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data sheet the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec compound semiconductor devices representative for availability and additional information. photocoupler ps2732-1,ps2733-1 high collector to emitter voltage sop multi photocoupler - nepoc series - document no. pn10248ej01v0ds (1st edition) (previous no. p11312ej3v0ds00) date published february 2003 cp(k) printed in japan ? ? ? ? nec compound semiconductor devices 1994, 2003 the mark ? ? ? ? shows major revised points. description the ps2732-1 and ps2733-1 are optically coupled isolators containing a gaas light emitting diode and an npn silicon darlington-connected phototransistor. this package is sop (small outline package) type and has shield effect to cut off ambient light. it is designed for high density mounting applications. features ? high isolation voltage (bv = 2 500 vr.m.s.) ? high collector to emitter voltage (v ceo = 300 v: ps2732-1) (v ceo = 350 v: ps2733-1) ? sop (small outline package) type ? high current transfer ratio (ctr = 4 000 % typ.) ? ordering number of taping product : PS2732-1-F3, f4, ps2733-1-f3, f4 ? ul approved: file no. e72422 (s) ? vde0884 approved (option) applications ?hybrid ic ? telephone/telegraph receiver ?fax ordering information part number package safety standard approval standard products ps2732-1, ps2733-1 4-pin sop ? ul approved ps2732-1-v, ps2733-1-v 4-pin sop vde0884 approved products (option)
data sheet pn10248ej01v0ds 2 ps2732-1,ps2733-1 package dimensions (in millimeters) 4.00.5 7.00.3 4.4 0.50.3 0.15 +0.10 C0.05 top view 1. anode 2. cathode 3. emitter 4. collector 43 12 2.0 0.10.1 2.10.2 2.54 0.4 +0.10 C0.05 0.25 m ps2732-1 ps2733-1
data sheet pn10248ej01v0ds 3 ps2732-1,ps2733-1 absolute maximum ratings (t a = 25 c, unless otherwise specified) parameter symbol ratings unit ps2732-1 ps2733-1 diode forward current (dc) i f 50 ma reverse voltage v r 6v power dissipation derating d p d / c0.8mw/ c power dissipation p d 80 mw peak forward current *1 i fp 1a transistor collector to emitter voltage v ceo 300 350 v emitter to collector voltage v eco 0.3 v collector current i c 150 ma power dissipation derating d p c / c1.5mw/ c power dissipation p c 150 mw isolation voltage *2 bv 2 500 vr.m.s. operating ambient temperature t a C55 to +100 c storage temperature t stg C55 to +150 c *1 pw = 100 m s, duty cycle = 1 % *2 ac voltage for 1 minute at t a = 25 c, rh = 60 % between input and output
data sheet pn10248ej01v0ds 4 ps2732-1,ps2733-1 electrical characteristics (t a = 25 c) parameter symbol conditions min. typ. max. unit diode forward voltage v f i f = 10 ma 1.15 1.4 v reverse current i r v r = 5 v 5 m a terminal capacitance c t v = 0 v, f = 1 mhz 30 pf transistor collector to emitter dark current i ceo i f = 0 ma, v ce = 300 v 400 na coupled current transfer ratio (i c /i f ) ctr i f = 1 ma, v ce = 2 v 1 500 4 000 % collector saturation voltage v ce (sat) i f = 1 ma, i c = 2 ma 1.0 v isolation resistance r i-o v i-o = 1 kv dc 10 11 w isolation capacitance c i-o v = 0 v, f = 1 mhz 0.4 pf rise time *1 t r v cc = 5 v, i c = 10 ma, r l = 100 w 100 m s fall time *1 t f 100 *1 test circuit for switching time v cc v out r l = 100 w i f 50 w pulse input pw = 1 ms duty cycle = 1/10
data sheet pn10248ej01v0ds 5 ps2732-1,ps2733-1 typical characteristics (t a = 25 c, unless otherwise specified) 100 50 25 0 75 25 50 75 100 ambient temperature t a (c) diode power dissipation p d (mw) diode power dissipation vs. ambient temperature ambient temperature t a (c) transistor power dissipation p c (mw) transistor power dissipation vs. ambient temperature collector to emitter voltage v ce (v) collector current i c (ma) collector current vs. collector to emitter voltage 100 0.1 1 0.01 10 0.6 1.0 1.4 1.6 0.8 1.2 forward voltage v f (v) forward current i f (ma) forward current vs. forward voltage +25 c 0 c C25 c C55 c t a = +100 c +75 c +50 c ambient temperature t a (c) collector to emitter dark current vs. ambient temperature collector to emitter dark current i ceo (na) collector saturation voltage v ce (sat) (v) collector current i c (ma) collector current vs. collector saturation voltage 200 150 100 50 0 25 50 75 100 0.1 C50 v ce = 300 v 1 10 100 1 000 C25 0 25 50 75 100 10 000 1.5 mw/c 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1 000 100 10 1 0.1 012 345 160 140 120 100 80 60 40 20 1 ma i f = 5 ma 2 ma 1 ma 0.5 ma i f = 0.5 ma 1.5 ma 2 ma 2.5 ma 3.5 ma 3 ma 5 ma 4 ma 4.5 ma
data sheet pn10248ej01v0ds 6 ps2732-1,ps2733-1 25 1.2 1.0 0.8 0.6 0.4 0.2 C50 0 C25 50 75 100 5 000 0 v ce = 2 v 0.1 300 20 v cc = 10 v, i c = 10 ma normalized to 1.0 at t a = 25 ?c, i f = 1 ma, v ce = 2 v 0.01 v ce = 4 v, i c = 10 ma, v in = 0.1 v p-p C25 C15 C10 C5 0 4 000 3 000 2 000 1 000 sample b sample a 0.5 1 5 10 20 100 50 10 1 5 50 100 500 1 k 2 k t r t d t f t s C30 C20 0.1 1 10 100 v in f m 1 47 w 1 k w v out 100 w 1 k w 0 r l 1.2 1.0 0.8 0.6 0.4 0.2 0 10 10 2 10 3 10 4 10 5 10 6 i f = 1 ma t a = 25 ?c t a = 60 ?c forward current i f (ma) ambient temperature t a (?c) load resistance r l ( w ) frequency f (khz) normalized current transfer ratio ctr current transfer ratio ctr (%) normalized gain g v switching time t ( s) m normalized current transfer ratio vs. ambient temperature current transfer ratio vs. forward current switching time vs. load resistance frequency response long term ctr degradation time (hr) ctr (relative value) r l = 10 w remark the measurement of typical characteristics are only for reference, not guaranteed.
