feature s : descript i o n : ? p ate n te d tec hn ol og y ? h igh s ig n al - 3 db p a ss in g b a n d w i d t h at 1 . 2 g h z ? near-zero propagation delay ? v c c = 1.6 5 v t o 3 . 6 v ? ultra-low quiescent power: 0.1 a typical ? ideally suited for low power applications ? i n dus t r ial ope r ating tem p e r atu r e: - 4 0 c t o + 8 5 c ? a v a il a b l e i n 10 p i n w i d e mso p pa c k a g e p o t a t o s e m i c o n d u c t or ? s p o 3 b 2 2 a i s d e s i g n e d f o r w o r l d t o p pe r f o r m a n c e u s i n g s u b m ic r o n c mo s tec h n o lo g y t o a c h i e v e gh z high b an dw idt h . the p o 3 b 2 2 a i s a wide ban dw idth , du al 2:1 m u x / d e mu x . the sw itc h i n t r o du ce s n o ad d iti on al gro u n d b o u nce no i s e or p r o p agati o n d elay . p i n co n f i gu r at i on bloc k d ia g r a m pin de s cription 1 2 3 4 5 10 9 8 7 6 s v cc truth table e i a 0 i a 1 i b 0 i b 1 s y a e y b i y e sw sw sw sw sw pin name description i a n - i b n data inputs s select inputs e enable y a -y b data outputs gnd ground v cc power e s y a y b function h x hi-z hi-z disable l l i a 0 i b 0 s = 0 l h i a 1 i b 1 s = 1 wide bandwidth, dual 2:1 mux/dem u x gnd y b i b 1 i b 0 y a i a 0 i a 1 high b andwidth p ot a t o c hip 1 01 / 01 / 10 potato semiconductor corporation PO3B22A www.potatosemi.com
storage t emperature ................................................ ?65c to +150c ambient t emperature with power applied ............... ?40c to +85c supply v oltage to ground potential ........................... ?0.5 v to +4.6v dc input v oltage ........................................................ ?0.5 v to +vcc dc output current ............................................................... .... 120ma power dissipation ............................................................... ........ 0.5w maxi mum rat i ngs (above which the useful life may be impaired. for user guidelines, not tes t ed.) dc elec t ric a l ch arac t eri st ic s , 3 . 3 v supp l y (over the operating range, t a = ?40c to +85c, v cc = 3.3 v 10% ) parameters description t est conditions min. t yp. max. units v ih input high v oltage guaranteed logic high level 2.0 v v il input lo w v oltage guaranteed logic lo w level 0.8 i ih input high current v cc = max. , v in = v cc 1 a i il input lo w current v cc = max. , v in = gnd 1 i ozh high impedance output current 0 y , i n v cc 1 r on switch on-resistance v cc = min., v in = 0.0 v , i on = -48 m a or -64ma 12 16 v cc = min., v in = v cc , i on = -15 ma 12 16 dc elec t rical ch arac t eri st ic s , 2 .5 v supp l y (over operating range, t a = ?40c to +85c, v cc = 2.5 v 10%) parameters description t est conditions min. t yp. max. units v ih input high v oltage guaranteed logic high level 1.8 v cc + 0.3 v v il inout lo w v oltage guaranteed logic lo w level ?0.3 0.8 i ih input high current v cc = max., v in = v cc 1 a i il input lo w current v cc = max., v in = gnd 1 i ozh high impedance current 0 y , in v cc 1 r on switch on resistance v cc = min., v in = 0.0 v , i on = ?48ma 18 22 v cc = min., v in = 2.25 v , i on = -15m a 18 22 n o t e : s t r e s s e s g r eat e r t h a n t h o s e l i s t e d u n d e r maxim u m r a tings may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this speci?cation is not implied. exposure to absolute maximum rating conditions for extended periods may a f fect reliabilit y . wide bandwidth, dual 2:1 mux/dem u x high b andwidth p ot a t o c hip 2 01 / 01 / 10 potato semiconductor corporation PO3B22A www.potatosemi.com
