60 south jefferson road, whippany, nj 07981 tel: 973-887-8100 ? fax: 973-884-0445 ? www.mcekdi-resistor.com sales@mcekdi-resistor.com 1 10/16/02 parameters specifications frequency range dc to 3 ghz power 100 watts* vswr 1.10:1 max resistance 50 ohms +/- 5% operating temperature -55 c to 150 c substrate aluminum nitride * refer to average power derating curve chart. model KDI350-225G-50R0J 100 watts high power chip termination when properly mounted on an appropriate heat sink, this chip device provides high power dissipation capabilities. ideal for ferrite isolator applications, the improved thin film design technology and laser trimming provide proven peak and average rf power capabilities to meet the demands of today's cdma and wcdma system requirements. aluminum nitride is featured for those applications where the use and disposal of beryllium oxide is a concern. o environmentally friendly aln substrate o hi-performance, thin film element o power handling of 100 watts o new adhesion process results in improved terminal strength o on-chip matching network improves frequency performance over the dc-3 ghz frequency range average power derating curve ch1 s 11 log mag 10 db/ ref -20 db start .030 000 mhz stop 6 000.000 000 mhz cor hld prm 1 2 3 4 1_:-36.059 db 1 000.000 000 mhz 2_:-29.525 db 3 ghz 3_:-24.06 db 4.2 ghz 4_:-13.799 db 6 ghz specifications .225 ref [5.715] ref .350 ref [8.89] ref . 040 ref [1.016] wrap around .045 [1.143] .050 [1.27] chip base temp ?c % of rated power 25 25 0 50 50 75 100 75 100 125 150 physical dimensions typical performance note: dimenision are in inches [mm].
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