1. product profile 1.1 general description n-channel enhancement mode field-effect transistor (fet) in a sot23 (to-236ab) small surface-mounted device (smd) plasti c package using trench mosfet technology. 1.2 features and benefits ? logic-level compatible ? very fast switching ? trench mosfet technology 1.3 applications ? relay driver ? high-speed line driver ? low-side loadswitch ? switching circuits 1.4 quick reference data [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated, mounting pad for drain 6 cm 2 . 2. pinning information PMV90EN 30 v, single n-channel trench mosfet rev. 1 ? 13 february 2012 product data sheet table 1. quick reference data symbol parameter conditions min typ max unit v ds drain-source voltage t amb =25c --30v v gs gate-source voltage -20 - 20 v i d drain current v gs =10v; t amb = 25 c; t 5 s [1] --2.1a static characteristics r dson drain-source on-state resistance v gs =10v; i d =1.9a; t j = 25 c - 70 84 m ? table 2. pinning information pin symbol description simplified outline graphic symbol 1 g gate sot23 (to-236ab) 2ssource 3 d drain 12 3 s d g 017aaa253 1 of 3 product specification sales@twtysemi.com http://www.twtysemi.com
PMV90EN 30 v, single n-channel trench mosfet 3. ordering information 4. marking [1] % = placeholder for manufacturing site code table 3. ordering information type number package name description version PMV90EN to-236ab plastic surface-mounted package; 3 leads sot23 table 4. marking codes type number marking code [1] PMV90EN ec% 5. limiting values [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated, mounting pad for drain 6 cm 2 . [2] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated and standard footprint. table 5. limiting values in accordance with the absolute maxi mum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage t amb =25c - 30 v v gs gate-source voltage -20 20 v i d drain current v gs =10v; t amb = 25 c; t 5 s [1] -2.1a v gs =10v; t amb =25c [1] -1.9a v gs =10v; t amb = 100 c [1] -1.2a i dm peak drain current t amb = 25 c; single pulse; t p 10 s - 7.6 a p tot total power dissipation t amb =25c [2] - 310 mw [1] - 455 mw t sp = 25 c - 2085 mw t j junction temperature -55 150 c t amb ambient temperature -55 150 c t stg storage temperature -65 150 c source-drain diode i s source current t amb =25c [1] -0.5a 2 of 3 product specification sales@twtysemi.com http://www.twtysemi.com
PMV90EN 30 v, single n-channel trench mosfet 6. thermal characteristics [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided c opper, tin-plated, mounting pad for drain 6 cm 2 . table 6. thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient in free air [1] - 350 400 k/w [2] - 240 275 k/w in free air; t 5 s [2] - 186 215 k/w r th(j-sp) thermal resistance from junction to solder point - 5060k/w 7. characteristics table 7. characteristics symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d =250a; v gs =0v; t j =25c 30--v v gsth gate-source threshold voltage i d =250a; v ds =v gs ; t j =25c 1 1.5 2.5 v i dss drain leakage current v ds =30v; v gs =0v; t amb =25c --1a v ds =30v; v gs =0v; t amb = 150 c - - 10 a i gss gate leakage current v gs =20v; v ds =0v; t j = 25 c - - 100 na v gs =-20v; v ds =0v; t j = 25 c - - 100 na r dson drain-source on-state resistance v gs =10v; i d =1.9a; t j = 25 c - 70 84 m ? v gs =10v; i d =1.9a; t j = 150 c - 109 130 m ? v gs =4.5v; i d = 1.6 a; t j =25c - 90 115 m ? g fs forward transconductance v ds =10v; i d = 1.9 a; t j =25c - 5.7 - s dynamic characteristics q g(tot) total gate charge v ds =15v; i d = 1.9 a; v gs =10v; t j =25c -2.64nc q gs gate-source charge - 0.42 - nc q gd gate-drain charge - 0.34 - nc c iss input capacitance v ds =15v; f=1mhz; v gs =0v; t j =25c - 132 - pf c oss output capacitance - 31 - pf c rss reverse transfer capacitance -13-pf t d(on) turn-on delay time v ds =15v; i d = 1.9 a; v gs =10v; r g(ext) =6 ? ; t j =25c -3-ns t r rise time - 8 - ns t d(off) turn-off delay time - 15 - ns t f fall time -5-ns source-drain diode v sd source-drain voltage i s = 0.5 a; v gs =0v; t j =25c - 0.7 1.2 v 3 of 3 product specification sales@twtysemi.com http://www.twtysemi.com
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