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d a t a sh eet product speci?cation supersedes data of 1999 aug 17 2001 oct 30 discrete semiconductors bgd902l 860 mhz, 18.5 db gain power doubler amplifier b ook, halfpage m3d252
2001 oct 30 2 philips semiconductors product speci?cation 860 mhz, 18.5 db gain power doubler ampli?er bgd902l features excellent linearity extremely low noise excellent return loss properties silicon nitride passivation rugged construction gold metallization ensures excellent reliability low dc current consumption. applications catv systems operating in the 40 to 900 mhz frequency range. description hybrid amplifier module in a sot115j package operating with a supply voltage of 24 v. pinning - sot115j pin description 1 input 2 common 3 common 5+v b 7 common 8 common 9 output fig.1 simplified outline. handbook, halfpage 7 8 9 2 35 1 side view msa319 quick reference data limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min. max. unit g p power gain f = 50 mhz 18.2 18.8 db f = 900 mhz 19 20 db i tot total current consumption (dc) v b = 24 v 350 380 ma symbol parameter min. max. unit v b supply voltage - 30 v v i rf input voltage - 70 dbmv t stg storage temperature - 40 +100 c t mb operating mounting base temperature - 20 +100 c
2001 oct 30 3 philips semiconductors product speci?cation 860 mhz, 18.5 db gain power doubler ampli?er bgd902l characteristics bandwidth 40 to 900 mhz; v b = 24 v; t mb =35 c; z s =z l =75 w . symbol parameter conditions min. typ. max. unit g p power gain f = 50 mhz 18.2 18.5 18.8 db f = 900 mhz 19 19.5 20 db sl slope straight line f = 40 to 900 mhz 0.4 0.9 1.4 db fl ?atness straight line f = 40 to 900 mhz - 0.15 0.3 db s 11 input return losses f = 40 to 80 mhz 21 24 - db f = 80 to 160 mhz 22 26 - db f = 160 to 320 mhz 22 28 - db f = 320 to 650 mhz 19 22 - db f = 650 to 900 mhz 18 21 - db s 22 output return losses f = 40 to 80 mhz 25 32 - db f = 80 to 160 mhz 25 33 - db f = 160 to 320 mhz 21 29 - db f = 320 to 750 mhz 20 22 - db f = 750 to 900 mhz 19 22 - db s 21 phase response f = 50 mhz - 45 - +45 deg ctb composite triple beat 49 channels ?at; v o = 47 dbmv; f m = 859.25 mhz -- 66.5 - 65 db 77 channels ?at; v o = 44 dbmv; f m = 547.25 mhz -- 68 - 66 db 110 channels ?at; v o = 44 dbmv; f m = 745.25 mhz -- 61.5 - 60 db 129 channels ?at; v o = 44 dbmv; f m = 859.25 mhz -- 58 - 56 db 110 channels; f m = 445.25 mhz; v o = 49 dbmv at 550 mhz; note 1 -- 62 - 60 db 129 channels; f m = 697.25 mhz; v o = 49.5 dbmv at 860 mhz; note 2 -- 56 - 53.5 db x mod cross modulation 49 channels ?at; v o = 47 dbmv; f m = 55.25 mhz -- 64.5 - 62 db 77 channels ?at; v o = 44 dbmv; f m = 55.25 mhz -- 67.5 - 65 db 110 channels ?at; v o = 44 dbmv; f m = 55.25 mhz -- 64 - 61.5 db 129 channels ?at; v o = 44 dbmv; f m = 55.25 mhz -- 62.5 - 60 db 110 channels; f m = 55.25 mhz; v o = 49 dbmv at 550 mhz; note 1 -- 60.5 - 58 db 129 channels; f m = 859.25 mhz; v o = 49.5 dbmv at 860 mhz; note 2 -- 58 - 55 db