po w er supply c h aracteristics s y m b o l descrip t i o n tes t c o ndi t i o n s ( 1 ) m i n t y p m a x uni t ic c qu i e s c e n t p o w e r s u p p l y c ur r e n t v cc = m a x , v i n = v c c o r g n d - 0.1 3 ua n o t es : 1 . f o r c o n d i t i o n s s h o w n a s m a x . o r m i n . , u s e a p p r o p r i a t e v a l u e s p e c i f i e d u n d e r e l e c t r i c a l c h a r a c t e r i s t i c s fo r t h e a p p l i c a b l e d e v i c e t y p e . 2 . t y pic a l v a l u e s a r e a t v c c = 3 . 3 v , 2 5 c a m b i e n t . 3 . t h i s p a r a m e t e r i s g u a r a n t e e d b u t n o t t e s t e d . 4 . n o t m o r e t h a n o n e o u t p u t s h o u l d b e s h o r t e d a t o n e t i m e . d u r a t i o n o f t h e t e s t s h o u l d n o t e x c e e d o n e s e c o n d . 5 . v o h = v c c ? 0 . 6 v a t r a t e d c u r r e n t capacitance (t a = 25c f = 1 mhz) switching characteristics over 3.3v operating range parameters description conditions units max. t plh t phl see t est diagram 0.3 ns t pzh t pzl see t est diagram 2.0 t phz t plz 3.0 dynamic electrical characteristics over the operating range (t a = -40o to +85o, v cc = 3.3 v 10%) parameter description t est condition t yp. units x t alk crosstalk r l = 100 -60 db o irr o f f-isolation r l = 100 -60 bw -3db bandwidth r l = 100 1.2 ghz parameters description t est conditions t ypical units c in input capacitance v in = 0v 3 pf c offyn y n capacitance, switch off 8 c offin i n capacitance, switch off 5 c on i n /y n capacitance, switch on 1 3 propogation delay bus enable time bus disable time wide bandwidth, dual 2:1 mux/dem u x high b andwidth p ot a t o c hip 3 01 / 01 / 10 potato semiconductor corporation PO3B22A www.potatosemi.com
sw i t c h i ng ch arac t eri st ic s over 2 . 5 v o p era t i n g r a n g e parameters description conditions units max. t plh t phl see t est diagram 0.3 ns t pzh t pzl see t est diagram 2.0 t phz t plz 3.0 te st c irc u i t fo r elec t rical ch ar a c t eri st ic s r t 10pf c l v cc v in v ou t 200-ohm 200-ohm 6.0v pulse generator d.u.t sw i t c h po s i t io n s t est switch t plz , t pzl 6.0 v t phz , t pzh gnd prop delay open sw i t c h i n g wave fo r m s t plz 1.25v 1.25v 2.5v v oh 0v v ol v dd/2 v dd/2 t phz t pzl t pzh output output v ol +0.3v v oh ?0.3v v ol v oh sel input t plh 2.5v 2.5v 2.5v 2.5v t phl 3.5v 1.5v output v oh v ol v oltage w aveforms p r opagation delay t imes v oltage w aveforms enable and disable t imes propogation delay bus enable time bus disable time wide bandwidth, dual 2:1 mux/dem u x high b andwidth p ot a t o c hip 4 01 / 01 / 10 potato semiconductor corporation PO3B22A www.potatosemi.com
p a c k a g i ng me c h a n i c a l d r a w i ng : 1 0 p i n m s o p 10 0.118 3.00 6 1 5 0.193 4.90 0.043 1.10 0.020 0.50 0.118 3.00 0 -8 4x 5 -15 0.003 0.009 0.080 0.230 0.007 0.011 0.17 0.27 0.000 0.006 0.00 0.15 0.016 0.032 0.040 0.080 wide bandwidth, dual 2:1 mux/dem u x high b andwidth p ot a t o c hip 5 01 / 01 / 10 potato semiconductor corporation PO3B22A www.potatosemi.com ic ordering information top-marking ordering code package pb-free & green pb-free & green PO3B22Amu for tube PO3B22Amr for tape & reel PO3B22Am PO3B22Am -40 c to 85 c -40 c to 85 c t a ic package information p a c k a ge code p a c k a ge type qty per tube t ape width (mm) t ape pi t ch (mm) pin 1 l oc a tion t ape trailer len g th qty per reel t ape leader len g th t op l eft corner 39 (12?) 3000 80 12 8 64 (20?) m msop 10 msop 10 msop 10
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