data sheet pn10248ej01v0ds 7 ps2732-1,ps2733-1 taping specifications (in millimeters) tape direction outline and dimensions (reel) packing: 3 500 pcs/reel 2.00.5 r 1.0 13.00.2 f 21.00.8 f 3302.0 f 1001.0 f 2.0 0.5 11.9 to 15.4 outer edge of flange 17.51.0 13.51.0 13.00.2 f PS2732-1-F3 ps2733-1-f3 ps2732-1-f4 ps2733-1-f4 1.550.1 2.00.05 4.00.1 1.750.1 4.60.1 2.9 max. 0.3 8.00.1 outline and dimensions (tape) 2.40.1 1.5 +0.1 C0 7.40.1 5.50.05 12.00.2
data sheet pn10248ej01v0ds 8 ps2732-1,ps2733-1 notes on handling 1. recommended soldering conditions (1) infrared reflow soldering ? peak reflow temperature 260 c or below (package surface temperature) ? time of peak reflow temperature 10 seconds or less ? time of temperature higher than 220 c 60 seconds or less ? time to preheat temperature from 120 to 180 c 120 30 s ? number of reflows three ? flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt% is recommended.) 12030 s (preheating) 220?c 180?c package surface temperature t (?c) time (s) recommended temperature profile of infrared reflow (heating) to 10 s to 60 s 260?c max. 120?c (2) wave soldering ? temperature 260 c or below (molten solder temperature) ? time 10 seconds or less ? preheating conditions 120 c or below (package surface temperature) ? number of times one (allowed to be dipped in solder including plastic mold portion.) ? flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt% is recommended.) (3) cautions ?fluxes avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. cautions regarding noise be aware that when voltage is applied suddenly between the photocouplers input and output or between collector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute maximum ratings.
data sheet pn10248ej01v0ds 9 ps2732-1,ps2733-1 usage cautions 1. protect against static electricity when handling. 2. avoid storage at a high temperature and high humidity.
data sheet pn10248ej01v0ds 10 ps2732-1,ps2733-1 specification of vde marks license document (vde0884) parameter symbol speck unit application classification (din vde 0109) for rated line voltages 150 vr.m.s. iv for rated line voltages 300 vr.m.s. iii climatic test class (din iec 68 teil 1/09.80) 55/100/21 dielectric strength maximum operating isolation voltage u iorm 710 v peak test voltage (partial discharge test, procedure a for type test and random test) u pr 850 v peak u pr = 1.2 u iorm , p d < 5 pc test voltage (partial discharge test, procedure b for all devices test) u pr = 1.6 u iorm , p d < 5 pc u pr 1 140 v peak highest permissible overvoltage u tr 4 000 v peak degree of pollution (din vde 0109) 2 clearance distance > 5 mm creepage distance > 5 mm comparative tracking index (din iec 112/vde 0303 part 1) cti 175 material group (din vde 0109) iii a storage temperature range t stg C55 to +150 c operating temperature range t a C55 to +100 c isolation resistance, minimum value v io = 500 v dc at t a = 25 cris min.10 12 w v io = 500 v dc at t a max. at least 100 cris min.10 11 w safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) package temperature tsi 150 c current (input current i f , psi = 0) isi 300 ma power (output or total power dissipation) psi 500 mw isolation resistance v io = 500 v dc at t a = 175 c (tsi) ris min. 10 9 w
data sheet pn10248ej01v0ds 11 ps2732-1,ps2733-1 m8e 00. 4 - 0110 the information in this document is current as of february, 2003. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a particular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation, nec compound semiconductor devices, ltd. and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above).
nec compound semiconductor devices hong kong limited hong kong head office taipei branch office korea branch office tel: +852-3107-7303 tel: +886-2-8712-0478 tel: +82-2-558-2120 fax: +852-3107-7309 fax: +886-2-2545-3859 fax: +82-2-558-5209 nec electronics (europe) gmbh http://www.ee.nec.de/ tel: +49-211-6503-01 fax: +49-211-6503-487 california eastern laboratories, inc. http://www.cel.com/ tel: +1-408-988-3500 fax: +1-408-988-0279 0302 nec compound semiconductor devices, ltd. 5th sales group, sales division tel: +81-44-435-1588 fax: +81-44-435-1579 e-mail: salesinfo@csd-nec.com for further information, please contact ps2732-1,ps2733-1 safety information on this product caution gaas products the product contains gallium arsenide, gaas. gaas vapor and powder are hazardous to human health if inhaled or ingested. ? do not destroy or burn the product. ? do not cut or cleave off any part of the product. ? do not crush or chemically dissolve the product. ? do not put the product in the mouth. follow related laws and ordinances for disposal. the product should be excluded from general industrial waste or household garbage.

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