2001 oct 30 4 philips semiconductors product speci?cation 860 mhz, 18.5 db gain power doubler ampli?er bgd902l notes 1. tilt = 9 db (50 to 550 mhz); tilt = 3.5 db at - 6 db offset (550 to 750 mhz). 2. tilt = 12.5 db (50 to 860 mhz). 3. f p = 55.25 mhz; v p = 44 dbmv; f q = 805.25 mhz; v q = 44 dbmv; measured at f p +f q = 860.5 mhz. 4. f p = 55.25 mhz; v p = 44 dbmv; f q = 691.25 mhz; v q = 44 dbmv; measured at f p +f q = 746.5 mhz. 5. f p = 55.25 mhz; v p = 44 dbmv; f q = 493.25 mhz; v q = 44 dbmv; measured at f p +f q = 548.5 mhz. 6. measured according to din45004b: f p = 851.25 mhz; v p =v o ; f q = 858.25 mhz; v q =v o - 6 db; f r = 860.25 mhz; v r =v o - 6 db; measured at f p +f q - f r = 849.25 mhz. 7. measured according to din45004b: f p = 740.25 mhz; v p =v o ; f q = 747.25 mhz; v q =v o - 6 db; f r = 749.25 mhz; v r =v o - 6 db; measured at f p +f q - f r = 738.25 mhz. 8. measured according to din45004b: f p = 540.25 mhz; v p =v o ; f q = 547.25 mhz; v q =v o - 6 db; f r = 549.25 mhz; v r =v o - 6 db; measured at f p +f q - f r = 538.25 mhz. 9. the module normally operates at v b = 24 v, but is able to withstand supply transients up to 35 v. cso composite second order distortion 49 channels ?at; v o = 47 dbmv; f m = 860.5 mhz -- 66 - 63 db 77 channels ?at; v o = 44 dbmv; f m = 548.5 mhz -- 71 - 66 db 110 channels ?at; v o = 44 dbmv; f m = 746.5 mhz -- 65 - 60 db 129 channels ?at; v o = 44 dbmv; f m = 860.5 mhz -- 62 - 59 db 110 channels; f m = 246 mhz; v o = 49 dbmv at 550 mhz; note 1 -- 69 - 64 db 129 channels; f m = 246 mhz; v o = 49.5 dbmv at 860 mhz; note 2 -- 64 - 59 db d 2 second order distortion note 3 -- 80 - 74 db note 4 -- 83 - 77 db note 5 -- 84 - 78 db v o output voltage d im = - 60 db; note 6 63 64.5 - dbmv d im = - 60 db; note 7 64 65.5 - dbmv d im = - 60 db; note 8 66 67.5 - dbmv ctb compressio n=1db; 129 channels ?at; f = 859.25 mhz 47 48 - dbmv cso compression = 1 db; 129 channels ?at; f = 860.5 mhz 49.5 51.5 - dbmv nf noise ?gure f = 50 mhz - 45db f = 550 mhz - 4.3 5.5 db f = 750 mhz - 5 6.5 db f = 900 mhz - 6 7.5 db i tot total current consumption (dc) note 9 350 365 380 ma symbol parameter conditions min. typ. max. unit
2001 oct 30 5 philips semiconductors product speci?cation 860 mhz, 18.5 db gain power doubler ampli?er bgd902l fig.2 composite triple beat as a function of frequency under tilted conditions. z s =z l =75 w ; v b = 24 v; 110 chs; tilt = 9 db (50 to 550 mhz); tilt = 3.5 db at - 6 db offset (550 to 750 mhz). handbook, halfpage 0 v o (dbmv) f (mhz) ctb (db) 200 - 50 - 60 - 80 - 90 - 70 52 48 40 36 44 400 600 800 mgs444 (1) (1) (2) (3) (4) (2) (3) (4) (1) v o . (2) typ. +3 s . (3) typ. (4) typ. - 3 s . fig.3 cross modulation as a function of frequency under tilted conditions. z s =z l =75 w ; v b = 24 v; 110 chs; tilt = 9 db (50 to 550 mhz); tilt = 3.5 db at - 6 db offset (550 to 750 mhz). handbook, halfpage 0 v o (dbmv) f (mhz) x mod (db) 200 - 50 - 60 - 80 - 90 - 70 52 48 40 36 44 400 600 800 mgs445 (1) (1) (2) (4) (3) (1) v o . (2) typ. +3 s . (3) typ. (4) typ. - 3 s . fig.4 composite second order distortion as a function of frequency under tilted conditions. z s =z l =75 w ; v b = 24 v; 110 chs; tilt = 9 db (50 to 550 mhz); tilt = 3.5 db at - 6 db offset (550 to 750 mhz). handbook, halfpage 0 v o (dbmv) f (mhz) cso (db) 200 - 50 - 60 - 80 - 90 - 70 52 48 40 36 44 400 600 800 mgs446 (1) (1) (2) (2) (3) (4) (4) (3) (1) v o . (2) typ. +3 s . (3) typ. (4) typ. - 3 s .
