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? products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by micron without notice. products are only warranted by micron to meet micron?s production data sheet specifications. 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 1 ?2003, micron technology inc. 128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance ? small-outline ddr sdram module mt9vddt1672h(i) ?128mb, mt9vddt3272h(i) ?256mb, mt18vdds6472h(i) ? 512mb (advance), mt9vddt6472h(i) ? 512mb, mt18vdds12872h(i) ? 1gb (advance) for the latest data sheet, please refer to the micron web site: www.micron.com/moduleds features ? 200-pin, small-outline, dual in-line memory module (sodimm) fast data transfer rates: pc1600, pc2100, or pc2700 utilizes 200 mt/s, 266 mt/s, and 333 mt/s ddr sdram components or twindie ddr sdram components ecc, 1-bit error detection and correction 128mb (16 meg x 72), 256mb (32 meg x 72), 512mb (64 meg x 72), and 1gb (128 meg x 72) v dd = v dd q = +2.5v v ddspd = +2.3v to +3.6v 2.5v i/o (sstl_2 compatible) commands entered on each positive ck edge dqs edge-aligned with data for reads; center- aligned with data for writes internal, pipelined double data rate (ddr) architecture; two data accesses per clock cycle bidirectional data strobe (dqs) transmitted/ received with data?i.e., source-synchronous data capture differential clock inputs ck and ck# four internal device banks for concurrent operation programmable burst lengths: 2, 4, or 8 auto precharge option auto refresh and self refresh modes 15.625s (mt9vddt1672h), 7.8125s (mt9vddt3272h, mt18vdds6472h, mt9vddt6472h, and mt18vdds12872h) maximum average periodic refresh interval serial presence detect (spd) with eeprom programmable read cas latency figure 1: 200-pin sodimm (mo-224) note: 1. cl = device cas (read) latency. 2. -335 speed grade available in single-rank module only. 3. consult micron for availability; industrial tem- perature option available in -265 speed only. options marking package 200-pin sodimm (gold) g frequency/cas latency 6.0ns/167 mhz (333 mt/s) cl = 2.5 1 -335 2 7.5ns/133 mhz (266 mt/s) cl = 2 -26a 7.5ns/133 mhz (266 mt/s) cl = 2.5 -265 10ns/100 mhz (200 mt/s) cl = 2 -202 operating temperature range commercial (0c t a +70c) none industrial (-40c t a +85c) it 3 table 1: address table mt9vddt1672h mt9vddt3272h mt18vdds6472h mt9vddt6472h mt18vdds12872h refresh count 4k 8k 8k 8k 8k row addressing 4k (a0?a11) 8k (a0?a12) 8k (a0?a12) 8k (a0?a12) 8k (a0?a12) device bank addressing 4 (ba0, ba1) 4 (ba0, ba1) 4 (ba0, ba1) 4 (ba0, ba1) 4 (ba0, ba1) device configuration 16 meg x 8 32 meg x 8 64 meg x 8 32 meg x 8 64 meg x 8 column addressing 1k (a0?a9) 1k (a0?a9) 2k (a0?a9, a11) 1k (a0?a9) 2k (a0?a9, a11) module rank addressing 1 (s0#) 1 (s0#) 1 (s0#) 2 (s0#, s1#) 2 (s0#, s1#)
128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 2 ?2003, micron technology inc. note: all part numbers end with a two-place code (not shown), designating component and pcb revisions. consult factory for current revision codes. example: mt9vddt3272hg-265a1. table 2: part numbers and timing parameters part number module density configuration module bandwidth memory clock/ data bit rate latency (cl - t rcd - t rp) mt9vddt1672h(i)g-335__ 128mb 16 meg x 72 2.7 gb/s 6.0ns/333 mt/s 2.5-3-3 mt9vddt1672h(i)g-26a__ 128mb 16 meg x 72 2.1 gb/s 7.5ns/266 mt/s 2-3-3 mt9vddt1672h(i)g-265__ 128mb 16 meg x 72 2.1 gb/s 7.5ns/266 mt/s 2.5-3-3 mt9vddt1672h(i)g-202__ 128mb 16 meg x 72 1.6 gb/s 10ns/200 mt/s 2-2-2 mt9vddt3272h(i)g-335__ 256mb 32 meg x 72 2.7 gb/s 6.0ns/333 mt/s 2.5-3-3 mt9vddt3272h(i)g-26a__ 256mb 32 meg x 72 2.1 gb/s 7.5ns/266 mt/s 2-3-3 mt9vddt3272h(i)g-265__ 256mb 32 meg x 72 2.1 gb/s 7.5ns/266 mt/s 2.5-3-3 mt9vddt3272h(i)g-202__ 256mb 32 meg x 72 1.6 gb/s 10ns/200 mt/s 2-2-2 mt18vdds6472h(i)g-335__ 512mb 64 meg x 72 2.7 gb/s 6.0ns/333 mt/s 2.5-3-3 mt18vdds6472h(i)g-26a__ 512mb 64 meg x 72 2.1 gb/s 7.5ns/266 mt/s 2-3-3 mt18vdds6472h(i)g-265__ 512mb 64 meg x 72 2.1 gb/s 7.5ns/266 mt/s 2.5-3-3 mt18vdds6472h(i)g-202__ 512mb 64 meg x 72 1.6 gb/s 10ns/200 mt/s 2-2-2 mt9vddt6472h(i)g-26a__ 512mb 64 meg x 72 2.1 gb/s 7.5ns/266 mt/s 2-3-3 mt9vddt6472h(i)g-265__ 512mb 64 meg x 72 2.1 gb/s 7.5ns/266 mt/s 2.5-3-3 mt9vddt6472h(i)g-202__ 512mb 64 meg x 72 1.6 gb/s 10ns/200 mt/s 2-2-2 mt18vdds12872h(i)g-26a__ 1gb 128 meg x 72 2.1 gb/s 7.5ns/266 mt/s 2-3-3 mt18vdds12872h(i)g-265__ 1gb 128 meg x 72 2.1 gb/s 7.5ns/266 mt/s 2.5-3-3 mt18vdds12872h(i)g-202__ 1gb 128 meg x 72 1.6 gb/s 10ns/200 mt/s 2-2-2
128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 3 ?2003, micron technology inc. note: pin 99 is a no connect for mt9vddt1672h modules, or a12 for all other modules. figure 2: module layout table 3: pin assignment (200-pin sodimm front) pin symbol pin symbol pin symbol pin symbol 1v ref 51 v ss 101 a9 151 dq42 3v ss 53 dq19 103 vss 153 dq43 5dq055dq24 105 a7 155 vdd 7dq1 57 v dd 107 a5 157 vdd 9v dd 59 dq25 109 a3 159 v ss 11 dqs0 61 dqs3 111 a1 161 v ss 13 dq2 63 v ss 113 v dd 163 dq48 15 v ss 65 dq26 115 a10 165 dq49 17 dq3 67 dq27 117 ba0 167 v dd 19 dq8 69 v dd 119 we# 169 dqs6 21 v dd 71 cb0 121 s0# 171 dq50 23 dq9 73 cb1 123 nc 173 v ss 25 dqs1 75 v ss 125 v ss 175 dq51 27 v ss 77 dqs8 127 dq32 177 dq56 29 dq10 79 cb2 129 dq33 179 v dd 31 dq11 81 v dd 131 v dd 181 dq57 33 v dd 83 cb3 133dqs4183dqs7 35 ck0 85 nc 135 dq34 185 v ss 37 ck0# 87 v ss 137 v ss 187 dq58 39 v ss 89 ck2 139 dq35 189 dq59 41 dq16 91 ck2# 141 dq40 191 v dd 43 dq17 93 v dd 143 v dd 193 sda 45 v dd 95 cke1 145 dq41 195 scl 47 dqs2 97 nc 147 dqs5 197 v ddspd 49 dq18 99 nc/ a12 149 v ss 199 nc table 4: pin assignment (200-pin sodimm back) pin symbol pin symbol pin symbol pin symbol 2v ref 52 v ss 102 a8 152 dq46 4v ss 54 dq23 104 v ss 154 dq47 6dq456dq28 106 a6 156 v dd 8dq5 58 v dd 108 a4 158 ck1# 10 v dd 60 dq29 110 a2 160 ck1 12dm062dm3 112 a0 162 v ss 14 dq6 64 v ss 114 v dd 164 dq52 16 v ss 66 dq30 116 ba1 166 dq53 18 dq7 68 dq31 118 ras# 168 v dd 20 dq12 70 v dd 120 cas# 170 dm6 22 v dd 72 cb4 122 s1# 172 dq54 24 dq13 74 cb5 124 nc 174 v ss 26 dm1 76 v ss 126 v ss 176 dq55 28 v ss 78 dm8 128 dq36 178 dq60 30 dq14 80 cb6 130 dq37 180 v dd 32 dq15 82 v dd 132 v dd 182 dq61 34 v dd 84 cb7 134 dm4 184 dm7 36 v dd 86 nc 136 dq38 186 v ss 38 v ss 88 v ss 138 v ss 188 dq62 40 v ss 90 v ss 140 dq39 190 dq63 42 dq20 92 v dd 142 dq44 192 v dd 44 dq21 94 v dd 144 v dd 194 sa0 46 v dd 96 cke0 146 dq45 196 sa1 48 dm2 98 nc 148 dm5 198 sa2 50 dq22 100 a11 150 v ss 200 nc pin 1 pin 199 (all odd pins) pin 2 pin 200 (all even pins) back view front view u1 u2 u3 u4 u5 u9 u10 u6 u7 u8
128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 4 ?2003, micron technology inc. table 5: pin descriptions refer to pin assignment tables on page 3 for pin number and symbol information pin numbers symbol type description 1, 2 v ref input sstl_2 reference voltage. 118, 119, 120 we#, cas#, ras# input command inputs: ras#, cas#, and we# (along with s#) define the command being entered. 35, 37, 89, 91, 158, 160 ck0, ck0#, ck1, ck1#, ck2, ck2# input clock: ck, ck# are differential clock inputs. all address and control input signals are sampled on the crossing of the positive edge of ck,and negative edge of ck#. output data (dqs and dqs) is referenced to the crossings of ck and ck#. 95, 96 cke0, cke1 input clock enable: cke high activates and cke low deactivates the internal clock, input buffers and output drivers. taking cke low provides precharge power-down and self refresh operations (all device banks idle), or active power-down (row active in any device bank).cke is synchronous for power- down entry and exit, and for self refresh entry. cke is asynchronous for self refresh exit and for disabling the outputs. cke must be maintained high throughout read and write accesses. input buffers (excluding ck, ck# and cke) are disabled during power-down. input buffers (excluding cke) are disabled during self refresh. cke is an sstl_2 input but will detect an lvcmos low level after vdd is applied. 121, 122 s0#, s1# input chip selects: s# enables (registered low) and disables (registered high) the command decoder. all commands are masked when s# is registered high. s# is considered part of the command code. 116, 117 ba0, ba1 input bank address: ba0, ba1 define to which device bank an active, read, write, or precharge command is being applied. 99 (a12) , 100, 101, 102, 105, 106, 107, 108, 109, 110, 111, 112, 115 a0-a11 mt9vddt1672h a0-a12 (99) mt9vddt3272h, mt18vdds6472h, mt9vddt6472h, mt18vdds12872h input address inputs: provide the row address for active commands, and the column address and auto precharge bit (a10) for read/ write commands, to select one location out of the memory array in the respective device bank. a10 sampled during a precharge command determines whether the precharge applies to one device bank (a10 low, device bank selected by ba0, ba1) or all device banks (a10 high). the address inputs also provide the op-code during a mode register set command. ba0 and ba1 define which mode register (mode register or extended mode register) is loaded during the load mode register command. 11, 25, 47, 61, 77, 133, 147, 169, 183 dqs0-dqs8 input/ output data strobe: output with read data, input with write data. dqs is edge-aligned with read data, centered in write data. used to capture data. 12, 26, 48, 62, 78, 134, 148, 170, 184 dm0-dm8 input data mask: dm is an input mask signal for write data. input data is masked when dm is sampled high along with that input data during a write access. dm is sampled on both edges of dqs. although dm pins are input-only, the dm loading is designed to match that of dq and dqs pins. 71,72, 73, 74, 79, 80, 83, 84 cb0-cb7 input/ output check bits: ecc, 1-bit error detection and correction.
