52 vtp process photodiodes VTP1232 (also available in infrared transmitting visible blocking version) product description this photodiode features the largest detection area available in a clear, endlooking t-1? package. combined with excellent dark current, it can fulfill the demands of many difficult applications. package dimensions inch (mm) case 26 t-1? chip active area: .0036 in 2 (2.326 mm 2 ) absolute maximum ratings storage temperature: -40c to 100c operating temperature: -40c to 100c electro-optical characteristics @ 25c (see also vtp curves, pages 45-46) symbol characteristic test conditions VTP1232 units min. typ. max. i sc short circuit current h = 100 fc, 2850 k 100 a tc i sc i sc temperature coefficient 2850 k 0.20 %/c re responsivity 880 nm 0.06 0.076 a/(w/cm 2 ) v oc open circuit voltage h = 100 fc, 2850 k .42 mv tc v oc v oc temperature coefficient 2850 k -2.0 mv/c i d dark current h = 0, vr = 10 v 25 na c j junction capacitance h = 0, v = 0 v .18 .30 nf range spectral application range 400 1100 nm p spectral response - peak 920 nm s r sensitivity @ peak 0.60 a/w perkinelmer optoelectronics, 10900 page ave., st. louis, mo 63132 usa phone: 314-423-4900 fax: 314-423-3956 web: w ww.perkinelmer.com/opto
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