technical data power mosfet n channel devices IRF450 13 ampere 500 volts 0.4 w repetitive avalanche ratings low r ds(on) low drive requirement dynamic dv/dt rating absolute maximum ratings (t c = 25 0 c unless otherwise noted ) parameters / test conditions symbol value units drain - source voltage v ds 500 v gate - source voltage v gs 20 v continuous drain current t c = 25 0 c i d 13 a pulsed drain current (1) i dm 52 a power dissipation t c = 25 0 c p d 150 w operating junction & storage temperature range t j, t stg - 55 to +150 0 c lead temperature (1/16" from case for 10 secs.) t l 300 0 c thermal resistance ratings thermal resistance symbol typ. max. units junction - to - case r thjc 0.83 0 c /w junction - to - ambient r thja 0.15 30 0 c /w case - to - sink r thcs 0 c /w (1)pulse width limited by maximum junction temperature 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 620 - 2600 / fax: (978) 689 - 0803 10060 3 page 1 of 2
power mosfet n channel irf 4 50 electrical characteristics (t j = 25 0 c unles s otherwise noted) parameters / test conditions symbol min. typ. max. units drain - source breakdown voltage v gs = 0 v, i d = 250 m a v (br)dss 500 v gate threshold voltage v ds = v gs, i d = 250 m a v gs(th) 2.0 4.0 v gate - body leakage v gs = at rated v gs i gss 100 na zero gate voltage drain current v ds = max rating , v gs = 0 v i dss 250 m a zero ga te voltage drain current v ds = 80 % max v (br)dss, v gs = 0 v, t j = 125 0 c i dss 1000 m a drain - source on - state resistance (2) v gs = 10 v, i d = 7.2 a r ds(on) 0.40 w forward transconductance (2) v ds = 50 v, i d = 7.2 a g f s 8.7 s( w ) input capacitance output capacitance reverse transfer capacitance v gs = v v ds = 25 v f = mhz c iss c oss c rss 2700 350 75 pf total gate charge gate - source charge gate - drain charge v ds = v (br)dss * 0.8 v gs = 10 v, i d = 13 a (gate charge is essentially independent of operating temperature.) q g q gs q gd 130 17 64 nc turn - on delay time rise time turn - off delay time fall time v dd = 250 v, i d = 13 a, r g = 6 .2 w r o = 20 w ( switching time is essentially independent of operating temperature.) t d(on) t r t d(off) t f 27 66 100 60 ns source - drain diode ratings & characteristics (t j = 25 0 c unless otherwise noted) parameters / test conditions symbol min. typ. max units continuous current i s 13 a pulsed current (1) i sm 52 a forward voltage (2) i f = i s , v gs = 0 v v sd 1.4 v reverse recovery time i f = i s , di/dt = a/ m s t rr 1200 ns reverse recovered charge i f = i s , di/dt = a/ m s q rr 3.2 14 m c (1)pulsed width limited by maximum junction temperature. (2)pulse test: pulse width < 300 m sec. duty cycle 2%. 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 620 - 2600 / fax: (978) 689 - 0803 100603 page 2 of 2
|