128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 5 ?2003, micron technology inc. 5-8, 13-20, 23-24, 29-32, 41-44, 49-50, 53-56, 59- 60, 65-68, 127-130, 135- 136, 139-142, 145-146, 151-154, 163-166, 171- 172, 175-178, 181-182, 187-190 dq0-dq63 input/ output data i/os: data bus. 195 scl input serial clock for presence-detect: scl is used to synchronize the presence-detect data transfer to and from the module. 194, 196, 198 sa0-sa2 input presence-detect address inputs: these pins are used to configure the presence-detect device. 193 sda input/ output serial presence-detect data: sda is a bidirectional pin used to transfer addresses and data into and out of the presence-detect portion of the module. 9-10, 21-22, 33-34, 36, 45- 46, 57-58, 69-70, 81-82, 92-94, 113-114, 131-132, 143-144, 155-157, 167- 168, 17-180, 191-192 v dd supply power supply: +2.5v 0.2v. please see note 49 on page 26. 3-4 15-16, 27-28, 38-40, 51-52, 63-64, 75-76, 87- 88, 90, 103-104, 125-126, 137-138, 149-150, 159, 161-162, 173-174, 185- 186 v ss supply ground. 197 v ddspd supply serial eeprom positive power supply: +2.3v to +3.6v. 85, 97, 99 (only for mt9vddt1672h), 123, 199, 98, 124, 200 nc ? no connect: these pins should be left unconnected. table 5: pin descriptions (continued) refer to pin assignment tables on page 3 for pin number and symbol information pin numbers symbol type description
128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 6 ?2003, micron technology inc. figure 3: functional block diagram, (mt9vddt1672h(i), mt9vddt3272h(i), mt9vddt6472h(i)) a0 sa0 serial pd sda a1 sa1 a2 sa2 ba0, ba1 a0-a11 3 a0-a12 4 ras# ba0, ba1: ddr sdrams a0-a11: ddr sdrams a0-a12: ddr sdrams ras#: ddr sdrams cas#: ddr sdrams cke0: ddr sdrams we#: ddr sdrams cas# cke0 we# v ref v ss ddr sdrams ddr sdrams dq56 dq57 dq58 dq59 dq60 dq61 dq62 dq63 u6 dq48 dq49 dq50 dq51 dq52 dq53 dq54 dq55 u7 dq40 dq41 dq42 dq43 dq44 dq45 dq46 dq47 u5 dq32 dq33 dq34 dq35 dq36 dq37 dq38 dq39 u3 dq24 dq25 dq26 dq27 dq28 dq29 dq30 dq31 u10 dq16 dq17 dq18 dq19 dq20 dq21 dq22 dq23 u9 dq8 dq9 dq10 dq11 dq12 dq13 dq14 dq15 dm cs# dqs u1 dq dq dq dq dq dq dq dq dq0 dq1 dq2 dq3 dq4 dq5 dq6 dq7 dm0 s0# u2 wp scl dm cs# dqs dm cs# dqs dm cs# dqs dqs0 dm4 dqs4 dm1 dqs1 dm5 dqs5 dm2 dqs2 dm6 dqs6 dm cs# dqs u4 dm cs# dqs dm cs# dqs dm cs# dqs dm cs# dqs dm3 dqs3 dm7 dqs7 dm8 dqs8 cb0 cb1 cb2 cb3 cb4 cb5 cb6 cb7 v ddspd v dd ddr sdrams spd u8 ck0 ck0# 120 dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq 3pf u1 u9 u10 ck1 ck1# 120 3pf u4 u5 u6 ck2 ck2# 120 3pf u2 u3 u7 note: 1. all resistor values are 22 unless otherwise specified. 2. per industry standard, micron modules utilize various component speed grades, as referenced in the module part numbering guide at www.micron.com/numberguide . 3. mt9vddt1672h 4. mt9vddt3272h and mt9vddt6472h ddr sdrams = mt46v16m8tg for mt9vddt1672hg (commercial temp.) ddr sdrams = mt46v32m8tg for mt9vddt3272hg (commercial temp.) ddr sdrams = mt46v64m8tg for mt18vdds6472hg (commercial temp.) ddr sdrams = mt46v16m8tg-itfor mt9vddt1672hg (indust. temp.) ddr sdrams = mt46v32m8tg-it for mt9vddt3272hg (indust. temp.) ddr sdrams = mt46v64m8tg-it for mt18vdds6472hg (indust. temp.) contact micron for availability of -it modules.
128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 7 ?2003, micron technology inc. figure 4: functional block diagram, (mt18vdds6472h(i), mt18vdds12872h(i)) a0 sa0 serial pd sda a1 sa1 a2 sa2 ba0, ba1 a0-a12 ras# ba0, ba1: ddr sdrams a0-a12: ddr sdrams ras#: ddr sdrams cas#: ddr sdrams cke0: ddr sdrams u1b-u7b, u9b, u10b cke1: ddr sdrams u1t-u7t, u9t, u10t we#: ddr sdrams cas# cke0 cke1 we# dq56 dq57 dq58 dq59 dq60 dq61 dq62 dq63 u6b dq48 dq49 dq50 dq51 dq52 dq53 dq54 dq55 u7b dq40 dq41 dq42 dq43 dq44 dq45 dq46 dq47 u5b dq32 dq33 dq34 dq35 dq36 dq37 dq38 dq39 u3b dq24 dq25 dq26 dq27 dq28 dq29 dq30 dq31 u10b dq16 dq17 dq18 dq19 dq20 dq21 dq22 dq23 u9b dq8 dq9 dq10 dq11 dq12 dq13 dq14 dq15 dm cs# dqs u1b dq dq dq dq dq dq dq dq dq0 dq1 dq2 dq3 dq4 dq5 dq6 dq7 dm0 s0# u2b wp scl u1t u9t u2t u5t s1# dm cs# dqs dm cs# dqs dm cs# dqs dm cs# dqs dm cs# dqs dm cs# dqs dqs0 dm4 dqs4 dm1 dqs1 dm5 dqs5 u7t dm cs# dqs dm2 dqs2 dm6 dqs6 dm cs# dqs dm cs# dqs u4b u4t dm cs# dqs dm cs# dqs dm cs# dqs dm cs# dqs dm cs# dqs dm3 dqs3 dm7 dqs7 u10t dm cs# dqs u6t dm cs# dqs dm8 dqs8 u3t dm cs# dqs cb0 cb1 cb2 cb3 cb4 cb5 cb6 cb7 u8 ck0 ck0# 120 3pf u1t, u1b u9t, u9b u10t, u10b ck1 ck1# 120 3pf u4t, u4b u5t, u5b u6t, u6b ck2 ck2# 120 3pf u2t, u2b u3t, u3b u7t, u7b dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq dq v ref v ss ddr sdrams ddr sdrams v ddspd v dd ddr sdrams spd note: 1. all resistor values are 22 unless otherwise specified. 2. 'b' = bottom portion of twindie sdram, 't' = top portion of twindie sdram. 3. per industry standard, micron modules utilize various component speed grades, as referenced in the module part numbering guide at www.micron.com/numberguide . ddr sdrams = mt46v64m8s2 for mt9vddt6472hg ddr sdrams = mt46v64m8s2 for mt18vdds12872hg -it option is not available for twindie components.
