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  1 power mosfet features ? halogen-free according to iec 61 249-2-21 definition ? surface mount ? low-profile through-hole ? available in tape and reel ? dynamic dv/dt rating ? 150 c operating temperature ?fast switching ? fully avalanche rated ? compliant to rohs directive 2002/95/ec no tes a. repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. v dd = 50 v, starting t j = 25 c , l = 2.7 mh, r g = 25 ? , i as = 18 a (see fig. 12). c. i sd ? 20 a, di/dt ? 150 a/s, v dd ? v ds , t j ? 15 0 c. d. 1.6 mm from case. pr od uct summary v ds (v ) 2 00 r ds(on ) ( ? )v gs = 10 v 0.09 q g (max.) (nc) 70 q gs (nc) 13 q gd (nc ) 39 conf iguration single n-channel mosfet g d s d 2 pak (to-263) g d s i 2 pak (to-262) absolute maxim u m ratings (t c = 2 5 c, unless otherwise noted) para me te r s ymbol limit unit drain-source voltage v ds 200 v gate-source v o ltage v gs 20 continuous drain cu rrent v gs at 10 v t c = 25 c i d 20 a t c = 100 c 13 pul sed drain current a, e i dm 72 linear derating factor 1.0 w /c single pulse avalanche energy b, e e as 580 mj a valanche current a i ar 20 a r epetiitive avalanche energy a e ar 13 mj maxi mum power dissipation t c = 25 c p d 3.1 w t a = 25 c 130 p eak diode recovery dv/dt c, e dv/dt 5.0 v /ns oper ating junction and storage temperature range t j , t stg - 55 to + 150 c soldering recommendations (p eak temperature) for 10 s 300 d * p b containing terminations are not rohs compliant, exemptions may apply www.din-tek.jp dt w2070
2 not e a. when mounted on 1" square pcb (fr-4 or g-10 material). notes a. repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. pulse width ? 300 s; duty cycle ? 2 %. c. uses irf640/sihf640 data and test conditions. t h ermal resistance ratings par a meter symb ol typ. max. unit maximum junction-to-ambient (pcb mounted, steady-state) a r thja -4 0 c /w maximum junction-to-case (drain) r thj c -1 . 0 specifi c ations (t j = 2 5 c, unless otherwise noted) parameter s y mbol test condi tions min. typ. max. unit sta t ic drain-source brea kdown voltage v ds v gs = 0 v, i d = 250 a 200 - - v v ds te m perature coefficient ? v ds /t j reference to 25 c, i d = 1 ma c -0 . 29-v/c gate-source threshold voltage v gs(t h) v ds = v gs , i d = 250 a 2 .0 - 4.0 v gate-source leakage i gss v gs = 20 v - - 100 na zero gate voltage drain current i dss v ds = 200 v, v gs = 0 v - - 25 a v ds = 160 v, v gs = 0 v, t j = 125 c - - 250 drain-source on-state resistance r ds(on ) v gs = 10 v i d = 11 a b - - 0.09 ? forward transconductance g fs v ds = 50 v, i d = 11 a d 6. 7 - - s dynam i c input capacitance c iss v gs = 0 v, v ds = 25 v , f = 1.0 mhz, see fig. 5 d - 1300 - pf output capacitance c oss - 430 - reverse transfer capacitance c rss - 130 - total gate charge q g v gs = 10 v i d = 20 a, v ds = 160 v, se e fig. 6 and 13 b, c --7 0 nc gate-source charge q gs -- 1 3 gate-drain charge q gd -- 3 9 turn-on delay time t d(on ) v dd = 100 v, i d = 20 a, r g = 9.1 ? , r d = 5.4 ? , see fig. 1 0 b, c -1 4 - ns rise time t r -5 1 - turn-off delay time t d(of f) -4 5 - fall time t f -3 6 - dr ain-source body diode characteristics continuous source-dr ain diode current i s mosfet symbol show ing the integral reverse p - n junction diode --20 a pulsed diode forward current a i sm -- 7 2 body diode voltage v sd t j = 25 c , i s = 20 a , v gs = 0 v b -- 2 .0v body diode reverse recovery time t rr t j = 2 5 c, i f = 20 a, di/dt = 100 a /s b, c - 300 610 ns body diode reverse recovery charge q rr -3 . 47.1c forward turn-on time t on intrinsic turn-on time is negl igible (turn-on is dominated by l s and l d ) s d g www.din-tek.jp dt w2070
