dap236u / DAP236K diodes band switching diode dap236u / DAP236K z z z z applications high speed switching z z z z features 1) multiple diodes with common anode configuration. (umd3, smd3) 2) high reliability. z z z z construction silicon epitaxial planar z z z z circuit z z z z external dimensions (units : mm) (all leads have the same dimensions) 2.8?.2 1.6 0.3 0.6 0.15 0.4 0 0.1 1.1 0.8?.1 2.9?.2 1.9?.2 0.95 0.95 + 0.2 ? 0.1 + 0.2 ? 0.1 + 0.1 ? 0.06 + 0.1 ? 0.05 rohm : smd3 eiaj : sc- 59 jedec : sot-346 x (all leads have the same dimensions) 2.1?.1 1.25?.1 0.1min. 0 0.1 0.15?.05 0.3?.1 2.0?.2 1.3?.1 0.65 0.65 0.9?.1 0.3 0.6 rohm : umd3 eiaj : sc-70 jedec : sot-323 x dap236u DAP236K z z z z absolute maximum ratings (ta=25 c) parameter symbol limits unit v r 35 v pd 150 mw tj 125 ?c tstg ? 55 + 125 ?c dc reverse voltage power dissipation junction temperature storage temperature
dap236u / DAP236K diodes z z z z electrical characteristics (ta=25 c) parameter symbol min. typ. max. unit conditions v f ?? 1.0 v i f =10ma i r ?? 10 na v r =25v c t ?? 1.2 pf v r =6v, f=1mhz r f ?? 0.90 ? i f =2ma, f=100mhz forward voltage reverse current capacitance between terminals forward operating resistance z z z z electrical characteristic curves (ta=25 c) 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1 100m 10m 1m 100 10 1 100n forward current : i f ( ma) forward voltage : v f ( v) fig. 1 forward characteristics 0 1020304050 0.1 1.0 10.0 reverse current : i r ( na) reverse voltage : v r ( v) fig. 2 reverse characteristics 0 0 1 2 3 10 20 30 reverse voltage : v r ( v) capacitance between terminals : c t ( pf) fig. 3 capacitance between terminals characteristics f=100mhz 12 510 0.2 0.5 1.0 0 forward operating resistance : r f ( ? ) forward current : i f ( ma) fig. 4 forward operating resistance characteristics
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