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| inchange semiconductor product specification silicon npn power transistors 2N6493 description with to-3 package low collector saturation voltage high dc current gain darlington applications general-purpose power amplifier and low frequency swithing applications pinning absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 100 v v ceo collector-emitter voltage open base 70 v v ebo emitter-base voltage open collector 5 v i c collector current 15 a p d total power dissipation t c =25 100 w t j junction temperature 150 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.75 /w pin description 1 base 2 emitter 3 collector fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2N6493 characteristics tm=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1 a ;i b =0 70 v v cesat collector-emitter saturation voltage i c =10a ;i b =100ma 3 v v besat base-emitter saturation voltage i c =10a ;i b =100ma 4 v v be base-emitter on voltage i c =4a ; v ce =4v 2.8 v i ceo collector cut-off current v ce =50v; i b =0 1.0 ma i cex collector cut-off current v ce =100v; v be(off) =-1.5v 0.5 ma i ebo emitter cut-off current v eb =5v; i c =0 3.0 ma h fe-1 dc current gain i c =4a ; v ce =4v 500 h fe-2 dc current gain i c =15a ; v ce =4v 100 inchange semiconductor product specification 3 silicon npn power transistors 2N6493 package outline fig.2 outline dimensions (unindicated tolerance: 0.10mm) |
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