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BB305M build in biasing circuit mos fet ic uhf/vhf rf amplifier ade-208-607d (z) 5th. edition mar. 2001 features build in biasing circuit; to reduce using parts cost & pc board space. superior cross modulation characteristics. high gain; (pg = 28 db typ. at f = 200 mhz) wide supply voltage range; applicable with 5v to 9v supply voltage. withstanding to esd; build in esd absorbing diode. withstand up to 200v at c=200pf, rs=0 conditions. provide mini mold packages; mpak-4(sot-143rmod) outline mpak-4 1 4 3 2 1. source 2. gate1 3. gate2 4. drain notes: 1. marking is ?w . 2. BB305M is individual type number of hitachi bbfet.
BB305M 2 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v ds 12 v gate1 to source voltage v g1s +10 ? v gate2 to source voltage v g2s 10 v drain current i d 25 ma channel power dissipation pch 150 mw channel temperature tch 150 c storage temperature tstg ?5 to +150 c
BB305M 3 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 12vi d = 200 m a, v g1s = v g2s = 0 gate1 to source breakdown voltage v (br)g1ss +10vi g1 = +10 m a, v g2s = v ds = 0 gate2 to source breakdown voltage v (br)g2ss 10vi g2 = 10 m a, v g1s = v ds = 0 gate1 to source cutoff current i g1ss +100 na v g1s = +9v, v g2s = v ds = 0 gate2 to source cutoff current i g2ss 100 na v g2s = 9v, v g1s = v ds = 0 gate1 to source cutoff voltage v g1s(off) 0.4 1.0 v v ds = 5v, v g2s = 4v, i d = 100 m a gate2 to source cutoff voltage v g2s(off) 0.4 1.0 v v ds = 5v, v g1s = 5v, i d = 100 m a input capacitance c iss 2.3 2.8 3.5 pf v ds = 5v, v g1 = 5v output capacitance c oss 1.1 1.5 1.9 pf v g2s =4v, r g = 82k w reverse transfer capacitance c rss 0.017 0.04 pf f = 1mhz drain current i d(op) 110 1520mav ds = 5v, v g1 = 5v, v g2s = 4v r g = 82k w i d(op) 2 13 ma v ds = 9v, v g1 = 9v, v g2s =6v r g = 220k w forward transfer admittance |y fs |1 23 28 ms v ds = 5v, v g1 = 5v, v g2s =4v r g =82k w , f = 1khz |y fs |2 28 ms v ds = 9v, v g1 = 9v, v g2s =6v r g = 220k w , f = 1khz power gain pg1 24 28 db v ds = 5v, v g1 = 5v, v g2s =4v r g = 82k w , f = 200mhz pg2 28 db v ds = 9v, v g1 = 9v, v g2s =6v r g = 220k w , f = 200mhz noise figure nf1 1.4 1.9 db v ds = 5v, v g1 = 5v, v g2s =4v r g = 82k w , f = 200mhz nf2 1.4 db v ds = 9v, v g1 = 9v, v g2s =6v r g = 220k w , f = 200mhz
BB305M 4 main characteristics 200mhz power gain, noise figure test circuit gate 1 source drain gate 2 r g a i d v g2 v g1 v g2 input(50 ) 1000p 36p 1000p l1 v = v d g1 r g bbfet rfc output(50 ) l2 1000p 10p max 1000p 1000p 47k 1sv70 1000p 1000p 1000p 47k 47k 82k v t v t unit : resistance ( ) capacitance (f) 1sv70 l1 : f 1mm enameled copper wire,inside dia 10mm, 2turns l2 : f 1mm enameled copper wire,inside dia 10mm, 2turns rfc : f 1mm enameled copper wire,inside dia 5mm, 2turns test circuit for operating items (i , |yfs|, ciss, coss, crss, nf, pg) d(op) .