128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 8 ?2003, micron technology inc. general description the mt9vddt1672h(i), mt9vddt3272h(i), mt18vdds6472h(i), mt9vddt6472h(i), and mt18vdds12872h(i) are high-speed cmos, dynamic random-access, 128mb, 256mb, 512mb, and 1gb memory modules organized in x72 (ecc) configura- tion. these modules use internally configured quad- bank ddr sdrams. these ddr sdram modules use a double data rate architecture to achieve high-speed operation. the double data rate architecture is essentially a 2 n - prefetch architecture with an interface designed to transfer two data words per clock cycle at the i/o pins. a single read or write access for the ddr sdram mod- ule effectively consists of a single 2 n -bit wide, one- clock-cycle data transfer at the internal dram core and two corresponding n -bit wide, one-half-clock- cycle data transfers at the i/o pins. a bidirectional data strobe (dqs) is transmitted externally, along with data, for use in data capture at the receiver. dqs is an intermittent strobe transmitted by the ddr sdram during reads and by the memory controller during writes. dqs is edge-aligned with data for reads and center-aligned with data for writes. these ddr sdram modules operate from differen- tial clock inputs (ck and ck#); the crossing of ck going high and ck# going low will be referred to as the positive edge of ck. commands (address and con- trol signals) are registered at every positive edge of ck. input data is registered on both edges of dqs, and out- put data is referenced to both edges of dqs, as well as to both edges of ck. read and write accesses to the ddr sdram modules are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. accesses begin with the registra- tion of an active command, which is then followed by a read or write command. the address bits registered coincident with the active command are used to select the device bank and row to be accessed [ba0, ba1 select device bank; a0?a11 select device row for the module mt9vddt1672h(i); a0?a12 select device row for mod- ules mt9vddt3272h(i ), mt18vdds6472h(i), mt9vddt6472h(i), and mt18vdds12872h(i)]. the address bits registered coincident with the read or write command are used to select the device bank and the starting device column location for the burst access. these ddr sdram modules provide for program- mable read or write burst lengths of 2, 4, or 8 loca- tions. an auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst access. the pipelined, multibank architecture of ddr sdram modules allows for concurrent operation, thereby providing high effective bandwidth by hiding row precharge and activation time. an auto refresh mode is provided, along with a power-saving power-down mode. all inputs are com- patible with the jedec standard for sstl_2. all out- puts are sstl_2, class ii compatible. for more information regarding ddr sdram operation, refer to the 128mb, 256mb, and 512mb ddr sdram and 512mb and 1gb ddr twindie component data sheets. serial presence-detect operation these ddr sdram modules incorporate serial presence-detect (spd). the spd function is imple- mented using a 2,048-bit eeprom. this nonvolatile storage device contains 256 bytes. the first 128 bytes can be programmed by micron to identify the module type and various sdram organizations and timing parameters. the remaining 128 bytes of storage are available for use by the customer. system read/ write operations between the master (system logic) and the slave eeprom device (dimm) occur via a standard i 2 c bus using the dimm?s scl (clock) and sda (data) signals, together with sa (2:0), which pro- vide eight unique dimm/eeprom addresses. write protect (wp) is tied to ground on the module, perma- nently disabling hardware write protect. mode register definition the mode register is used to define the specific mode of operation of the ddr sdram. this definition includes the selection of a burst length, a burst type, a cas latency and an operating mode, as shown in fig- ure 5, mode register definition diagram, on page 9. the mode register is programmed via the mode reg- ister set command (with ba0 = 0 and ba1 = 0) and will retain the stored information until it is pro- grammed again or the device loses power (except for bit a8, which is self-clearing). reprogramming the mode register will not alter the contents of the memory, provided it is performed cor- rectly. the mode register must be loaded (reloaded) when all device banks are idle and no bursts are in progress, and the controller must wait the specified time before initiating the subsequent operation. vio- lating either of these requirements will result in unspecified operation. mode register bits a0?a2 specify the burst length, a3 specifies the type of burst (sequential or interleaved), a4?a6 specify the cas latency, and a7?a11 [for
128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 9 ?2003, micron technology inc. mt9vddt1672h(i)] or a7?a12 [for mt9vddt3272h(i), mt18vdds6472h(i), mt9vddt6472h(i), and mt18vdds12872h(i)] specify the operating mode. burst length read and write accesses to the ddr sdram are burst oriented, with the burst length being program- mable, as shown in mode register diagram. the burst length determines the maximum number of column locations that can be accessed for a given read or write command. burst lengths of 2, 4, or 8 locations are available for both the sequential and the inter- leaved burst types. reserved states should not be used, as unknown operation or incompatibility with future versions may result. when a read or write command is issued, a block of columns equal to the burst length is effectively selected. all accesses for that burst take place within this block, meaning that the burst will wrap within the block if a boundary is reached. the block is uniquely selected by a1?a i when the burst length is set to two, by a2?a i when the burst length is set to four and by a3?a i when the burst length is set to eight (where a i is the most significant column address bit for a given configuration; see note 5 of table 6, burst definition table, on page 10). the remaining (least significant) address bit(s) is (are) used to select the starting loca- tion within the block. the programmed burst length applies to both read and write bursts. burst type accesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the burst type and is selected via bit m3. the ordering of accesses within a burst is deter- mined by the burst length, the burst type and the start- ing column address, as shown in table 6, burst definition table, on page 10. read latency the read latency is the delay, in clock cycles, between the registration of a read command and the availability of the first bit of output data. the latency can be set to 2 or 2.5 clocks, as shown in figure 6, cas latency diagram, on page 10. if a read command is registered at clock edge n , and the latency is m clocks, the data will be available nominally coincident with clock edge n + m . table 7, cas latency (cl) table, indicates the operating fre- quencies at which each cas latency setting can be used. reserved states should not be used as unknown operation or incompatibility with future versions may result. figure 5: mode register definition diagram m3 = 0 reserved 2 4 8 reserved reserved reserved reserved m3 = 1 reserved 2 4 8 reserved reserved reserved reserved operating mode normal operation normal operation/reset dll all other states reserved 0 1 - 0 0 - 0 0 - 0 0 - 0 0 - 0 0 - valid valid - 0 1 burst type sequential interleaved cas latency reserved reserved 2 reserved reserved reserved 2.5 reserved burst length m0 0 1 0 1 0 1 0 1 burst length cas latency bt 0* a9 a7 a6 a5 a4 a3 a8 a2 a1 a0 mode register (mx) address bus 976543 8210 m1 0 0 1 1 0 0 1 1 m2 0 0 0 0 1 1 1 1 m3 m4 0 1 0 1 0 1 0 1 m5 0 0 1 1 0 0 1 1 m6 0 0 0 0 1 1 1 1 m6-m0 m8 m7 operating mode a10 a12 a11 ba0 ba1 10 11 12 13 0* 14 * m14 and m13 (ba1 and ba0) must be ?0, 0? to select the base mode register (vs. the extended mode register). m9 m10 m12 m11 burst length cas latency bt 0* 0* a9 a7 a6 a5 a4 a3 a8 a2 a1 a0 mode register (mx) address bus 976543 8210 operating mode a10 a11 ba0 ba1 10 11 12 13 * m13 and m12 (ba1and ba0) must be ?0, 0? to select the base mode register (vs. the extended mode register). mt9vddt1672h module address bus mt9vddt3272h; mt18vddt6472h; mt9vdds6472h, mt18vdds12872h module address bus
128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 10 ?2003, micron technology inc. note: 1. for a burst length of two, a1?a i select the two-data- element block; a0 selects the first access within the block. 2. for a burst length of four, a2?a i select the four-data- element block; a0?a1 select the first access within the block. 3. for a burst length of eight, a3?a i select the eight-data- element block; a0?a2 select the first access within the block. 4. whenever a boundary of the block is reached within a given sequence above, the following access wraps within the block. 5. i = 9 for mt9vddt1672h, mt9vddt3272h, and mt18vdds6472h; i = 11 for mt9vddt6472h and mt18vdds12872h. operating mode the normal operating mode is selected by issuing a mode register set comman d with bits a7?a11 [for mt9vddt1672h(i)], or a7?a12 (for mt9vddt3272h(i), mt18vdds6472h(i), mt9vddt6472h(i), and mt18vdds12872h(i)] each set to zero, and bits a0?a6 set to the desired values. a dll reset is initiated by issuing a mode register set command with bits a7 and a9?a11 [for mt9vddt1672h(i)], or a7 and a9?a12 [for mt9vddt3272h(i), mt18vdds6472h(i), mt9vddt6472h(i), and mt18vdds12872h(i)] each set to zero, bit a8 set to one, and bits a0?a6 set to the desired values. although not required by the micron device, jedec specifica- tions recommend when a load mode register command is issued to reset the dll, it should always be followed by a load mode register command to select normal operating mode. all other combinations of values for a7?a11, or a7? a12 are reserved for future use and/or test modes. test modes and reserved states should not be used because unknown operation or incompatibility with future ver- sions may result. figure 6: cas latency diagram table 6: burst definition table burst length starting column address order of accesses within a burst type = sequential type = interleave d 2 a0 00-1 0-1 11-0 1-0 4 a1 a0 0 0 0-1-2-3 0-1-2-3 0 1 1-2-3-0 1-0-3-2 1 0 2-3-0-1 2-3-0-1 1 1 3-0-1-2 3-2-1-0 8 a2 a1 a0 0 0 0 0-1-2-3-4-5-6-7 0-1-2-3-4-5-6-7 0 0 1 1-2-3-4-5-6-7-0 1-0-3-2-5-4-7-6 0 1 0 2-3-4-5-6-7-0-1 2-3-0-1-6-7-4-5 0 1 1 3-4-5-6-7-0-1-2 3-2-1-0-7-6-5-4 1 0 0 4-5-6-7-0-1-2-3 4-5-6-7-0-1-2-3 1 0 1 5-6-7-0-1-2-3-4 5-4-7-6-1-0-3-2 1 1 0 6-7-0-1-2-3-4-5 6-7-4-5-2-3-0-1 1 1 1 7-0-1-2-3-4-5-6 7-6-5-4-3-2-1-0 table 7: cas latency (cl) table allowable operating clock frequency (mhz) speed cl = 2 cl = 2.5 -335 na 75 f 167 -26a 75 f 133 75 f 133 -265 75 f 100 75 f 133 -202 75 f 100 na ck ck# command dq dqs cl = 2 read nop nop nop read nop nop nop burst length = 4 in the cases shown shown with nominal t ac, t dqsck, and t dqsq ck ck# command dq dqs cl = 2.5 t0 t1 t2 t2n t3 t3n t0 t1 t2 t2n t3 t3n don?t care transitioning data