3 t y pical characteristics (25 c, unless otherwise noted) fig. 1 - ty pical output characteristics, t j = 25 c fig. 2 - typical output characteristics, t j = 1 75 c fig. 3 - typical transfer characteristics fig. 4 - normalized on-r esistance vs. temperature 91037_01 bottom to p v gs 15 v 10 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v 4.5 v 20 s pulse width t c = 25 c 4.5 v v ds , dr ain-to-source voltage (v) i d , dr ain current (a) 10 0 10 1 10 1 10 0 10 -1 10 1 10 0 10 -1 10 0 10 1 v ds , dr ain-to-source voltage (v) i d , dr ain current (a) bottom to p v gs 15 v 10 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v 4.5 v 20 s pulse width t c = 150 c 91037_02 4.5 v 20 s pulse width v ds = 50 v 10 1 10 0 10 -1 i d , dr ain current (a) v gs , gate-to-source v oltage (v) 5 6 78910 4 25 c 150 c 91037_03 i d = 20 a v gs = 10 v 3.0 0.0 0.5 1.0 1.5 2.0 2.5 t j , j unction temperature (c) r ds(on) , dr ain-to-source on resistance (nor malized) 91037_04 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 www.din-tek.jp dt w2070
4 fig. 5 - typical capacitance vs. drain-to-source voltage fig. 6 - typical gate charge vs. gate-to-source voltage fig. 7 - typical source-drain diode forward voltage fig. 8 - maximum safe operating area 3000 2500 2000 1500 0 500 1000 10 0 10 1 capacitance (pf) v ds , dr ain-to-source voltage (v) c iss c rss c oss v gs = 0 v , f = 1 mhz c iss = c gs + c gd , c ds shor ted c rss = c gd c oss = c ds + c gd 91037_05 q g , t otal gate charge (nc) v gs , gate-to-source v oltage (v) 20 16 12 8 0 4 0 15 75 60 45 30 v ds = 40 v v ds = 100 v f or test circuit see figure 13 v ds = 160 v 91037_06 i d = 20 a 10 1 10 0 v sd , source-to-dr ain voltage (v) i sd , re v erse drain current (a) 0.50 1.30 1.10 0.90 0.70 25 c 150 c v gs = 0 v 91037_07 1.50 10 s 100 s 1 ms 10 ms oper ation in this area limited by r ds(on) v ds , dr ain-to-source voltage (v) i d , dr ain current (a) t c = 25 c t j = 150 c single pulse 10 2 0.1 2 5 0.1 2 5 1 2 5 10 2 5 25 1 25 10 25 10 2 2 5 10 3 91037_08 10 3 www.din-tek.jp dt w2070
5 fig. 9 - maximum drain current vs. case temperature fig. 10a - switching time test circuit fig. 10b - switching time waveforms fig. 11 - maximum effective transient thermal impedance, junction-to-case i d , dr ain current (a) t c , case t emperature (c) 0 5 10 14 18 22 25 150 125 100 75 50 91037_09 pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10 v + - v ds v dd v ds 90 % 10 % v gs t d(on) t r t d(off) t f 10 1 0.1 10 -2 10 -5 10 -4 10 -3 10 -2 0.1 1 10 p dm t 1 t 2 t 1 , rectangular pulse dur ation (s) thermal response (z thjc ) notes: 1. duty f actor, d = t 1 /t 2 2. p eak t j = p dm x z thjc + t c single pulse (ther mal response) 0 ? 0.5 0.2 0.1 0.05 0.02 0.01 91037_11 10 -3 www.din-tek.jp dt w2070