BB305M 5 200 150 100 50 0 50 100 150 200 25 20 15 10 5 0 0.8 1.6 2.4 3.2 4.0 20 16 12 8 4 0 12345 0 1 2345 25 20 15 10 5 drain current vs. gate1 voltage drain current vs. gate2 to source voltage channel power dissipation pch (mw) ambient temperature ta (?) maximum channel power dissipation curve drain current i (ma) d drain current i (ma) d drain current i (ma) d typical output characteristics gate1 voltage v (v) g1 100 k w r = 220 k g w v = 5 v r = 68 k w ds g v = v = 5 v ds g1 v = 1 v g2s 3 v 2 v v = 4 v @ v = v g2s g1 ds 47 k w 56 k w 68 k w 82 k w 120 k w 150 k w 180 k w 100 k w r = 220 k g w 47 k w 56 k w 68 k w 82 k w 120 k w 150 k w 180 k w 4 v drain to source voltage v (v) ds gate2 to source voltage v (v) g2s ?@
BB305M 6 20 16 12 8 4 0 1 2345 20 16 12 8 4 0 1 2345 v = 5 v r = 82 k w ds g forward transfer admittance vs. gate1 voltage drain current vs. gate1 voltege drain current i (ma) d drain current i (ma) d gate1 voltage v (v) g1 drain current vs. gate1 voltege gate1 voltage v (v) g1 forward transfer admittance vs. gate1 voltage 30 24 18 12 6 0 1 2345 30 24 18 12 6 0 1 2345 w v = 5 v r = 68 k f = 1 khz ds g v = 1 v g2s 2 v w v = 5 v r = 82 k f = 1 khz ds g 3 v 4 v v = 5 v r = 100 k w ds g v = 1 v g2s 2 v 3 v v = 1 v g2s 3 v 2 v 4 v v = 1 v g2s 3 v 2 v 4 v 4 v fs forward transfer admittance |y | (ms) fs forward transfer admittance |y | (ms) gate1 voltage v (v) g1 gate1 voltage v (v) g1
BB305M 7 30 24 18 12 6 0 1 2345 40 35 30 25 20 15 10 10 20 50 100 200 500 1000 40 35 30 25 20 15 10 0 510152025 30 v = 5 v v = 5 v v = 4 v r = variable f = 200 mhz ds g1 g2s g v = 5 v v = 5 v v = 4 v f = 200 mhz ds g1 g2s 0 4 3 2 1 10 20 50 100 200 500 1000 v = 5 v v = 5 v v = 4 v f = 200 mhz ds g1 g2s power gain vs. gate resistance noise figure vs. gate resistance noise figure nf (db) power gain vs. drain current drain current i (ma) d forward transfer admittance vs. gate1 voltage gate resistance r (k w ) g power gain pg (db) power gain pg (db) w v = 5 v r = 100 k f = 1 khz ds g v = 1 v g2s 2 v 3 v 4 v fs forward transfer admittance |y | (ms) gate1 voltage v (v) g1 gate resistance r (k ) g w
BB305M 8 60 50 40 30 20 10 0 0 510152025 30 4 3 2 1 0 0123 4 v = 5 v v = 5 v v = 4 v r = variable f = 200 mhz ds g1 g2s g 30 25 20 15 10 5 0 10 20 50 100 200 500 1000 v = 5 v v = 5 v v = 4 v ds g1 g2s drain current vs. gate resistance gain reduction gr (db) gain reduction vs. gate2 to source voltage gate2 to source voltage v (v) g2s input capacitance ciss (pf) input capacitance vs. gate2 to source voltage noise figure nf (db) noise figure vs. drain current drain current i (ma) d gate resistance r (k ) w g drain current i (ma) d gate2 to source voltage v (v) g2s 5 6 5 4 3 2 1 v = 5 v v = 5 v r = 82 k f = 1 mhz ds g1 g w v = 5 v v = 5 v v = 4 v r = 82 k f = 200 mhz ds g1 g2s g w 123 4 5
