MP4501 2002-11-20 1 toshiba power transistor module silicon npn epitaxial type (darlington power transistor 4 in 1) MP4501 high power switching applications. hammer drive, pulse motor drive and inductive load switching. package with heat sink isolated to lead (sip 12 pin) high collector power dissipation (4 devices operation) : p t = 5 w (ta = 25c) high collector current: i c (dc) = 3 a (max) high dc current gain: h fe = 2000 (min) (v ce = 2 v, i c = 1.5 a) diode included for absorbing fly-back voltage. maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo 120 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 6 v dc i c 3 collector current pulse i cp 6 a continuous base current i b 0.5 a collector power dissipation (1 device operation) p c 3.0 w ta = 25c 5.0 collector power dissipation (4 devices operation) tc = 25c p t 25 w isolation voltage v isol 1000 v junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c array configuration industrial applications unit: mm jedec D jeita D toshiba 2-32b1a weight: 6.0 g (typ.) 1 r1 r2 7 r1 4.5 k ? r2 300 ? 6 12 8 5 2 3 10 49 11
MP4501 2002-11-20 2 thermal characteristics characteristics symbol max unit thermal resistance of junction to ambient (4 devices operation, ta = 25c) r th (j-a) 25 c/w thermal resistance of junction to case (4 devices operation, tc = 25c) r th (j-c) 5.0 c/w maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) t l 260 c electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = 120 v, i e = 0 a D D 10 a collector cut-off current i ceo v ce = 100 v, i b = 0 a D D 10 a emitter cut-off current i ebo v eb = 6 v, i c = 0 a 0.5 D 2.5 ma collector-base breakdown voltage v (br) cbo i c = 1 ma, i e = 0 a 120 D D v collector-emitter breakdown voltage v (br) ceo i c = 10 ma, i b = 0 a 100 D D v h fe (1) v ce = 2 v, i c = 1.5 a 2000 D 15000 dc current gain h fe (2) v ce = 2 v, i c = 3 a 1000 D D D collector-emitter v ce (sat) i c = 1.5 a, i b = 3 ma D D 1.5 saturation voltage base-emitter v be (sat) i c = 1.5 a, i b = 3 ma D D 2.0 v transition frequency f t v ce = 2 v, i c = 0.5 a D 60 D mhz collector output capacitance c ob v cb = 10 v, i e = 0 a, f = 1 mhz D 30 D pf turn-on time t on D 0.3 D storage time t stg D 2.0 D switching time fall time t f i b1 = ? i b2 = 3 ma, duty cycle 1% D 0.4 D s emitter-collector diode ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit maximum forward current i fm D D D 3 a surge current i fsm t = 1 s, 1 shot D D 6 a forward voltage v f i f = 1 a, i b = 0 a D 1.2 1.8 v reverse recovery time t rr D 1.0 D s reverse recovery charge q rr i f = 3 a, v be = ? 3 v, di f /dt = ? 50 a/s D 5 D c i b1 20 s v cc = 30 v output 20 ? i b2 i b1 input i b2
MP4501 2002-11-20 3 flyback-diode rating and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit maximum forward current i fm D D D 3 a reverse current i r v r = 120 v D D 0.4 a reverse voltage v r i r = 100 a 120 D D v forward voltage v f i f = 0.5 a D D 1.8 v
MP4501 2002-11-20 4 base current i b (ma) v ce ? i b collector-emitter voltage v ce (v) collector current i c (a) v ce (sat) ? i c collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) v be (sat) ? i c base-emitter saturation voltage v be (sat) (v) collector current i c (a) h fe ? i c dc current gain h fe collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) base-emitter voltage v be (v) i c ? v be collector current i c (a) 0.3 1 3 10 0.1 10 0.3 0.5 1 3 5 common emitter i c /i b = 500 25 tc = ? 55c 100 0.3 1 3 10 0.1 10 0.3 0.5 1 3 5 common emitter i c /i b = 500 25 tc = ? 55c 100 2 0 1 2 3 4 5 6 7 1 0 6 5 4 3 common emitter tc = 25c 0.5 i b = 0.15 ma 0.2 0.3 10 1 3 0 0 0 2 1 6 5 4 3 0.4 0.8 1.2 1.6 2.0 2.4 2.8 25 tc = 100c ? 55 common emitter v ce = 2 v 300 0.05 0.1 0.3 1 3 10 500 1000 3000 5000 10000 20000 common emitter v ce = 2 v 25 tc = 100c ? 55 0 0.1 0.3 1 10 30 100 3 300 2.4 0.4 1.6 2.0 0.8 1.2 common emitter tc = 25c 0.5 1 2 3 4 5 i c = 6 a 0.1
MP4501 2002-11-20 5 ambient temperature ta (c) p t ? ta total power dissipation p t (w) total power dissipation p t (w) ? t j ? p t junction temperature increase ? t j (c) pulse width t w (s) 40 80 120 160 0 8 2 4 6 200 0 (1) (2) (3) (4) (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation attached on a circuit board circuit board (3) 0 160 2 40 80 120 4 6 8 10 0 (4) (2) (1) attached on a circuit board (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation circuit board collector-emitter voltage v ce (v) safe operating area collector current i c (a) 0.01 0.3 1 3 10 0.03 0.05 0.1 0.3 0.5 1 3 5 10 *: single nonrepetitive pulse tc = 25c curves must be derated linearly with increase in temperature. 30 100 i c max (pulsed)* 100 s* v ceo max 10 ms* 1 ms* r th ? t w transient thermal resistance r th (c/w) 0.001 0.01 0.1 1 10 100 1000 0.3 -no heat sink and attached on a circuit board- (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation curves should be applied in thermal limited area. (single nonrepetitive pulse) below figure show thermal resistance per 1 unit versus pulse width. (4) (1) 1 3 10 30 100 300 circuit board (3) (2)
MP4501 2002-11-20 6 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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