128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 11 ?2003, micron technology inc. extended mode register the extended mode register controls functions beyond those controlled by the mode register; these additional functions are dll enable/disable, output drive strength, and qfc#. these functions are con- trolled via the bits shown in figure 7, extended mode register definition diagram. the extended mode reg- ister is programmed via the load mode register command to the mode register (with ba0 = 1 and ba1 = 0) and will retain the stored information until it is programmed again or the device loses power. the enabling of the dll should always be followed by a load mode register command to the mode regis- ter (ba0/ba1 both low) to reset the dll. the extended mode register must be loaded when all device banks are idle and no bursts are in progress, and the controller must wait the specified time before initiating any subsequent operation. violating either of these requirements could result in unspecified oper- ation. dll enable/disable the dll must be enabled for normal operation. dll enable is required during power-up initialization and upon returning to normal operation after having disabled the dll for the purpose of debug or evalua- tion. (when the device exits self refresh mode, the dll is enabled automatically.) any time the dll is enabled, 200 clock cycles must occur before a read command can be issued. figure 7: extende d mode register definition diagram note: 1. e13 and e12 (mt9vddt1672h(i)), or e14 and e13 [mt9vddt3272h(i), mt18vdds6472h(i), mt9vddt6472h(i), and mt18vdds12872h(i)] (ba1 and ba0) must be ?0, 1? to select the extended mode regis- ter (vs. the base mode register). 2. the qfc# option is not supported. operating mode reserved reserved 0 ? 0 ? valid ? 0 1 dll enable disable dll 1 1 0 1 a9 a7 a6 a5 a4 a3 a8 a2 a1 a0 extended mode register (ex) address bus 976543 8210 e0 0 drive strength normal e1 e0 e1, operating mode a10 a11 a12 ba1 ba0 10 11 12 13 14 e3 e4 0 ? 0 ? 0 ? 0 ? 0 ? e6 e5 e7 e8 e9 0 ? 0 ? e10 e11 0 ? e12 ds dll 1 1 0 1 a9 a7 a6 a5 a4 a3 a8 a2 a1 a0 extended mode register (ex) address bus 976543 8210 operating mode a10 a11 ba1 ba0 10 11 12 13 ds mt9vddt1672h(i) module address bus mt9vddt3272h(i); mt9vddt6472h(i); mt18vdds6472h(i), mt18vdds12872h(i) module address bus 0 ? e2 2
128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 12 ?2003, micron technology inc. commands the truth tables below provides a general reference of available commands. for a more detailed descrip- tion of commands and operations, refer to the 128mb, 256mb, or 512mb ddr sdram and 512mb and 1gb ddr twindie component data sheets. note: 1. cke is high for all commands shown except self refresh. 2. deselect and nop are functionally interchangeable. 3. ba0?ba1 provide device bank address and a0?a11 [mt9vddt1672h(i)] or a0?a12 [mt9vddt3272h(i), mt18vdds6472h(i), mt9vddt6472h(i), and mt18vdds12872h(i)] provide row address. 4. ba0?ba1 provide device bank address; a0?a9 [mt9vddt1672h(i), mt9vddt3272h(i), and mt9vddt6472h(i)] or a0? a9,11 [mt18vdds6472h(i), mt18vdds12872h(i)], provide column address; a10 high enables the auto precharge fea- ture (nonpersistent), and a10 low disables the auto precharge feature. 5. applies only to read bursts with auto precharge disabled; th is command is undefined (and should not be used) for read bursts with auto precharge enabled and for write bursts. 6. a10 low: ba0?ba1 determine which device bank is precha rged. a10 high: all device banks are precharged and ba0- ba1 are ?don?t care.? 7. this command is auto refresh if cke is high, self refresh if cke is low. 8. internal refresh counter controls row addressing; all inputs and i/os are ?don?t care? except for cke. 9. ba0?ba1 select either the mode register or the extended mode register (ba0 = 0, ba1 = 0 select the mode register; ba0 = 1, ba1 = 0 select extended mode register; other combinat ions of ba0?ba1 are reserved). a0?a11 [mt9vddt1672h(i)] or a0?a12 [mt9vddt3272h(i), mt18vdds6472h(i), mt9vddt6472h(i), mt18vdds12872h(i)] provide the op-code to be written to the selected mode register. table 8: commands truth table note: 1 name (function) cs# ras# cas# we# address notes deselect (nop) hx xx x 2 no operation (nop) lh hh x 2 active (select bank and activate row) l l h h bank/row 3 read (select bank and column, and start read burst) l h l h bank/col 4 write (select bank and column, and start write burst) l h l l bank/col 4 burst terminate lh hl x 5 precharge (deactivate row in bank or banks) l l h l code 6 auto refresh or self refresh (enter self refresh mode) ll lh x 7, 8 load mode register l l l l op-code 9 table 9: dm operation truth table used to mask write data; provided coincident with the corresponding data. name (function) dm dqs write enable l valid write inhibit hx
128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 13 ?2003, micron technology inc. absolute maximum ratings stresses greater than those listed may cause perma- nent damage to the device. this is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the opera- tional sections of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect reliability. voltage on v dd supply relative to v ss . . . . . . . . . . . . . . . . . . . . . -1v to +3.6v voltage on v dd q supply relative to v ss . . . . . . . . . . . . . . . . . . . . -1v to +3.6v voltage on v ref and inputs relative to v ss . . . . . . . . . . . . . . . . . . . . -1v to +3.6v voltage on i/o pins relative to v ss . . . . . . . . . . . . . -0.5v to v dd q +0.5v operating temperature, t a (commercial). . . . . . . . . . . . . . . . . .. 0c to +70c t a (industrial). . . . . . . . . . . . . . . . . . . -40c to +85c storage temperature (plastic) . . . . . .-55c to +150c power dissipation single rank modules . . . . . . . . . . . . . . . . . . . . . . . 9w dual rank modules . . . . . . . . . . . . . . . . . . . . . . . 18w short circuit output current. . . . . . . . . . . . . . . 50ma table 10: dc electrical characteristics and operating conditions (mt9vddt1672h(i), mt9vddt3272h(i), mt9vddt6472h(i)) notes: 1?5, 14, 49; notes appear on pages 23?26; 0c t a +70c parameter/condition symbol min max units notes supply voltage v dd 2.3 2.7 v 32, 36 i/o supply voltage v dd q 2.3 2.7 v 32, 36, 39 i/o reference voltage v ref 0.49 x v dd q 0.51 x v dd q v6, 39 i/o termination voltage (system) v tt v ref - 0.04 v ref + 0.04 v 7, 39 input high (logic 1) voltage v ih (dc) v ref + 0.15 v dd + 0.3 v 25 input low (logic 0) voltage v il (dc) -0.3 v ref - 0.15 v 25 input leakage current any input 0v v in v dd , v ref pin 0v v in 1.35v (all other pins not under test = 0v) command/ address, ras#, cas#, we#, cke, s# i i -18 18 a 48 ck, ck# -6 6 dqs, dm -2 2 output leakage current (dqs are disabled; 0v vout vddq) dq i oz -5 5 a 48 output levels high current (v out = v dd q - 0.373v, minimum v ref , minimum v tt ) low current (v out = 0.373v, maximum v ref , maximum v tt ) i oh -16.8 ? ma 33, 34 i ol 16.8 ? ma
128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 14 ?2003, micron technology inc. table 11: dc electrical characteristics and operating conditions (mt18vdds6472h(i), mt18vdds12872h(i)) notes: 1?5, 14, 49; notes appear on pages 23?26; 0c t a +70c parameter/condition symbol min max units notes supply voltage v dd 2.3 2.7 v 32, 36 i/o supply voltage v dd q 2.3 2.7 v 32, 36, 39 i/o reference voltage v ref 0.49 x v dd q 0.51 x v dd q v6, 39 i/o termination voltage (system) v tt v ref - 0.04 v ref + 0.04 v7, 39 input high (logic 1) voltage v ih (dc) v ref + 0.15 v dd + 0.3 v 25 input low (logic 0) voltage v il (dc) -0.3 v ref - 0.15 v 25 input leakage current any input 0v v in v dd , v ref pin 0v v in 1.35v (all other pins not under test = 0v) command/ address, ras#, cas#, we#, i i -36 36 a 48 cke0, cke1, s0#, s1# 18 18 ck, ck# -12 12 dqs, dm -4 4 output leakage current (dqs are disabled; 0v v out v dd q) dq i oz -10 10 a 48 output levels high current (v out = v dd q - 0.373v, minimum v ref , minimum v tt ) low current (v out = 0.373v, maximum v ref , maximum v tt ) i oh -16.8 ? ma 33, 34 i ol 16.8 ? ma table 12: ac input operating conditions notes: 1?5,14, 16, 49; notes appear on pages 23?26; 0c t a +70c; v dd = v dd q = +2.5v 0.2v parameter/condition symbol min max units notes input high (logic 1) voltage v ih ( ac )v ref + 0.310 ? v 12, 25, 35 input low (logic 0) voltage v il ( ac )?v ref - 0.310 v 12, 25, 35 i/o reference voltage v ref ( ac )0.49 x v dd q 0.51 x v dd qv 6
128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 15 ?2003, micron technology inc. ta bl e 1 3 : i dd specifications and conditions (mt9vddt1672h(i)) ddr sdram components only notes: 1?5, 8, 10, 12, 49; notes appear on pages 23?26; 0c t a +70c; v dd = v dd q = +2.5v 0.2v max parameter/condition symbol -335 -26a/-265 -202 units notes operating current: one device bank; active-precharge; t rc = t rc (min); t ck = t ck (min); dq, dm and dqs inputs changing once per clock cyle; address and control inputs changing once every two clock cycles i dd0 tbd 945 900 ma 20, 43 operating current: one device bank; active -read precharge; burst = 2; t rc = t rc (min); t ck = t ck (min); i out = 0ma; address and control inputs changing once per clock cycle i dd1 tbd 1,080 990 ma 20, 43 precharge power-down standby current: all device banks idle; power-down mode; t ck = t ck (min); cke = (low) i dd2p tbd 27 27 ma 21, 28,45 idle standby current: cs# = high; all device banks idle; t ck = t ck min; cke = high; address and other control inputs changing once per clock cycle. v in = v ref for dq, dqs, and dm i dd2f tbd 405 315 ma 46 active power-down standby current: one device bank active; power-down mode; t ck = t ck (min); cke = low i dd3p tbd 180 180 ma 21, 28, 45 active standby current: cs# = high; cke = high; one device bank; active-precharge; t rc = t ras (max); t ck = t ck (min); dq, dm anddqs inputs changing twice per clock cycle; address and other control inputs changing once per clock cycle i dd3n tbd 405 315 ma 42 operating current: burst = 2; reads; continuous burst; one bank active; address and control inputs changing once per clock cycle; t ck = t ck (min); i out = 0ma i dd4r tbd 1,125 945 ma 20, 43 operating current: burst = 2; writes; continuous burst; one device bank active; address and control inputs changing once per clock cycle; t ck = t ck (min); dq, dm, and dqs inputs changing twice per clock cycle i dd4w tbd 1,035 945 ma 20 auto refresh current t rc = t rc (min) i dd5 tbd 1,890 1,845 ma 20, 45 t rc = 15.625s i dd5a tbd 45 45 ma 24, 45 self refresh current: cke 0.2v i dd6 tbd 18 18 ma 9 operating current: four device bank interleaving reads (bl = 4) with auto precharge, t rc = t rc (min); t ck = t ck (min); address and control inputs change only during active read, or write commands i dd7 tbd 2,925 2,475 ma 20, 44
