1/3 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.03 - rev. a medium power transistor (60v, 2a) 2sc5866 ? features ? dimensions (unit : mm) 1) high speed switching. (tf : typ. : 35ns at i c = 2a) 2) low saturation voltage, typically (typ. : 200mv at i c = 1.0m, i b = 0.1a) 3) strong discharge power for inductive load and capacitance load. 4) complements the 2sa2094 ? applications low frequency amplifier high speed switching ? structure npn silicon epitaxial planar transistor ? packaging specifications taping 2sc5866 type tl 3000 package basic ordering unit (pieces) code ? absolute maximum ratings (ta=25 ?c) parameter v v v a mw ? 1 pw=10ms ? 2 each terminal mounted on a recommended land. ? 2 ? 1 c a c v cbo v ceo i c p c tj v ebo i cp tstg symbol 60 60 6 2 4 500 150 ?55 to +150 limits unit collector-base voltage collector-emitter voltage emitter-base voltage collector current power dissipation junction temperature range of storage temperature each lead has same dimensions abbreviated symbol : vl tsmt3 ( 2 ) ( 1 ) ( 3 ) 0 0.1 0.16 0.85 1.0max 0.7 2.9 2.8 1.9 1.6 0.95 0.95 0.4 0.3 0.6 (1)base (2)emitter (3)collector
2/3 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.03 - rev. a data sheet 2sc5866 ? electrical characteristics (ta=25 qc) ? 2 ? 1 ? 1 ?1 non repetitive pulse ?2 see switching charactaristics measurement circuits parameter symbol bv ebo i cbo i ebo v ce(sat) ft h fe c ob t on min. 6 ? ? ? 120 ? ? ? ? ? 200 ?? 10 50 ? 1.0 1.0 ? 200 500 390 ? ? ? i e = 100a v ce = 2v, i c = 100ma v cb = 40v v eb = 4v i c = 1a, i b = 0.1a i c = 2a, i b1 = 2000ma i b2 = ? 200ma v cc 25v v ce = 10v, i e = ? 100ma, f = 10mhz v cb = 10v, i e = 0ma, f = 1mhz v a a mhz mv pf ns t stg ? 120 ? ns tf ? 35 ? ns typ. max. unit conditions bv ceo 60 ?? v i c = 1ma collector?emitter breakdown voltage collector cut-off current dc current gain transition frequency collector output capacitance turn-on time storage time fall time emitter cut-off current collector?emitter staturation voltage bv cbo 60 ?? i c = 100a v collector?base breakdown voltage emitter?base breakdown voltage ? h fe rank qr 120-270 180-390 ? electrical characteristic curves fig.1 switching time 1 0.01 0.1 1 0 1000 100 10 collector current : i c (a) switching time (ns) ta=25c v cc =25v i c /i b =10/1 tstg tf ton fig.2 dc current gain vs. collecto r current collector current : i c (a) 0.001 0.01 0.1 10 1 1 10 100 1000 ta=125c ta=25c v ce =2v dc current gain : h fe ta= ?40c 0.001 0.01 0.1 1 0 1 1 10 100 1000 collector current : i c (a) dc current gain : h fe v ce =5v v ce =3v v ce =2v fig.3 dc current gain vs. collector current ta=25c 0.001 0.01 0.1 0.01 0.1 1 10 collector saturation voltage : v ce (sat )(v) collector current : i c (a) 10 1 fig.4 collector-emitter saturation voltag e vs. collector current i c /i b =10/1 ta=125c ta=25c ta= ?40c 0.001 0.1 0.01 10 1 0.01 0.1 1 10 collector current : i c ( a) collector saturation voltage : v ce ( sat)(v) f ig.5 collector-emitter saturation voltag e vs. collector current i c /i b =10/1 i c /i b =20/1 ta=25c collector current : i c (a) base emitter saturation voltage : v be (sat ) (v) fig.6 base-emitter saturation voltag e vs. collector current 0.001 0.01 0.1 10 1 ta=125c ta=25c 10 1 0.1 0.01 i c /i b =10/1 ta= ?40c
3/3 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.03 - rev. a data sheet 2sc5866 0.01 0.1 10 1 collector current : i c (a) base to emitter voltage : v be (v) 0 0.5 1 1 .5 fig.7 ground emitter propagation characteristics ta=125c ta=25c v ce =2v ta= ?40c 1000 transition frequency : f t (mhz) emitter current : i e (a ) ?1 0 ?1 ?0.1 ?0.01 ?0.001 100 10 1 fig.8 transition frequency ta=25c v ce =10v 100 collector output capacitance : c ob ( p f) collector to base voltage : v cb ( v) 10 0 10 1 0.1 10 1 fig.9 collector output capacitanc e ta=25c f=1mhz ? switching characteristics measurement circuits collector current waveform base current waveform i b1 i b1 90% 10% i b2 i b2 i c v in p w i c r l =12.5 v cc 25 v p w 50 s duty cycle 1% ton tstg tf
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