BB305M 9 10 5 4 3 2 1.5 1 .8 ? ? ? ? ?0 .6 .4 .2 0 ?2 ?4 ?6 ?8 ? ?.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 s11 parameter vs. frequency scale: 1 / div. 0 30 60 90 120 150 180 ?50 ?0 ?0 ?0 ?20 s21 parameter vs. frequency scale: 0.002 / div. 0 30 60 90 120 150 180 ?50 ?0 ?0 ?0 ?20 s12 parameter vs. frequency 10 5 4 3 2 1.5 1 .8 ? ? ? ? ?0 .6 .4 .2 0 ?2 ?4 ?6 ?8 ? ?.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 s22 parameter vs. frequency test condition : 50 ` 1000 mhz (50 mhz step) ds w g1 v = 5 v , v = 5 v v = 4 v , r = 82 k g2s g test condition : 50 ` 1000 mhz (50 mhz step) ds w g1 v = 5 v , v = 5 v v = 4 v , r = 82 k g2s g test condition : 50 ` 1000 mhz (50 mhz step) ds w g1 v = 5 v , v = 5 v v = 4 v , r = 82 k g2s g test condition : 50 ` 1000 mhz (50 mhz step) ds w g1 v = 5 v , v = 5 v v = 4 v , r = 82 k g2s g
BB305M 10 sparameter (v ds = v g1 = 5v, v g2s = 4v, r g = 82k w , zo = 50 w ) s11 s21 s12 s22 f (mhz) mag ang mag ang mag ang mag ang 50 0.991 ?.8 2.69 174.9 0.00090 91.4 0.991 ?.2 100 0.991 ?.9 2.68 169.3 0.00153 90.5 0.992 ?.8 150 0.982 ?5.4 2.66 163.4 0.00243 73.8 0.991 ?.5 200 0.975 ?0.7 2.62 157.5 0.00293 74.9 0.989 ?.9 250 0.972 ?5.6 2.60 152.0 0.00370 70.1 0.985 ?2.6 300 0.956 ?0.6 2.54 146.3 0.00444 69.0 0.981 ?5.0 350 0.942 ?5.5 2.47 140.9 0.00478 63.7 0.977 ?7.3 400 0.928 ?0.1 2.42 135.7 0.00535 64.8 0.973 ?9.7 450 0.920 ?4.9 2.38 130.5 0.00551 56.8 0.967 ?2.0 500 0.906 ?9.2 2.32 125.7 0.00549 58.6 0.962 ?4.5 550 0.894 ?3.6 2.25 120.8 0.00584 54.4 0.957 ?6.9 600 0.880 ?7.8 2.18 116.2 0.00542 53.3 0.952 ?9.2 650 0.868 ?2.1 2.12 111.5 0.00562 49.5 0.944 ?1.5 700 0.854 ?6.2 2.06 106.8 0.00509 48.6 0.939 ?3.8 750 0.842 ?0.3 2.00 102.5 0.00465 49.7 0.933 ?6.1 800 0.835 ?3.9 1.94 98.4 0.00427 51.6 0.927 ?8.3 850 0.820 ?7.7 1.89 94.0 0.00416 53.3 0.921 ?0.5 900 0.802 ?1.5 1.83 89.6 0.00289 57.9 0.915 ?2.7 950 0.801 ?4.7 1.78 85.6 0.00288 72.9 0.909 ?4.9 1000 0.789 ?7.9 1.73 82.1 0.00241 78.9 0.904 ?7.1
BB305M 11 package dimensions 0.16 0 ?0.1 + 0.1 ?0.06 0.95 0.85 1.8 0.2 0.65 1.5 0.15 0.65 1.1 + 0.2 ?0.1 0.95 0.95 1.9 0.2 2.95 0.2 0.4 + 0.1 ?0.05 0.6 + 0.1 ?0.05 2.8 + 0.2 ?0.6 0.3 0.4 + 0.1 ?0.05 hitachi code jedec eiaj mass (reference value) mpak-4 conforms 0.013 g 0.4 + 0.1 ?0.05 as of january, 2001 unit: mm
BB305M 12 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0

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