128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 16 ?2003, micron technology inc. ta bl e 1 4 : i dd specifications and conditions (mt9vddt3272h(i)) ddr sdram components only notes: 1?5, 8, 10, 12, 49; notes appear on pages 23?26; 0c t a +70c; v dd = v dd q = +2.5v 0.2v max parameter/condition symbol -335 -26a/-265 -202 units notes operating current: one device bank; active- precharge; t rc = t rc (min); t ck = t ck (min); dq, dm and dqs inputs changing once per clock cyle; address and control inputs changing once every two clock cycles i dd0 tbd 1,080 1,035 ma 20, 43 operating current: one device bank; active -read precharge; burst = 2; t rc = t rc (min); t ck = t ck (min); i out = 0ma; address and control inputs changing once per clock cycle i dd1 tbd 1,260 1,125 ma 20, 43 precharge power-down standby current: all device banks idle; power-down mode; t ck = t ck (min); cke = (low) i dd2p tbd 36 36 ma 21,28, 45 idle standby current: cs# = high; all device banks idle; t ck = t ck min; cke = high; address and other control inputs changing once per clock cycle. v in = v ref for dq, dqs, and dm i dd2f tbd 360 360 ma 46 active power-down standby current: one device bank active; power-down mode; t ck = t ck (min); cke = low i dd3p tbd 270 225 ma 21, 28 , 45 active standby current: cs# = high; cke = high; one device bank; active-precharge; t rc = t ras (max); t ck = t ck (min); dq, dm anddqs inputs changing twice per clock cycle; address and other control inputs changing once per clock cycle i dd3n tbd 405 360 ma 42 operating current: burst = 2; reads; continuous burst; one bank active; address and control inputs changing once per clock cycle; t ck = t ck (min); i out = 0ma i dd4r tbd 1,620 1,350 ma 20, 43 operating current: burst = 2; writes; continuous burst; one device bank active; address and control inputs changing once per clock cycle; t ck = t ck (min); dq, dm, and dqs inputs changing twice per clock cycle i dd4w tbd 1,710 1,440 ma 20 auto refresh current t rc = t rc(min) i dd5 tbd 2,205 1,935 ma 20,45 t rc = 7.8125s i dd5a tbd 54 54 ma 24, 45 self refresh current: cke 0.2v i dd6 tbd 36 45 ma 9 operating current: four device bank interleaving reads (bl = 4) with auto precharge, t rc = t rc (min); t ck = t ck (min); address and control inputs change only during active read, or write commands i dd7 tbd 3,285 3,150 ma 20, 44
128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 17 ?2003, micron technology inc. ta bl e 1 5 : i dd specifications and conditions (mt9vddt6472h(i)) ddr sdram components only notes: 1?5, 8, 10, 12, 49; notes appear on pages 23?26; 0c t a +70c; v dd = v dd q = +2.5v 0.2v max parameter/condition symbol -335 -26a/-265 -202 units notes operating current: one device bank; active-precharge; t rc = t rc (min); t ck = t ck (min); dq, dm and dqs inputs changing once per clock cyle; address and control inputs changing once every two clock cycles i dd0 tbd 1,305 1,170 ma 20, 43 operating current: one device bank; active -read precharge; burst = 2; t rc = t rc (min); t ck = t ck (min); i out = 0ma; address and control inputs changing once per clock cycle i dd1 tbd 1,440 1,305 ma 20, 43 precharge power-down standby current: all device banks idle; power-down mode; t ck = t ck (min); cke = (low) i dd2p tbd 54 54 ma 21, 28, 45 idle standby current: cs# = high; all device banks idle; t ck = t ck min; cke = high; address and other control inputs changing once per clock cycle. v in = v ref for dq, dqs, and dm i dd2f tbd 315 315 ma 46 active power-down standby current: one device bank active; power-down mode; t ck = t ck (min); cke = low i dd3p tbd 225 225 ma 21,28, 45 active standby current: cs# = high; cke = high; one device bank; active-precharge; t rc = t ras (max); t ck = t ck (min); dq, dm anddqs inputs changing twice per clock cycle; address and other control inputs changing once per clock cycle i dd3n tbd 405 315 ma 42 operating current: burst = 2; reads; continuous burst; one bank active; address and control inputs changing once per clock cycle; t ck = t ck (min); i out = 0ma i dd4r tbd 1,800 1,485 ma 20, 43 operating current: burst = 2; writes; continuous burst; one device bank active; address and control inputs changing once per clock cycle; t ck = t ck (min); dq, dm, and dqs inputs changing twice per clock cycle i dd4w tbd 1,845 1,575 ma 20 auto refresh current t rc = t rc(min) i dd5 tbd 3,015 2,835 ma 20, 45 t rc = 7.8125s i dd5a tbd 90 90 ma 24, 45 self refresh current: cke 0.2v i dd6 tbd 63 63 ma 9 operating current: four device bank interleaving reads (bl = 4) with auto precharge, t rc = t rc (min); t ck = t ck (min); address and control inputs change only during active read, or write commands i dd7 tbd 4,050 3,825 ma 20, 44
128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 18 ?2003, micron technology inc. ta bl e 1 6 : i dd specifications and co nditions (mt18vdds6472h(i)) ddr sdram components only notes: 1?5, 8, 10, 12, 49; notes appear on pages 23?26; 0c t a +70c; v dd = v dd q = +2.5v 0.2v max parameter/condition symbol -26a/-265 -202 units notes operating current: (i dd0 condition) one device bank; active- precharge; t rc = t rc (min); t ck = t ck (min); dq, dm and dqs inputs changing once per clock cyle; address and control inputs changing once every two clock cycles i dd0 a tbd tbd ma 20, 43 operating current: (i dd1 condtion) one device bank; active-read- precharge; burst = 2; t rc = t rc (min); t ck = t ck (min)); i out = 0ma; address and control inputs changing once per clock cycle i dd1 a tbd tbd ma 20, 43 precharge power-down standby current: (i dd2p condition) all device banks idle; power-down mode; t ck = t ck (min); cke = (low) i dd2p b tbd tbd ma 21, 28, 45 idle standby current: (i dd2f condition) cs# = high; all device banks are idle; t ck = t ck (min); cke = high; address and other control inputs changing once per clock cycle. v in = v ref for dq, dqs, and dm i dd2f b tbd tbd ma 46 active power-down standby current: (i dd3p condition) one device bank active; power-down mode; t ck = t ck (min); cke = low i dd3p b tbd tbd ma 21, 28, 45 active standby current: (i dd3n condtion) cs# = high; cke = high; one device bank active; t rc = t ras (max); t ck = t ck (min); dq, dm and dqs inputs changing twice per clock cycle; address and other control inputs changing once per clock cycle i dd3n c tbd tbd ma 42 operating current: (i dd4r condition) burst = 2; reads; continuous burst; one device bank active; address and control inputs changing once per clock cycle; t ck = t ck (min); i out = 0ma i dd4r a tbd tbd ma 20,43 operating current: (i dd4w condtion) burst = 2; writes; continuous burst; one device bank active; address and control inputs changing once per clock cycle; t ck = t ck (min); dq, dm, and dqs inputs changing twice per clock cycle i dd4w a tbd tbd ma 20 auto refresh burst current: an auto refresh command is given to one module rank, and on the next clock cycle the second module rank recieves an auto refresh command. cke = high t rc = t rc(min) i dd5 b tbd tbd ma 20, 45 auto refresh distrubuted current: an auto refresh command is given to one module rank, and on the next clock cycle the second module rank recieves an auto refresh command; cke = low for t rfc time t rc = 7.8125s i dd5a b tbd tbd ma 24, 45 self refresh current: both module rank are in i dd 6 condition, cke 0.2v i dd6 b tbd tbd ma 9 operating current: one module rank in i dd7 condtion, one module rank in i dd3n condition. (i dd7 condtion) four device bank interleaving reads (bl=4) with auto precharge, t rc = t rc (min); t ck = t t ck (min); address and control inputs change only during active read, or write commands. i dd7 a tbd tbd ma 20,44 note: a - value calculated as one module rank in this operating condition, and all other module ranks in i dd 2 p (cke low) mode. b - value calculated reflects all module ranks in this operating condition. c - value calculated as one module rank in this operating condition, and all other module ranks in i dd3n.
128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 19 ?2003, micron technology inc. ta bl e 1 7 : i dd specifications and co nditions (mt18vdds12872h(i)) ddr sdram components only notes: 1?5, 8, 10,12, 49; notes appear on pages 23?26; 0c t a +70c; v dd = v dd q = +2.5v 0.2v max parameter/condition symbol -26a/-265 -202 units notes operating current: (i dd0 condition) one device bank; active- precharge; t rc = t rc (min); t ck = t ck (min); dq, dm and dqs inputs changing once per clock cyle; address and control inputs changing once every two clock cycles i dd0 a tbd tbd ma 20, 43 operating current: (i dd1 condtion) one device bank; active-read- precharge; burst = 2; t rc = t rc (min); t ck = t ck (min)); i out = 0ma; address and control inputs changing once per clock cycle i dd1 a tbd tbd ma 20, 43 precharge power-down standby current: (i dd2p condition) all device banks idle; power-down mode; t ck = t ck (min); cke = (low) i dd2p b tbd tbd ma 21, 28, 45 idle standby current: (i dd2f condition) cs# = high; all device banks are idle; t ck = t ck (min); cke = high; address and other control inputs changing once per clock cycle. v in = v ref for dq, dqs, and dm i dd2f b tbd tbd ma 46 active power-down standby current: (i dd3p condition) one device bank active; power-down mode; t ck = t ck (min); cke = low i dd3p b tbd tbd ma 21, 28, 45 active standby current: (i dd3n condtion) cs# = high; cke = high; one device bank active; t rc = t ras (max); t ck = t ck (min); dq, dm and dqs inputs changing twice per clock cycle; address and other control inputs changing once per clock cycle i dd3n c tbd tbd ma 42 operating current: (i dd4r condition) burst = 2; reads; continuous burst; one device bank active; address and control inputs changing once per clock cycle; t ck = t ck (min); i out = 0ma i dd4r a tbd tbd ma 20, 43 operating current: (i dd4w condtion) burst = 2; writes; continuous burst; one device bank active; address and control inputs changing once per clock cycle; t ck = t ck (min); dq, dm, and dqs inputs changing twice per clock cycle i dd4w a tbd tbd ma 20 auto refresh burst current: an auto refresh command is given to one module rank, and on the next clock cycle the second module rank recieves an auto refresh command. cke = high t rc = t rc(min) i dd5 b tbd tbd ma 20, 45 auto refresh distrubuted current: an auto refresh command is given to one module rank, and on the next clock cycle the second module rank recieves an auto refresh command; cke = low for t rfc time t rc = 7.8125s i dd5a b tbd tbd ma 24, 45 self refresh current: both module rank are in i dd 6 condition, cke 0.2v i dd6 b tbd tbd ma 9 operating current: one module rank in i dd7 condtion, one module rank in i dd3n condition. (i dd7 condtion) four device bank interleaving reads (bl=4) with auto precharge, t rc = t rc (min); t ck = t t ck (min); address and control inputs change only during active read, or write commands. i dd7 a tbd tbd ma 20,44 note: a - value calculated as one module rank in this operating condition, and all other module ranks in i dd 2 p (cke low) mode. b - value calculated reflects all module ranks in this operating condition. c - value calculated as one module rank in this operating condition, and all other module ranks in i dd3n.
