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this is information on a product in full production. october 2012 doc id 15299 rev 4 1/13 13 STE140NF20D n-channel 200 v, 10 m typ., 140 a stripfet? ii power mosfet (with fast diode) in an isotop package datasheet ? production data features exceptional dv/dt capability low gate charge 100% avalanche tested applications switching applications description this power mosfet is produced using stmicroelectronics? unique stripfet tm process, which is specifically designed to minimize input capacitance and gate charge. the device offers extremely fast switching performance thanks to the intrinsic fast body diode, making the device ideal for hard switching topologies. figure 1. internal schematic diagram type v dss r ds(on) max i d STE140NF20D 200 v < 0.012 140 a i s otop table 1. device summary order code marking package packaging STE140NF20D 140nf20d isotop tube www.st.com
contents STE140NF20D 2/13 doc id 15299 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STE140NF20D electrical ratings doc id 15299 rev 4 3/13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 200 v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 c 140 a i d drain current (continuous) at t c =100 c 88 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 560 a p tot total dissipation at t c = 25 c 500 w i ar (2) 2. pulse width limited by tjmax avalanche current, repetitive or not repetitive 140 a e as (3) 3. strating tj = 25 c, i d = i ar , v dd = 50 v single pulse avalanche energy 800 mj dv/dt (4) 4. i sd 140 a, di/dt 1000 a/s, v dd 80% v (br)dss peak diode recovery voltage slope 25 v/ns v iso insulation winthstand voltage (ac-rms) 2500 v t j t stg operating junction temperature storage temperature - 55 to 150 c table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance junction-case 0.25 c/w r thj-amb thermal resistance junction-ambient 40 c/w
electrical characteristics STE140NF20D 4/13 doc id 15299 rev 4 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 200 v i dss zero gate voltage drain current (v gs = 0) v ds = 200 v, v ds = 200 v, t c = 125 c 10 100 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 70 a 10 12 m table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f=1 mhz, v gs =0 - 11100 2190 334 - pf pf pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 160 v, v gs = 0, - 1525 - pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related - 1139 - pf r g intrinsic gate resistance f = 1 mhz open drain - 1.4 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 160 v, i d = 140 a, v gs = 10 v (see figure 16) - 338 47 183 - nc nc nc
STE140NF20D electrical characteristics doc id 15299 rev 4 5/13 table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 100 v, i d = 70 a, r g =4.7 , v gs =10 v (see figure 15) - 232 218 283 250 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 140 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 560 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 140 a, v gs =0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 140 a, di/dt = 100 a/s, v dd = 60 v - 190 1.4 14 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 140 a, di/dt = 100 a/s, v dd = 60 v, tj=150 c - 257 2.4 18 ns c a
electrical characteristics STE140NF20D 6/13 doc id 15299 rev 4 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance ) $ 6 $3 6 ! /perationinthisareais ,imitedbymax2 $3on ?s ?s ms ms 4j?# 4c?# 3inglepulse !-v ) $ 6 $3 6 ! 6 6 6 6 '3 6 !-v ) $ 6 '3 6 ! 6 $3 6 !-v 6 '3 1 g n# 6 6 $$ 6 ) $ ! 6 $3 6 $3 6 !-v 2 $3on ) $ ! /hm 6 '3 6 !-v
STE140NF20D electrical characteristics doc id 15299 rev 4 7/13 figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics figure 13. normalized b vdss vs temperature # 6 $3 6 p& #iss #oss #rss !-v % oss 6 $3 6 ?* !-v 6 '3th 4 * ?# norm !-v )$?! 2 $3on 4 * ?# norm !-v 6'36 )$! 6 3$ ) 3$ ! 6 4 * ?# 4 * ?# 4 * ?# !-v "6 $33 4 * ?# norm !-v )$m!
electrical characteristics STE140NF20D 8/13 doc id 15299 rev 4 figure 14. maximum avalanche energy vs starting tj % !3 4 * ?# m* ) $ ! 6 $$ 6 !-v
STE140NF20D test circuits doc id 15299 rev 4 9/13 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive waveform figure 20. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data STE140NF20D 10/13 doc id 15299 rev 4 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 8. isotop mechanical data dim. mm min. typ. max. a 11.76 12.19 a1 8.92 9.58 b7.80 8.18 c0.76 0.84 c2 1.98 2.13 d 38 38.20 d1 31.50 31.70 e 25.20 25.45 e2 24.59 25.07 g 14.91 15.09 g1 12.57 12.83 f4.09 4.19 f1 4.67 4.93 p 4.09 4.27 p1 4.06 4.32 q 26.54 26.90 r3.94 4.42 s 30.12 30.30 t3.30 3.61 u6.88 7.09
STE140NF20D package mechanical data doc id 15299 rev 4 11/13 figure 21. isotop drawing 0041565_rev_i
revision history STE140NF20D 12/13 doc id 15299 rev 4 5 revision history table 9. document revision history date revision changes 27-jan-2009 1 first release 18-jan-2010 2 document status promoted from preliminary data to datasheet. 01-jul-2010 3 inserted v iso parameter in table 2: absolute maximum ratings 17-oct-2012 4 updated: figure 1 , 5 , 6 , 10 , 11 , 13 . updated: i sd value in note 4 (below table 2: absolute maximum ratings ). updated: i dss and i gss values (test conditions) in table 4: on/off states . updated: section 4: package mechanical data . minor text changes.
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