inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1141 description collector-emitter sustaining voltage- : v ceo(sus) = 300v(min) high dc current gain : h fe = 500(min)@i c = 4a applications designed for high voltage switching, igniter applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 400 v v ceo collector-emitter voltage 300 v v ebo emitter-base voltage 7 v i c collector current-continuous 6 a i cm collector current-peak 10 a p c collector power dissipation @ t c =25 40 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1141 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 3a; l= 10mh, pw= 50 s; f= 50hz 300 v v (br)cbo collector-base breakdown voltage i c = 0.1ma; i e = 0 400 v v (br)ebo emitter-base breakdown voltage i e = 50ma; i c = 0 7 v v ce( sat ) collector-emitter saturation voltage i c = 4a; i b = 40ma b 1.5 v v be( sat ) base-emitter saturation voltage i c = 4a; i b = 40ma b 2.0 v i ceo collector cutoff current v ce = 300v; r be = 100 a h fe dc current gain i c = 4a; v ce = 2v 500 switching times t on turn-on time 2.0 s t off turn-off time i c = 4a, i b1 = -i b2 = 40ma 23 s isc website www.iscsemi.cn 2
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