128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 20 ?2003, micron technology inc. table 18: capacitance (mt9vddt1672h(i), mt9vddt3272h(i), mt9vddt6472h(i)) note: 11; notes appear on pages 23?26 parameter symbol min max units input/output capacitance: dq, dqs, dm c io 45 pf input capacitance: command and address c i1 18 27 pf input capacitance: s# c i2 18 27 pf input capacitance:ck, ck# c i3 912 pf input capacitance: cke c i4 18 27 pf table 19: capacitance (mt18vdds6472h(i), mt18vdds12872h(i)) note: 11; notes appear on pages 23?26 parameter symbol min max units input/output capacitance: dq, dqs, dm c io 810 pf input capacitance: command and address c i1 36 54 pf input capacitance: s# c i2 18 27 pf input capacitance:ck, ck# c i3 15 21 pf input capacitance: cke c i4 18 27 pf
128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 21 ?2003, micron technology inc. table 20: ddr sdram component electrica l characteristics and recommended ac operating conditions notes: 1?5, 12-15, 29, 49; notes appear on pages 23?26; 0c t a +70c; v dd = v dd q = +2.5v 0.2v ac characteristics -335 -26a/-265 -202 parameter symbol min max min max min max units notes access window of dqs from ck/ ck# t ac -0.7 +0.7 -0.75 0.75 -0.8 0.8 ns ck high-level width t ch 0.45 0.55 0.45 0.55 0.45 0.55 t ck 26 ck low-level width t cl 0.45 0.55 0.45 0.55 0.45 0.55 t ck 26 clock cycle time cl=2.5 t ck (2.5) 6 13 7.5 13 8 13 ns 40, 47 cl=2 t ck (2) 7.5 13 7.5/10 13 10 13 ns 40, 47 dq and dm input hold time relative to dqs t dh 0.45 0.5 0.6 ns 23, 27 dq and dm input setup time relative to dqs t ds 0.45 0.5 0.6 ns 23, 27 dq and dm input pulse width (for each input) t dipw 1.75 1.75 2 ns 27 access window of dqs from ck/ck# t dqsck -0.60 +0.60 -0.75 +0.75 -0.8 +0.8 ns dqs input high pulse width t dqsh 0.35 0.35 0.35 t ck dqs input low pulse width t dqsl 0.35 0.35 0.35 t ck dqs-dq skew, dqs to last dq valid, per group, per access t dqsq 0.45 0.5 0.6 ns 22, 23 write command to first dqs latching transition t dqss 0.75 1.25 0.75 1.25 0.75 1.25 t ck dqs falling edge to ck rising - setup time t dss 0.2 0.2 0.2 t ck dqs falling edge from ck rising - hold time t dsh 0.2 0.2 0.2 t ck half clock period t hp t ch, t cl t ch, t cl t ch, t cl ns 30 data-out high-impedance window from ck/ck# t hz +0.70 +0.75 +0.8 ns 16, 37 data-out low-impedance window from ck/ck# t lz -0.70 -0.75 -0.8 ns 16, 38 address and control input hold time (fast slew rate) t ih f .75 .90 1.1 ns 12 address and control input setup time (fast slew rate) t is f .75 .90 1.1 ns 12 address and control input hold time (slow slew rate) t ih s .80 1 1.1 ns 12 address and control input setup time (slow slew rate) t is s .80 1 1.1 ns 12 load mode register command cycle time t mrd 12 15 16 ns dq-dqs hold, dqs to first dq to go non-valid, per access t qh t hp - t qhs t hp - t qhs t hp - t qhs ns 22, 23 data hold skew factor t qhs 0.60 0.75 1 ns active to precharge command t ras 42 70,000 40 120,000 40 120,000 ns 31 active to read with auto precharge command mt9vddt1672h t rap 18 t ras(min) - (burst length * t ck/2) ns 41 active to read with auto precharge command all others t rap 18 20 20 ns active to active/auto refresh command period t rc 60 65 70 ns auto refresh command period t rfc 72 75 80 ns 45 active to read or write delay t rcd 18 20 20 ns precharge command period t rp 18 20 20 ns dqs read preamble t rpre 0.9 1.1 0.9 1.1 0.9 1.1 t ck 37 dqs read postamble t rpst 0.4 0.6 0.4 0.6 0.4 0.6 t ck active bank a to active bank b command t rrd 12 15 15 ns dqs write preamble t wpre 0.25 0.25 0.25 t ck dqs write preamble setup time t wpres 0 0 0 ns 18, 19
128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 22 ?2003, micron technology inc. dqs write postamble t wpst 0.4 0.6 0.4 0.6 0.4 0.6 t ck 17 write recovery time t wr 15 15 15 ns internal write to read command delay t wtr 1 1 1 t ck data valid output window na t qh - t dqsq t qh - t dqsq t qh - t dqsq ns 22 refresh to refresh command interval mt9vddt1672h t refc 140.6 140.6 140.6 s 21 refresh to refresh command interval all others t refc 70.3 70.3 70.3 s 21 average periodic refresh interval mt9vddt1672h t refi 15.6 15.6 15.6 s 21 average periodic refresh interval all others t refi 7.8 7.8 7.8 s 21 terminating voltage delay to v dd t vtd 0 0 0 ns exit self refresh to non-read command t xsnr 75 75 80 ns exit self refresh to read command t xsrd 200 200 200 t ck table 20: ddr sdram component electrica l characteristics and recommended ac operating conditions (continued) notes: 1?5, 12-15, 29, 49; notes appear on pages 23?26; 0c t a +70c; v dd = v dd q = +2.5v 0.2v ac characteristics -335 -26a/-265 -202 parameter symbol min max min max min max units notes
128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 23 ?2003, micron technology inc. notes 1. all voltages referenced to v ss . 2. tests for ac timing, i dd , and electrical ac and dc characteristics may be conducted at nominal ref- erence/supply voltage levels, but the related spec- ifications and device operation are guaranteed for the full voltage range specified. 3. outputs measured with equivalent load: 4. ac timing and i dd tests may use a v il -to-v ih swing of up to 1.5v in the test environment, but input timing is still referenced to v ref (or to the crossing point for ck/ck#), and parameter speci- fications are guaranteed for the specified ac input levels under normal use conditions. the mini- mum slew rate for the input signals used to test the device is 1v/ns in the range between v il ( ac ) and v ih ( ac ). 5. the ac and dc input level specifications are as defined in the sstl_2 standard (i.e., the receiver will effectively switch as a result of the signal crossing the ac input level, and will remain in that state as long as the signal does not ring back above [below] the dc input low [high] level). 6. v ref is expected to equal v dd q/2 of the transmit- ting device and to track variations in the dc level of the same. peak-to-peak noise (non-common mode) on v ref may not exceed 2 percent of the dc value. thus, from v dd q/2, v ref is allowed 25mv for dc error and an additional 25mv for ac noise. this measurement is to be taken at the nearest v ref by-pass capacitor. 7. v tt is not applied directly to the device. v tt is a system supply for signal termination resistors, is expected to be set equal to v ref and must track variations in the dc level of v ref . 8. i dd is dependent on output loading and cycle rates. specified values are obtained with mini- mum cycle time at cl = 2 for -26a and -202, cl = 2.5 for -265 and -335 with the outputs open. 9. enables on-chip refresh and address counters. 10. i dd specifications are tested after the device is properly initialized, and is averaged at the defined cycle rate. 11. this parameter is sampled. v dd = +2.5v 0.2v, v dd q = +2.5v 0.2v, v ref = v ss , f = 100 mhz, t a = 25c, v out (dc) = v dd q/2, v out (peak to peak) = 0.2v. dm input is grouped with i/o pins, reflecting the fact that they are matched in loading. 12. command/address input slew rate = 0.5v/ns. for -335 and -265with slew rates 1v/ns and faster, t is and t ih are reduced to 900ps. if the slew rate is less than 0.5v/ ns, timing must be derated: t is has an additional 50ps per each 100mv/ns reduction in slew rate from the 500mv/ns. t ih has 0ps added, that is, it remains constant. if the slew rate exceeds 4.5v/ns, functionality is uncertain. 13. the ck/ck# input reference level (for timing ref- erenced to ck/ck#) is the point at which ck and ck# cross; the input reference level for signals other than ck/ck# is v ref . 14. inputs are not recognized as valid until v ref stabi- lizes. exception: during the period before v ref stabilizes, cke 0.3 x v dd q is recognized as low. 15. the output timing reference level, as measured at the timing reference point indicated in note 3, is v tt . 16. t hz and t lz transitions occur in the same access time windows as valid data transitions. these parameters are not referenced to a specific voltage level, but specify when the device output is no longer driving (hz) or begins driving (lz). 17. the maximum limit for this parameter is not a device limit. the device will operate with a greater value for this parameter, but system performance (bus turnaround) will degrade accordingly. 18. this is not a device limit. the device will operate with a negative value, but system performance could be degraded due to bus turnaround. 19. it is recommended that dqs be valid (high or low) on or before the write command. the case shown (dqs going from high-z to logic low ) applies when no writes were previously in progress on the bus. if a previous write was in progress, dqs could be high during this time, depending on t dqss. 20. min ( t rc or t rfc) for i dd measurements is the smallest multiple of t ck that meets the minimum absolute value for the respective parameter. t ras (max) for i dd measurements is the largest multi- ple of t ck that meets the maximum absolute value for t ras. output (v out ) reference point 50 ? v tt 30pf
128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 24 ?2003, micron technology inc. 21. the refresh period 64ms. this equates to an aver- age refresh rate of 15.625s (mt9vddt1672h) or 7.8125s (mt9vddt3272h, mt18vdds6472h, mt9vddt6472h, and mt18vdds12872h). how- ever, an auto refresh command must be as- serted at least once every 140.6s (mt9vddt1672h) or 70.3s (mt9vddt3272h, mt18vdds6472h, mt9vddt6472h, and mt18vdds12872h); burst refreshing or posting by the dram controller greater than eight refresh cycles is not allowed. 22. the valid data window is derived by achieving other specifications - t hp ( t ck/2), t dqsq, and t qh ( t qh = t hp - t qhs). the data valid window derates directly porportional with the clock duty cycle and a practical data valid window can be derived. the clock is allowed a maximum duty cycle variation of 45/55. functionality is uncertain when operating beyond a 45/55 ratio. the data valid window derating curves are provided below for duty cycles ranging between 50/50 and 45/55. the derating data valid window figure is shown below. 23. each byte lane has a dedicated dqs, with compo- nents, dq0?dq7. 24. this limit is actually a nominal value and does not result in a fail value. cke is high during refresh command period ( t rfc [min]) else cke is low (i.e., during standby). 25. to maintain a valid level, the transitioning edge of the input must: a. sustain a constant slew rate from the current ac level through to the target ac level, v il ( ac ) or v ih ( ac ). b. reach at least the target ac level. c. after the ac target level is reached, continue to maintain at least the target dc level, v il ( dc ) or v ih ( dc ). 26. jedec specifies ck and ck# input slew rate must be 1v/ns (2v/ns differentially). 27. dq and dm input slew rates must not deviate from dqs by more than 10 percent. if the dq/ dm/dqs slew rate is less than 0.5v/ns, timing must be derated: 50ps must be added to t ds and t dh for each 100mv/ns reduction in slew rate. if slew rate exceeds 4v/ns, functionality is uncer- tain. 28. v dd must not vary more than 4 percent if cke is not active while any bank is active. figure 8: derating data valid window ( t qh ? t dqsq) 3.750 3.700 3.650 3.600 3.550 3.500 3.450 3.400 3.350 3.300 3.250 3.400 3.350 3.300 3.250 3.200 3.150 3.100 3.050 3.000 2.950 2.900 2.500 2.463 2.425 2.388 2.350 2.313 2.275 2.238 2.200 2.163 2.125 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 50/50 49.5/50.5 49/51 48.5/52.5 48/52 47.5/53.5 47/53 46.5/54.5 46/54 45.5/55.5 45/55 clock duty cycle ns -26a/-265 @ t ck = 10ns -202 @ t ck = 10ns -26a/-265 @ t ck = 7.5ns -202 @ t ck = 8ns -335 @ t ck = 6ns tbd
