symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 17.4 30 50 60 r jc 4 7.5 w maximum junction-to-case b steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w absolute maximum ratings t a =25c unless otherwise noted v v 25 gate-source voltage drain-source voltage 75 pulsed drain current c power dissipation b t c =25c continuous drain current g maximum units parameter t c =25c t c =100c i d 10 10 20 junction and storage temperature range a p d c 20 10 -55 to 175 t c =100c avalanche current c 10 repetitive avalanche energy l=0.1mh c 15 a mj w t a =70c 1.3 power dissipation a t a =25c p dsm 2.1 aod446 n-channel enhancement mode field effect transistor features v ds (v) = 75v i d = 10 a (v gs = 20v) r ds(on) < 130 m ? (v gs = 20v) @ 5a r ds(on) < 140 m ? (v gs = 10v) r ds(on) < 165 m ? (v gs = 4.5v) general description the aod446 uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. this device is suitable for use in pwm, load switching and general purpose applications. standard product aod446 is pb-free (meets rohs & sony 259 specifications). aod446l is a green product ordering option. aod446 and aod446l are electrically identical. g d s g d s t o-252 d-pak t op view drain connected to t ab alpha & omega semiconductor, ltd.
aod446 symbol min typ max units bv dss 75 v 1 t j =55c 5 i gss 100 na v gs(th) 1 2.4 3 v i d(on) 20 a 100 130 t j =125c 180 220 105 140 m ? 120 165 m ? g fs 9s v sd 0.79 1 v i s 10 a c iss 293 350 pf c oss 51 pf c rss 20 pf r g 2.2 3 ? q g (10v) 5.2 6.5 nc q g (4.5v) 2.46 3.5 nc q gs 1nc q gd 1.34 nc t d(on) 4.6 ns t r 2.3 ns t d(off) 14.7 ns t f 1.7 ns t rr 25 30 ns q rr 27 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice body diode reverse recovery time drain-source breakdown voltage on state drain current i d =10ma, v gs =0v v gs =10v, v ds =5v v gs =20v, i d =5a reverse transfer capacitance i f =5a, di/dt=100a/ s v gs =0v, v ds =30v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs , i d =250 a v ds =60v, v gs =0v v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage r ds(on) static drain-source on-resistance m ? v gs =10v, i d =5a i s =1a, v gs =0v v ds =5v, i d =10a v gs =4.5v, i d =2a gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =37.5v, i d =5a gate source charge gate drain charge total gate charge body diode reverse recovery charge i f =5a, di/dt=100a/ s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =37.5v, r l =7.5 ? , r gen =3 ? a : the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150c. the value in any given application depends on the user's specific board design, and the maximum temperature of 175c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c: repetitive rating, pulse width limited by junction temperature t j(max) =175c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =175c. g. the maximum current rating is limited by bond-wires. h. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev2: august 2005 alpha & omega semiconductor, ltd.
aod446 typical electrical and thermal characteristic s 0 2 4 6 8 10 2 2.5 3 3.5 4 4.5 5 v gs (volts) figure 2: transfer characteristics i d (a) 80 100 120 140 160 180 200 220 0246810 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) v gs =20v 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =4.5v, 2a v gs =10v, 5a v gs =20v, 5a 100 120 140 160 180 200 220 240 260 46810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =5a 25c 125c 0 5 10 15 20 25 30 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =4v 3.5v 6v 7v 10v 4.5v 5v alpha & omega semiconductor, ltd.
aod446 typical electrical and thermal characteristic s 0 2 4 6 8 10 0246 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 50 100 150 200 250 300 350 400 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 100 s 10ms 1ms dc r ds(on) limited t j(max) =175c, t a =25c v ds =37.5v i d =5a single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =7.5c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c t a =25c 10 s alpha & omega semiconductor, ltd.
aod446 typical electrical and thermal characteristic s 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note h) z ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =60c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 2 4 6 8 10 12 0.00001 0.0001 0.001 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current 0 5 10 15 20 25 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) 0 2 4 6 8 10 12 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating i d (a) dd d a v bv i l t ? ? = t a =25c 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c alpha & omega semiconductor, ltd.
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