2SA608S transistor (pnp) features power dissipation p cm : 300 mw (tamb=25 ) collector current i cm : -100 ma collector-base voltage v (br)cbo : -40 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=-100 a, i e =0 -40 v collector-emitter breakdown voltage v (br)ceo ic=-1ma, i b =0 -30 v emitter-base breakdown voltage v (br)ebo i e =-100 a, i c =0 -5 v collector cut-off current i cbo v cb =-25v, i e =0 -1 a emitter cut-off current i ebo v eb =-4v, i c =0 -1 a dc current gain h fe v ce =-6v, i c =-1ma 60 560 collector-emitter saturation voltage v ce (sat) i c =-50ma, i b =-5ma -0.5 v transition frequency f t v ce =-6v, i c =-10ma 180 mhz collector output capacitance cob v cb =-6v, f=1mhz 7 pf classification of h fe rank d e f g range 60-120 100-200 160-320 280-560 to-92s 1. emitter 2. collector 3. base 123 2SA608S http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
|