128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 25 ?2003, micron technology inc. 29. the clock is allowed up to 150ps of jitter. each timing parameter is allowed to vary by the same amount. 30. t hp min is the lesser of t cl minimum and t ch minimum actually applied to the device ck and ck/ inputs, collectively during bank active. 31. reads and writes with auto precharge are not allowed to be issued until t ras(min) can be satis- fied prior to the internal precharge command being issued. 32. any positive glitch in the nominal voltage must be less than 1/3 of the clock and not more than +400mv or 2.9v maximum, whichever is less. any negative glitch must be less than 1/3 of the clock cycle and not exceed eith er -300mv or 2.2v mini- mum, whichever is more positive. 33. normal output drive curves: a. the full variation in driver pull-down current from minimum to maximum process, temper- ature and voltage will lie within the outer bounding lines of the v-i curve of figure 9, pull-down characteristics. b. the variation in driver pull-down current within nominal limits of voltage and tempera- ture is expected, but not guaranteed, to lie within the inner bounding lines of the v-i curve of figure 9, pull-down characteristics. c. the full variation in driver pull-up current from minimum to maximum process, temper- ature and voltage will lie within the outer bounding lines of the v-i curve of figure 10, pull-up characteristics. d. the variation in driver pull-up current within nominal limits of voltage and temperature is expected, but not guaranteed, to lie within the inner bounding lines of the v-i curve of figure 10, pull-up characteristics. e. the full variation in the ratio of the maximum to minimum pull-up and pull-down current should be between .71 and 1.4, for device drain-to-source voltages from 0.1v to 1.0v, and at the same voltage and temperature. f. the full variation in the ratio of the nominal pull-up to pull-down current should be unity 10 percent, for device drain-to-source volt- ages from 0.1v to 1.0v. 34. the voltage levels used are derived from a mini- mum v dd level and the referenced test load. in practice, the voltage levels obtained from a prop- erly terminated bus will provide significantly dif- ferent voltage values. 35. v ih overshoot: v ih (max) = v dd q + 1.5v for a pulse width 3ns and the pulse width can not be greater than 1/3 of the cycle rate. v il undershoot: v il (min) = -1.5v for a pulse width 3ns and the pulse width can not be greater than 1/3 of the cycle rate. 36. v dd and v dd q must track each other. 37. this maximum value is derived from the refer- enced test load. in practice, the values obtained in a typical terminated design may reflect up to 310ps less for t hz (max) and the last dvw. t hz (max) will prevail over t dqsck (max) + t rpst (max) condition. t lz (min) will prevail over t dqsck (min) + t rpre (max) condition. 38. for slew rates greater than 1v/ns the (lz) transi- tion will start about 310ps earlier. 39. during initialization, v dd q, v tt , and v ref must be equal to or less than v dd + 0.3v. alternatively, v tt may be 1.35v maximum during power up, even if v dd /v dd q are 0v, provided a minimum of 42 of series resistance is used between the v tt supply and the input pin. figure 9: pull-down characteristics figure 10: pull-up characteristics 160 140 i out (ma) v out (v) nominal low minimum nominal high maximum 120 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 v out (v) 0 -20 i out (ma) nominal low minimum nominal high maximum -40 -60 -80 -100 -120 -140 -160 -180 -200 0.0 0.5 1.0 1.5 2.0 2.5 v dd q - v out (v)
128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 26 ?2003, micron technology inc. 40. the current micron part operates below the slow- est jedec operating frequency of 83 mhz. as such, future die may not reflect this option. 41. t rap t rcd. 42. for the -335, -265, and -26a, i dd 3n is specified to be 35ma at 100 mhz. 43. random addressing changing and 50 percent of data changing at every transfer. 44. random addressing changing and 100 percent of data changing at every transfer. 45. cke must be active (high) during the entire time a refresh command is executed. that is, from the time the auto refresh command is registered, cke must be active at each rising clock edge, until t ref later. 46. i dd 2n specifies the dq, dqs, and dm to be driven to a valid high or low logic level. i dd 2q is similar to i dd 2f except i dd 2q specifies the address and control inputs to remain stable. although i dd 2f, i dd 2n, and i dd 2q are similar, i dd 2f is ?worst case.? 47. whenever the operating frequency is altered, not including jitter, the dll is required to be reset. this is followed by 200 clock cycles (before read commands). 48. leakage number reflects the worst case leakage possible through the module pin, not what each memory device contributes. 49. the -335 module speed grade, using the -6r speed device, has v dd (min) = 2.4v.
128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 27 ?2003, micron technology inc. spd clock and data conventions data states on the sda line can change only during scl low. sda state changes during scl high are reserved for indicating start and stop conditions (as shown in figure 11, data validity, and figure 12, defi- nition of start and stop). spd start condition all commands are preceded by the start condition, which is a high-to-low transition of sda when scl is high. the spd device continuously monitors the sda and scl lines for the start condition and will not respond to any command until this condition has been met. spd stop condition all communications are terminated by a stop condi- tion, which is a low-to-high transition of sda when scl is high. the stop condition is also used to place the spd device into standby power mode. spd acknowledge acknowledge is a software convention used to indi- cate successful data transfers. the transmitting device, either master or slave, will release the bus after trans- mitting eight bits. during the ninth clock cycle, the receiver will pull the sda line low to acknowledge that it received the eight bits of data (as shown in fig- ure 13, acknowledge response from receiver). the spd device will always respond with an acknowledge after recognition of a start condition and its slave address. if both the device and a write oper- ation have been selected, the spd device will respond with an acknowledge after the receipt of each subse- quent eight-bit word. in the read mode the spd device will transmit eight bits of data, release the sda line and monitor the line for an acknowledge. if an acknowl- edge is detected and no stop condition is generated by the master, the slave will continue to transmit data. if an acknowledge is not detected, the slave will termi- nate further data transmissions and await the stop condition to return to standby power mode. figure 11: data validity figure 12: definition of start and stop figure 13: acknowledge response from receiver scl sda data stable data stable data change scl sda start bit stop bit scl from master data output from transmitter data output from receiver 9 8 acknowledge
128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 28 ?2003, micron technology inc. table 21: eeprom device select code most significant bit (b7) is sent first select code device type identifier chip enable rw b7 b6 b5 b4 b3 b2 b1 b0 memory area select code (two arrays) 1 0 1 0 sa2 sa1 sa0 rw protection register select code 0 1 1 0 sa2 sa1 sa0 rw table 22: eeprom operating modes mode rw bit wc bytes initial sequence current address read 1v ih or v il 1 start, device select, rw = ?1? random address read 0v ih or v il 1 start, device select, rw = ?0?, address 1v ih or v il 1 restart, device select, rw = ?1? sequential read 1v ih or v il 1 similar to current or random address read byte write 0v il 1 start, device select, rw = ?0? page write 0v il 16 start, device select, rw = ?0? table 23: serial presence-detect eeprom dc operating conditions all voltages referenced to v ss ; v ddspd = +2.3v to +3.6v parameter/condition symbol min max units supply voltage v ddspd 2.3 3.6 v input high voltage: logic 1; all inputs v ih v dd x 0.7 v dd + 0.5 v input low voltage: logic 0; all inputs v il -1 v dd x 0.3 v output low voltage: i out = 3ma v ol ?0.4 v input leakage current: v in = gnd to v dd i li ?10a output leakage current: v out = gnd to v dd i lo ?10a standby current: scl = sda = v dd - 0.3v; all other inputs = v ss or v dd i sb ?30a power supply current: scl clock frequency = 100 khz i cc ?2ma
128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 29 ?2003, micron technology inc. figure 14: spd eeprom timing diagram note: 1. the spd eeprom write cycle time ( t wrc) is the time from a valid stop condition of a write sequence to the end of the eeprom internal erase/program cycle. during the write cycle, the eeprom bus interface circuit is disabled, sda remains high due to pull-up resistor, and the eeprom does not respond to its slave address. scl sda in sda out t low t su:sta t hd:sta t f t high t r t buf t dh t aa t su:sto t su:dat t hd:dat undefined table 24: serial presence-detect eeprom ac operating conditions all voltages referenced to v ss ; v ddspd = +2.3v to +3.6v parameter/condition symbol min max units notes scl low to sda data-out valid t aa 0.3 3.5 s time the bus must be free before a new transition can start t buf 4.7 s data-out hold time t dh 300 ns sda and scl fall time t f 300 ns data-in hold time t hd:dat 0 s start condition hold time t hd:sta 4 s clock high period t high 4 s noise suppression time constant at scl, sda inputs t i 100 ns clock low period t low 4.7 s sda and scl rise time t r1s scl clock frequency t scl 100 khz data-in setup time t su:dat 250 ns start condition setup time t su:sta 4.7 s stop condition setup time t su:sto 4.7 s write cycle time t wrc 10 ms 1
