shanghai semitech semiconductor co., ltd email:sales@semitech.cn tel:+86-21-64605419 fax:+86-21-64606443 SRC0524P ultra low capacitance esd protection array description the esd0524p provides a typical line to line capaci tance of 0.5pf between i/o pins and low insertion loss up to 3ghz providing greater signal integrity making it ideally suited for hdmi appl ications, such as digital tvs, dvd players, computing, set-top boxes and mddi applications in mo bile computing devices. this series has been specifically designed to protect sensitive components which are connected to high-speed data and transmission lines from overvolt age caused by esd(electrostatic discharge), cde (cable discharge events),and eft (electrical fast transients). features ? protects two or four i/o lines ? low capacitance: 0.5pf typical between i/o channel ? low leakage current ? 5v operating voltage ? response time < 1ns ? solid-state silicon avalanche technology ? device meets msl 1 requirements ? rohs com pliant applications ? high definition m ulti-media interface (hdmi) ? digital visual interface (dvi) ? usb 1.1/2.0/3.0/otg ? ieee 1394 firewire ports ? notebooks & handhelds ? projection tv & monitors ? set-top box ? flat panel displays ? pci express mechanical characteristics ? dfn2510 package ? flammability rating: ul 94v-0 ? terminal: matte tin plated. ? packaging: tape and reel ? high temperature soldering guaranted:260 /10s ? reel size: 7 inch www.semitech.cn
SRC0524P maximum ratings and characteristics @ 25c ambient temperature (unless otherwise noted) symbol parameter value units p pp peak pulse power (8/20 s) 150 w i pp peak pulse current (8/20 s) 5 a v esd esd per iec 61000-4-2 (air) esd per iec 61000-4-2 (contact) 15 8 kv t opt operating temperature -55/+150 ?c t stg storage temperature -55/+150 ?c electrical characteristics(tamb=25 ? c) symbol parameter test condition min typ max units v rwm reverse working voltage any i/o pin to gnd 5.0 v v br reverse breakdown voltage i t = 1ma any i/o pin to gnd 6.0 v i r reverse leakage current v rwm = 5v any i/o pin to gnd 1 a v f diode forward voltage i f = 15ma 0.85 1.2 v v c1 clamping voltage 1 i pp = 1a, t p = 8/20 s any i/o pin to gnd 15.5 v v c2 clamping voltage 2 i pp = 5, t p = 8/20 s any i/o pin to gnd 25 v c j1 junction capacitance 1 v r = 0v, f = 1mhz between i/o pins 0.3 0.6 pf c j2 junction capacitance 2 v r = 0v, f = 1mhz any i/o pin to gnd 0.45 0.8 pf note: i/o pins are pin 1,2,4,5. electrical characteristics curve www.semitech.cn
SRC0524P www.semitech.cn
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