? semiconductor components industries, llc, 2000 may, 2000 rev. 5 607 publication order number: mkp1v120/d
preferred device
bidirectional triggers bidirectional devices designed for direct interface with the ac power line. upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage onstate. conduction will continue like a triac until the main terminal current drops below the holding current. the plastic axial lead package provides high pulse current capability at low cost. glass passivation insures reliable operation. applications are: ? high pressure sodium vapor lighting ? strobes and flashers ? ignitors ? high voltage regulators ? pulse generators ? used to trigger gates of scr's and triacs ? indicates ul registered e file #e116110 ? device marking: logo, device type, e.g., mkp1v120, date code maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive offstate voltage (sine wave, 50 to 60 hz, t j = 40 to 125 c) mkp1v120, mkp1v130, mkp1v160 MKP1V240 v drm , v rrm 90 180 volts on-state current rms (t l = 80 c, lead length = 3/8 , all conduction angles) i t(rms) 0.9 amp peak nonrepetitive surge current (60 hz one cycle sine wave, t j = 125 c) i tsm 4.0 amps operating junction temperature range t j 40 to +125 c storage temperature range t stg 40 to +150 c sidacs 0.9 amperes rms 120 thru 240 volts preferred devices are recommended choices for future use and best overall value. device package shipping ordering information mkp1v120rl do41 tape and reel 5k/reel http://onsemi.com mt1 mt2 do41 plastic axial (no polarity) case 059a mkp1v130rl do41 tape and reel 5k/reel mkp1v160 do41 bulk 1k/bag mkp1v160rl do41 tape and reel 5k/reel MKP1V240 do41 bulk 1k/bag MKP1V240rl do41 tape and reel 5k/reel ()
mkp1v120 series http://onsemi.com 608 thermal characteristics characteristic symbol max unit thermal resistance, junction to lead lead length = 3/8 r q jl 40 c/w lead solder temperature (lead length 1/16 from case, 10 s max) t l 260 c electrical characteristics (t c = 25 c unless otherwise noted; electricals apply in both directions) characteristic symbol min typ max unit off characteristics repetitive peak offstate current t j = 25 c (50 to 60 hz sine wave) v drm = 90 v, mkp1v120, mkp1v130 and mkp1v160 v drm = 180 v, MKP1V240 i drm e e 5.0 m a on characteristics breakover voltage i bo = 35 m a mkp1v120 35 m a mkp1v130 200 m a mkp1v160 35 m a MKP1V240 v bo 110 120 150 220 e e 130 140 170 250 volts peak onstate voltage (i tm = 1 a peak, pulse width 300 m s, duty cycle 2%) v tm e 1.3 1.5 volts dynamic holding current (sine wave, 50 to 60 hz, r l = 100 ohm) i h e e 100 ma switching resistance (sine wave, 50 to 60 hz) r s 0.1 e e k w dynamic characteristics critical rateofrise of onstate current, critical damped waveform circuit (i pk = 130 amps, pulse width = 10 m sec) di/dt e 120 e a/ m s
mkp1v120 series http://onsemi.com 609 + current + voltage v tm i h symbol parameter i drm off state leakage current v drm off state repetitive blocking voltage v bo breakover voltage i bo breakover current i h holding current v tm on state voltage i tm peak on state current voltage current characteristic of sidac v drm i drm i tm slope = r s v (bo) r s (v (bo) v s ) (i s i (bo) ) i (bo) i s v s (bidirectional device) 0.8 0 i t(rms) , onstate current (amps) 140 120 40 t a , maximum ambient temperature ( c) 0.4 2.0 3.0 0 v t , instantaneous onstate voltage (volts) 0.3 0.5 0.2 0.1 1.0 t 4.0 0.2 0.6 i 100 0.7 1.0 130 , maximum allowable lead temperature ( c) l 100 0 1.0 0.6 0.2 40 i 20 60 0.4 0.8 , onstate current (amps) t(rms) 0.2 0.6 0 i t(rms) , onstate current (amps) 0.50 0.75 0.25 0.4 0.8 p 1.00 1.25 t j = 25 c conduction angle = 180 c 1.6 1.2 1.0 1.4 2.0 1.8 110 90 80 60 70 50 80 120 140 5.0 3.0 5.0 2.0 7.0 10 , instantaneous onstate current (amps) t 1.0 , power dissipation (watts) rms t j = 25 c 125 c t j = 125 c sine wave conduction angle = 180 c assembled in pcb lead length = 3 / 8 t j = 125 c sine wave conduction angle = 180 c t l 3 / 8 3 / 8 figure 1. maximum lead temperature figure 2. maximum ambient temperature figure 3. typical onstate voltage figure 4. typical power dissipation
mkp1v120 series http://onsemi.com 610 thermal characteristics figure 5. thermal response t, time (ms) 10 0.1 0.07 0.03 0.02 0.01 5.0 0.2 0.5 1.0 2.0 0.05 0.1 0.2 r(t), transient thermal resistance (normalized) 0.3 0.5 0.7 1.0 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k the temperature of the lead should be measured using a thermocouple placed on the lead as close as possible to the tie point. the thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steadystate conditions are achieved. using the measured value of t l , the junction temperature may be determined by: t j = t l + t jl z jl (t) = r jl ? r(t) t jl = p pk r jl [r(t)] where: t jl = the increase in junction temperature above the lead temperature r(t) = normalized value of transient thermal resistance at time, t from this figure. for example, r(t p ) = normalized value of transient resistance at time t p . time t p typical characteristics figure 6. typical breakover voltage figure 7. typical holding current figure 8. pulse rating curve t j , junction temperature ( c) 60 0.8 0.4 100 0.1 t w , pulse width (ms) 100 10 1.0 i 40 20 100 140 0.6 1.0 1.2 10 t j , junction temperature ( c) 100 60 0.9 0.8 v 40 40 20 0 20 1.0 1.4 , breakover voltage (normalized) bo 1.0 i pk , peak current (amps) 80 60 120 140 , holding current (normalized) h 120 80 060 40 20 10% tw i pk
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