128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 30 ?2003, micron technology inc. table 25: serial presence-detect matrix (mt9vddt1672h(i), mt9vddt3272h(i), mt9vddt6472h(i)) ?1?/?0?: serial data, ?driven to high?/?driven to low? byte description entry (version) mt9vddt1672h mt9vddt3272h mt9vddt6472h 0 number of spd bytes used by micron 128 808080 1 total number of bytes in spd device 256 080808 2 fundamental memory type sdram ddr 07 07 07 3 number of row addresses on assembly 12 or 13 0c 0d 0d 4 number of column addresses on assembly 10 or 11 0a 0a 0b 5 number of physical ranks on dimm 1 010101 6 module data width 72 48 48 48 7 module data width (continued) 0 000000 8 module voltage interface levels (v dd q) sstl 2.5v 04 04 04 9 sdram cycle time, ( t ck) cas latency = 2.5, (see note 1) 6ns (-335) 7ns (-26a) 7.5ns (-265) 8ns (-202) 60 70 75 80 60 70 75 80 60 70 75 80 10 sdram access from clock, ( t ac) cas latency = 2.5 0.7ns (-335) 0.75ns (-26a/-265) 0.8ns (-202) 70 75 80 70 75 80 70 75 80 11 module configuration type ecc 020202 12 refresh rate/type 15.62s, 7.8s/self 80 82 82 13 sdram device width (primary ddr sdram) 8 080808 14 error-checking ddr sdram data width 8 080808 15 minimum clock delay, back-to-back random column access 1 clock 010101 16 burst lengths supported 2, 4, 8 0e0e0e 17 number of banks on ddr sdram device 4 040404 18 cas latencies supported 2, 2.5 0c0c0c 19 cs latency 0 010101 20 we latency 1 020202 21 sdram module attributes unbuffered/diff. clock 20 20 20 22 sdram device attributes: general fast/concurrent ap c0 c0 c0 23 sdram cycle time, ( t ck) cas latency = 2 (see note 1) 7.5ns (-335/-26a) 10ns (-265/-202) 75 a0 75 a0 75 a0 24 sdram access from ck, ( t ac) cas latency = 2 0.7ns (-335) 0.75ns (-26a/-265) 0.8ns (-202) 70 75 80 70 75 80 70 75 80 25 sdram cycle time, ( t ck) cas latency = 1.5 n/a 000000 26 sdram access from ck , ( t ac) cas latency = 1.5 n/a 000000 27 minimum row precharge time, ( t rp) 18ns (-335) 20ns (-202/-265/-26a) 48 50 48 50 48 50 28 minimum row active to row active, ( t rrd) 12ns (-335) 15ns (-202/-265/-26a) 30 3c 30 3c 30 3c
128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 31 ?2003, micron technology inc. 29 minimum ras# to cas# delay, ( t rcd) 18ns (-335) 20ns (-202/-265/-26a) 48 50 48 50 48 50 30 minimum ras# pulse width, ( t ras) (see note 2) 42ns 45ns (-26a/-265) 40ns (-202) 2a 2d 28 2a 2d 28 2a 2d 28 31 module rank density 128mb, 256mb, 512mb 20 40 80 32 address and command setup time, ( t is) value set to slow slew rate ( t is s ), (see note 3) 0.8ns (-335) 1.0ns (-26a/-265) 1.1ns (-202) 80 a0 b0 80 a0 b0 80 a0 b0 33 address and command hold time, ( t ih) value set to slow slew rate ( t ih s ), (see note 3) 0.8ns (-335) 1.0ns (-26a/-265) 1.1ns (-202) 80 a0 b0 80 a0 b0 80 a0 b0 34 data/data mask input setup time, ( t ds) 0.45ns (-335) 0.5ns (-26a/-265) 0.6ns (-202) 45 50 60 45 50 60 45 50 60 35 data/data mask input hold time, ( t dh) 0.45ns (-335) 0.5ns (-26a/-265) 0.6ns (-202) 45 50 60 45 50 60 45 50 60 36-40 reserved 00 00 00 41 min active auto refresh time ( t rc) 60ns (-335) 65ns (-26a/-265) 70ns (-202) 3c 41 46 3c 41 46 3c 41 46 42 minimum auto refresh to active/ auto refresh command period, ( t rfc) 72ns (-335) 75ns (-26a/-265) 80ns (-202) 48 4b 50 48 4b 50 48 4b 50 43 sdram device max cycle time ( t ck max ) 12ns (-335) 13ns (-202/-265/-26a) 30 34 30 34 30 34 44 sdram device max dqs-dq skew time ( t dqsq) 0.45ns (-335) 0.5ns (-26a/-265) 0.6ns (-202) 2d 32 3c 2d 32 3c 2d 32 3c 45 sdram device max read data hold skew factor ( t qhs) 0.6ns (-335) 0.75ns (-26a/-265) 1.0ns (-202) 60 75 a0 60 75 a0 60 75 a0 46-61 reserved 00 00 00 62 spd revision release 0.0 00 00 00 63 checksum for bytes 0-62 -335 -26a -265 -202 10 c5 f5 90 33 e8 18 b3 74 29 59 f4 64 manufacturer?s jedec id code micron2c2c2c 65-71 manufacturer?s jedec id code (continued) ff ff ff 72 manufacturing location 01?11 01?b0 01?b0 01?b0 73-90 module part number (ascii) variable data variable data variable data 91 pcb identification code 1-9 01-09 01-09 01-09 table 25: serial presence-detect matrix (mt9vddt1672h(i), mt9vddt3272h(i), mt9vddt6472h(i)) (continued) ?1?/?0?: serial data, ?driven to high?/?driven to low? byte description entry (version) mt9vddt1672h mt9vddt3272h mt9vddt6472h
128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 32 ?2003, micron technology inc. note: 1. device latencies used for spd values. 2. the value of t ras used for -26a/-265 modul es is calculated from t rc - t rp. actual device spec value is 40 ns. 3. the jedec spd specification allows fast or slow slew rate va lues for these bytes. the worst-case (slow slew rate) value is represented here. systems requiring the fast slew rate setup and hold values are supported, provided the faster mini- mum slew rate is met. 92 identification code (continued) 0 000000 93 year of manufacture in bcd variable data variable data variable data 94 week of manufacture in bcd variable data variable data variable data 95-98 module serial number variable data variable data variable data 99-127 manufacturer- specific data (rsvd) ??? table 25: serial presence-detect matrix (mt9vddt1672h(i), mt9vddt3272h(i), mt9vddt6472h(i)) (continued) ?1?/?0?: serial data, ?driven to high?/?driven to low? byte description entry (version) mt9vddt1672h mt9vddt3272h mt9vddt6472h
128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 33 ?2003, micron technology inc. table 26: serial presence-detect matrix (mt18vdds6472h(i), mt18vdds12872h(i)) ?1?/?0?: serial data, ?driven to high?/?driven to low? byte description entry (version) mt18vdds6472h mt18vdds12872h 0 number of spd bytes used by micron 128 80 80 1 total number of bytes in spd device 256 08 08 2 fundamental memory type sdram ddr 07 07 3 number of row addresses on assembly 13 0d 0d 4 number of column addresses on assembly 10 or 11 0a 0b 5 number of physical ranks on dimm 20202 6 module data width 72 48 48 7 module data width (continued) 00000 8 module voltage interface levels (v dd q) sstl 2.5v 04 04 9 sdram cycle time, ( t ck) cas latency = 2.5, (see note 1) 7ns (-26a) 7.5ns (-265) 8ns (-202) 70 75 80 70 75 80 10 sdram access from clock,( t ac) cas latency = 2.5 0.75ns (-26a/-265) 0.8ns (-202) 75 80 75 80 11 module configuration type ecc 02 02 12 refresh rate/type 7.81s/self 82 82 13 sdram device width (primary ddr sdram) 80808 14 error-checking ddr sdram data width 80808 15 minimum clock delay, back-to-back random column access 1 clock 01 01 16 burst lengths supported 2, 4, 8 0e 0e 17 number of banks on ddr sdram device 40404 18 cas latencies supported 2, 2.5 0c 0c 19 cs latency 00101 20 we latency 10202 21 sdram module attributes unbuffered/diff. clock 20 20 22 sdram device attributes: general fast/concurrent ap c0 c0 23 sdram cycle time, ( t ck) cas latency = 2 (see note 1) 7.5ns (-26a) 10ns (-265/-202) 75 a0 75 a0 24 sdram access from ck , ( t ac) cas latency = 2 7.5ns (-26a/-265) 8ns (-202) 75 80 75 80 25 sdram cycle time, ( t ck) cas latency = 1.5 n/a 00 00 26 sdram access from ck , ( t ac) (cas latency = 1.5) n/a 00 00 27 minimum row precharge time, ( t rp) 20 ns 50 50 28 minimum row active to row active, ( t rrd) 15 ns 3c 3c 29 minimum ras# to cas# delay, ( t rcd) 20 ns 50 50 30 minimum ras# pulse width, ( t ras) (see note 2) 45ns (-26a/-265) 40ns (-202) 2d 28 2d 28 31 module rank density 256mb, 512mb 40 80 32 address and command setup time, ( t is) value set to slow slew rate ( t is s ), (see note 3) 1.0ns (-26a/-265) 1.1ns (-202) a0 b0 a0 b0
128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms micron technology, inc., reserves the right to change products or specifications without notice. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 34 ?2003, micron technology inc. note: 1. device latencies used for spd values. 2. the value of t ras used for -26a/-265 modul es is calculated from t rc - t rp. actual device spec value is 40 ns. 3. the jedec spd specification allows fast or slow slew rate va lues for these bytes. the worst-case (slow slew rate) value is represented here. systems requiring the fast slew rate setup and hold values are supported, provided the faster mini- mum slew rate is met. 33 address and command hold time, ( t ih) value set to slow slew rate ( t ih s ), (see note 3) 1.0ns (-26a/-265) 1.1ns (-202) a0 b0 a0 b0 34 data/data mask input setup time, ( t ds) 0.5ns (-26a/-265) 0.6ns (-202) 50 60 50 60 35 data/data mask input hold time, ( t dh) 0.5ns (-26a/-265) 0.6ns (-202) 50 60 50 60 36-40 reserved 00 00 41 min active auto refresh time ( t rc) 65ns (-26a/-265) 70ns (-202) 41 46 41 46 42 minimum auto refresh to active/ auto refresh command period, ( t rfc) 75ns (-26a/-265) 80ns (-202) 4b 50 4b 50 43 sdram device max cycle time ( t ck max ) t ck (max) = 13.0ns 34 34 44 sdram device max dqs-dq skew time ( t dqsq) 0.5ns (-26a/-265) 0.6ns (-202) 32 3c 32 3c 45 sdram device max read data hold skew factor ( t qhs) 0.75ns (-26a/-265) 1.0ns (-202) 75 a0 75 a0 46-61 reserved 00 00 62 spd revision release 0.0 00 00 63 checksum for bytes 0-62 -26a -265 -202 e9 19 b4 2a 5a f5 64 manufacturer?s jedec id code micron 2c 2c 65-71 manufacturer?s jedec id code (continued) ff ff 72 manufacturing location 01?11 01?b0 01?b0 73-90 module part number (ascii) variable data variable data 91 pcb identification code 1-9 01-09 01-09 92 identification code (continued) 00000 93 year of manufacture in bcd variable data variable data 94 week of manufacture in bcd variable data variable data 95-98 module serial number variable data variable data 99-127 manufacturer- specific data (rsvd) ?? table 26: serial presence-detect matrix (mt18vdds6472h(i), mt18vdds12872h(i)) (continued) ?1?/?0?: serial data, ?driven to high?/?driven to low? byte description entry (version) mt18vdds6472h mt18vdds12872h
? 8000 s. federal way, p.o. box 6, boise, id 83707-0006, tel: 208-368-3900 e-mail: prodmktg@micron.com, internet: http://www.m icron.com, customer comment line: 800-932-4992 micron and the m logo are registered trademarks and the micron logo and twindie are trademarks of micron technology, inc. 128mb, 256mb, 512mb, 1gb (x72, ecc) 200-pin ddr sodimm advance 16, 32, 64, 128 meg x72 ddr sdram sodimms ?2003, micron technology inc. dds9_18c16_32_64_128x72hg_a.fm - rev. a 1/03 en 35 figure 15: 200-pin sodimm ddr modules note: all dimensions in inches (millimet ers) or typical where noted. data sheet designation advance: this datasheet contains initial descrip- tions of products still under development. this desig- nation applies to part numbers mt18vdds6472h(i) and mt18vdds12872h(i). released: this data sheet contains minimum and maximum limits specified over the complete power supply and temperature range for production devices. although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur. this designa- tion applies to part numbers mt9vddt1672h(i), mt9vddt3272h(i), and mt9vddt6472h(i). u1 u2 u3 u4 u5 u8 u6 u7 u9 u10 0.150 (3.80) max pin 1 2.666 (67.72) 2.656 (67.45) 0.787 (20.00) typ 0.071 (1.80) (2x) 0.024 (.61) typ 0.018 (.46) typ 0.079 (2.00) r (2x) pin 199 pin 200 pin 2 front view 0.079 (2.00) 0.236 (6.00) 2.504 (63.60) 0.096 (2.44) 0.039 (.99) typ 1.505 (35.69) 1.495 (35.43) back view 0.043 (1.10) 0.035 (0.90) max min

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