2001 oct 30 6 philips semiconductors product speci?cation 860 mhz, 18.5 db gain power doubler ampli?er bgd902l fig.5 composite triple beat as a function of frequency under tilted conditions. z s =z l =75 w ; v b = 24 v; 129 chs; tilt = 12.5 db; (50 to 860 mhz). (1) v o . (2) typ. +3 s . (3) typ. (4) typ. - 3 s . handbook, halfpage 0 v o (dbmv) f (mhz) ctb (db) 200 1000 - 50 - 60 - 80 - 90 - 70 52 48 40 36 44 400 600 800 mgs447 (4) (1) (2) (3) fig.6 cross modulation as a function of frequency under tilted conditions. z s =z l =75 w ; v b = 24 v; 129 chs; tilt = 12.5 db; (50 to 860 mhz). (1) v o . (2) typ. +3 s . (3) typ. (4) typ. - 3 s . handbook, halfpage 0 v o (dbmv) f (mhz) x mod (db) 200 1000 - 50 - 60 - 80 - 90 - 70 52 48 40 36 44 400 600 800 mgs448 (2) (3) (4) (1) fig.7 composite second order distortion as a function of frequency under tilted conditions. z s =z l =75 w ; v b = 24 v; 129 chs; tilt = 12.5 db; (50 to 860 mhz). (1) v o . (2) typ. +3 s . (3) typ. (4) typ. - 3 s . handbook, halfpage 0 v o (dbmv) f (mhz) cso (db) 200 1000 - 50 - 60 - 80 - 90 - 70 52 48 40 36 44 400 600 800 mgs449 (2) (3) (4) (1)
2001 oct 30 7 philips semiconductors product speci?cation 860 mhz, 18.5 db gain power doubler ampli?er bgd902l fig.8 composite triple beat as a function of output voltage. z s =z l =75 w ; v b = 24 v; 129 chs; f m = 859.25 mhz. (1) typ. +3 s . (2) typ. (3) typ. - 3 s . handbook, halfpage 40 v o (dbmv) 45 50 55 mgs450 ctb (db) - 20 - 30 - 40 - 50 - 60 - 70 (1) (2) (3) fig.9 composite second order distortion as a function of output voltage. z s =z l =75 w ; v b = 24 v; 129 chs; f m = 860.5 mhz. (1) typ. +3 s . (2) typ. (3) typ. - 3 s . handbook, halfpage 40 v o (dbmv) 45 50 55 mgs451 cso (db) - 30 - 40 - 50 - 60 - 70 - 80 (2) (3) (1)
2001 oct 30 8 philips semiconductors product speci?cation 860 mhz, 18.5 db gain power doubler ampli?er bgd902l package outline unit a 2 max. c ee 1 q q max. q 1 q 2 u 1 max. u 2 w references outline version european projection issue date iec jedec eiaj mm 20.8 9.1 0.51 0.38 0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8 4.15 3.85 2.4 38.1 25.4 10.2 4.2 44.75 8 0.25 0.1 3.8 bf p 6-32 unc y w s dimensions (mm are the original dimensions) sot115j 0 5 10 mm scale a max. d max. l min. e max. z max. rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 unc and 2 extra horizontal mounting holes; 7 gold-plated in-line leads sot115j d u 1 q q 2 q 1 b f s a z p e a 2 l c d q u 2 m w 789 23 w e e 1 5 p 1 d max. y m b y m b b 99-02-06 y m b
2001 oct 30 9 philips semiconductors product speci?cation 860 mhz, 18.5 db gain power doubler ampli?er bgd902l data sheet status notes 1. please consult the most recently issued data sheet before initiating or completing a design. 2. the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the latest information is available on the internet at url http://www.semiconductors.philips.com. data sheet status (1) product status (2) definitions objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. changes will be communicated according to the customer product/process change noti?cation (cpcn) procedure snw-sq-650a. definitions short-form specification ? the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition ? limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information ? applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support applications ? these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes ? philips semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2001 oct 30 10 philips semiconductors product speci?cation 860 mhz, 18.5 db gain power doubler ampli?er bgd902l notes
2001 oct 30 11 philips semiconductors product speci?cation 860 mhz, 18.5 db gain power doubler ampli?er bgd902l notes
? koninklijke philips electronics n.v. 2001 sca73 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. philips semiconductors C a worldwide company contact information for additional information please visit http://www.semiconductors.philips.com . fax: +31 40 27 24825 for sales of?ces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com . printed in the netherlands 613518/03/pp 12 date of release: 2001 oct 30 document order number: 9397 750 08854

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