6 fi g. 12a - unclamped inductive test circuit fig. 12b - unclamped inductive waveforms fig. 12c - maximum avalanche energy vs. drain current fig. 13a - basic gate charge waveform fig. 13b - gate charge test circuit a r g i as 0.01  t p d.u.t. l v ds + - v dd driver 15 v 20 v i as v ds t p 1400 0 400 600 800 1000 1200 25 150 125 100 75 50 star ting t j , j unction temperature (c) e as , single pulse energy (mj) bottom to p i d 8.0 a 11.0 a 20.0 a v dd = 50 v 91037_12c 200 q gs q gd q g v g charge 10 v d.u.t. 3 ma v gs v ds i g i d 0.3 f 0.2 f 50 k  12 v current regulator current sampling resistors same type as d.u.t. + - zzzglqwhnms   '7 :
7 fig. 14 - for n-chann el p.w. period di/dt diode recovery dv/dt ripple 5 % body diode forward drop re-applied voltage rever s e recovery current body diode forward current v gs = 10 v a i s d driver gate drive d.u.t. l s d waveform d.u.t. v d s waveform inductor current d = p.w. period + - + + + - - - peak dio d e recovery d v/ d t test circuit v dd ? dv/dt controlled by r g ? driver s ame type a s d.u.t. ? i s d controlled by duty factor d ? d.u.t. - device under te s t d.u.t. circuit layout con s ideration s ? low s tray inductance ? g round plane ? low leakage inductance current tran s former r g note a. v gs = 5 v for logic level device s v dd www.din-tek.jp dt w2070
1 to-263ab (high volt age) no tes 1. dimensio ning a nd toler ancing per asme y14.5m-1994. 2. dimensions are shown in millimeters (inches). 3. dimension d and e do not include mold flash. mold flash shal l not exceed 0.127 mm (0.005") per side. these dimensions are measured at the outmost extremes of the plasti c body at datum a. 4. thermal pad contour optional within dimension e, l1, d1 and e1. 5. dimension b1 and c1 apply to base metal only. 6. datum a and b to be determined at datum plane h. 7. outline conforms to jedec outline to to-263ab. 5 4 1 3 l1 l2 d b b e h b a detail a a a c c2 a 2 x e 2 x b 2 2 x b 0.010 a b mm 0.004 b m base metal plating b 1, b 3 ( b , b 2) c1 (c) section b - b and c - c scale: none lead tip 4 34 (dat u m a) 2 c c b b 5 5 v ie w a - a e1 d1 e 4 4 b h seating plane ga u ge plane 0 to 8 detail ?a? rotated 90 cw scale 8 :1 l3 a1 l4 l millimeters inches m illi meters inches dim. min. max. min. max. dim. min. max. min. max. a 4.06 4.83 0.160 0.190 d1 6.86 - 0.270 - a1 0.00 0.25 0.000 0.010 e 9.65 10.67 0.380 0.420 b 0.51 0.99 0.020 0.039 e1 6.22 - 0.245 - b1 0.51 0.89 0.020 0.035 e 2.54 bsc 0.100 bsc b2 1.14 1.78 0.045 0.070 h 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 l 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 l1 - 1.65 - 0.066 c1 0.38 0.58 0.015 0.023 l2 - 1.78 - 0.070 c2 1.14 1.65 0.045 0.065 l3 0.25 bsc 0.010 bsc d 8.38 9.65 0.330 0.380 l4 4.78 5.28 0.188 0.208 ecn: s-82110-rev. a, 15-sep-08 d w g: 5970 www.din-tek.jp dt w2070
1 recommended minimum pads for d 2 pak: 3-lead 0.635 (16.129) recommended minimum pads dimensions in inches/(mm) 0.420 (10.668) 0.355 (9.017) 0.145 (3.683) 0.135 (3.429) 0.200 (5.080) 0.050 (1.257) www.din-tek.jp dt w2070
1 disclaimer all pro duct, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertech nology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. www.din-tek.jp dt w2070


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