2SC380TM transistor (npn) feature power dissipation p cm : 0.3 w (tamb=25 ) collector current i cm: 0.05 a collector-base voltage v (br)cbo : 35 v operating and storage junction temperature range t stg : -55 to +150 tj: 150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic= 100a , i e =0 35 v collector-emitter breakdown voltage v(br) ceo i c = 1ma , i b =0 30 v emitter-base breakdown voltage v(br) ebo i e = 100a, i c =0 4 v collector cut-off current i cbo v cb = 35v , i e =0 0.1 a emitter cut-off current i ebo v eb = 4v, i c =0 0.1 a dc current gain h fe v ce =12v, i c = 2ma 40 240 collector-emitter saturation voltage v ce(sat) i c = 10ma, i b = 1ma 0.4 v base-emitter voltage v be i c = 10ma, i c = 1ma 1.0 v transition frequency f t v ce = 5 v, i c = 10ma 100 mhz collector output capacitance c ob v cb =10v, i e = 0,f=1mhz 1.4 2.0 3.2 pf collector-base time constant c c rbb? v ce =10v, i e =-1ma, f=30mhz 10 50 ps power gain g pe v cc =6v,ie=-1ma f=10.7mhz 27 29 33 db classification of h fe(1) rank r o y range 40-80 70-140 120-240 1 2 3 to-92 1. emitter 2. collector 3. base 2SC380TM http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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