 i d = 42 a v gs = 10 v am05501v2 v sd 0 20 i sd (a) (v) 10 50 30 40 0 0.2 0.4 0.6 0.8 1.0 1.2 t j =-50c t j =150c t j =25c am04974v1 v ds -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.98 1.00 1.04 1.06 1.02 i d = 1ma 1.08 am10399v1
electrical characteristics STW88N65M5, stwa88n65m5 8/15 docid022522 rev 4 figure 14. switching losses vs gate resistance (1) 1. eon including reverse recovery of a sic diode e 0 0 20 r g ( ) ( j) 10 30 1000 2000 40 i d =56a v dd =400v eon eoff 3000 v gs =10v t j =25c am11171v1
docid022522 rev 4 9/15 STW88N65M5, stwa88n65m5 test circuits 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive waveform figure 20. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d $0y ,g 9jv 9gv 9gv ,g 9jv rq 7ghod\rii 7idoo 7ulvh 7f u r v v r y h u 9gv ,g 9jv,w rq rii 7idoo 7ulvh &rqfhswzdyhirupiru,qgxfwlyh/rdg7xuqrii
package mechanical data STW88N65M5, stwa88n65m5 10/15 docid022522 rev 4 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 8. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
docid022522 rev 4 11/15 STW88N65M5, stwa88n65m5 package mechanical data figure 21. to-247 drawing 0075325_g
package mechanical data STW88N65M5, stwa88n65m5 12/15 docid022522 rev 4 table 9. to-247 long leads mechanical data dim. mm min. typ. max. a4.90 5.15 d1.85 2.10 e0.55 0.67 f1.07 1.32 f1 1.90 2.38 f2 2.87 3.38 g 10.90 bsc h 15.77 16.02 l 20.82 21.07 l1 4.16 4.47 l2 5.49 5.74 l3 20.05 20.30 l4 3.68 3.93 l5 6.04 6.29 m2.25 2.55 v 10 v1 3 v3 20 dia. 3.55 3.66
docid022522 rev 4 13/15 STW88N65M5, stwa88n65m5 package mechanical data figure 22. to-247 long leads drawing 7395426_g
revision history STW88N65M5, stwa88n65m5 14/15 docid022522 rev 4 5 revision history table 10. document revision history date revision changes 23-nov-2011 1 first release. 09-dec-2011 2 document status promoted from preliminary data to datasheet. 12-jun-2012 3 updated title on the coverpage. 30-nov-2012 4 added new part number: stwa88n65m5 updated: section 4: package mechanical data
docid022522 rev 4 15/15 STW88N65M5, stwa88n65m5 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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