2sa2121 2005-07-27 1 toshiba transistor silicon pnp triple diffused type 2sa2121 power amplifier applications p c = 220w complementary to 2sc5949 maximum ratings (tc = 25c) characteristic symbol rating unit collector-base voltage v cbo ? 200 v collector-emitter voltage v ceo ? 200 v emitter-base voltage v ebo ? 5 v collector current i c ? 15 a base current i b ? 1.5 a collector power dissipation p c 220 w junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c unit: mm jedec D jeita D toshiba 2-21f1a weight: 9.75 g (typ.)
2sa2121 2005-07-27 2 electrical characteristics (tc = 25c) characteristic symbol test conditions min typ. max unit collector cut-off current i cbo v cb = ? 200 v, i e = 0 D D ? 5.0 a emitter cut-off current i ebo v eb = ? 5 v, i c = 0 D D ? 5.0 a collector-emitter breakdown voltage v (br) ceo i c = ? 50 ma, i b = 0 ? 200 D D v h fe (1) (note 1) v ce = ? 5 v, i c = ? 1 a 55 D 160 dc current gain h fe (2) v ce = ? 5 v, i c = ? 8 a 35 60 D collector-emitter saturation voltage v ce (sat) i c = ? 10 a, i b = ? 1 a D ? 1.5 ? 3.0 v base-emitter voltage v be v ce = ? 5 v, i c = ? 8 a D ? 1.0 ? 1.5 v transition frequency f t v ce = ? 5 v, i c = ? 1 a D 25 D mhz collector output capacitance c ob v cb = ? 10 v, i e = 0, f = 1 mhz D 470 D pf note 1: h fe(1) classification r: 55 to 110, o: 80 to 160 marking 2sa2121 toshiba japan lot no. a line indicates lead (pb)-free package or lead (pb)-free finish. part no. (or abbreviation code) characteristisc indicator
2sa2121 2005-07-27 3 ? 12 0 ? 8 ? 12 ? 16 ? 20 ? 4 ? 6 ? 8 ? 10 0 ? 2 ? 4 ? 0.1 5 10 1000 ? 0.03 ? 30 ? 10 ? 10 1 10 ? 1 ? 0.1 ? 0.01 100 i c ? v ce i c ? v be hfe ? i c v ce (sat) ? i c f t ? i c common emitter tc = 25c v ce = ? 5 v tc = 100c 25 ? 25 common emitter v ce = ? 5 v i b = ? 20 ma common emitter tc = 25c ? 500 ? 400 ? 200 ? 300 ? 100 ? 50 ? 0.5 0 ? 8 ? 12 ? 16 0 ? 1.0 ? 2.5 100 ? 1000 ? 0.1 ? 1 ? 10 ? 10 ? 100 ? 0.1 ? 1 safe operating area ? 100 transition frequency f t (mhz) collector-emitter voltage v ce (v) collector current i c (a) base-emitter voltage v be (v) collector current i c (a) collector current i c (a) dc current gain h fe collector current i c (a) collector current i c (a) collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) collector-emitter voltage v ce (v) tc = 100c 25 ? 25 common emitter v ce = ? 5 v ? 4 ? 1.5 ? 2.0 300 500 30 50 ? 1 ? 3 ? 0.3 ? 0.1 ? 0.03 ? 30 ? 10 ? 1 ? 3 ? 0.3 tc = 100c 25 ? 25 common emitter i c / i b = 10 v ? 0.03 ? 0.05 ? 5 ? 0.5 ? 1 ? 3 ? 0.1 ? 0.3 v ceo max *:single non-repetitive pulse tc = 2 5 c curves must be de-rated linearly with increase in temperature. 1 ms * i c max (pulsed) * 10 ms * i c max (continuous) dc operation tc = 25c 100 ms *
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