february 2010 doc id 16592 rev 2 1/10 10 let9045f rf power transistor from the ldmost family of n-channel enhancemen t-mode lateral mosfets features excellent thermal stability common source configuration pout = 45 w with 18.5 db gain @ 960 mhz beo free package in compliance with the 2002/95/ec european directive description the let9045f is a common source n-channel enhancement-mode lateral field-effect rf power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 ghz. the let9045f is designed for high gain and broadband performance operating in common source mode at 28 v. it is ideal for base station applications requiring high linearity. figure 1. pin out m250 epoxy sealed 1 3 2 1. drain 2. gate 3. source table 1. device summary order code package branding let9045f m250 let9045f www.st.com
maximum ratings let9045f 2/10 doc id 16592 rev 2 1 maximum ratings table 2. absolute maximum ratings (t case = 25 c) symbol parameter value unit v (br)dss drain-source voltage 80 v v gs gate-source voltage -0.5 to +15 v i d drain current 9 a p diss power dissipation (@ t c = 70 c) 108 w t j max. operating junction temperature 200 c t stg storage temperature -65 to +150 c table 3. thermal data symbol parameter value unit r th(jc) junction-case thermal resistance 1.2 c/w
let9045f electrical characteristics doc id 16592 rev 2 3/10 2 electrical characteristics t c = 25 c table 4. static symbol test conditions min. typ. max. unit v (br)dss v gs = 0 v; i ds = 10 ma 80 v i dss v gs = 0 v; v ds = 28 v 1 a i gss v gs = 20 v; v ds = 0 v 1 a v gs(q) v ds = 28 v; i d = 300 ma 2.0 5.0 v v ds(on) v gs = 10 v; i d = 3 a 0.9 1.2 v g fs v ds = 10 v; i d = 3 a 2.5 mho c iss v gs = 0 v; v ds = 28 v; f = 1 mhz 58 pf c oss v gs = 0 v; v ds = 28 v; f = 1 mhz 29 pf c rss v gs = 0 v; v ds = 28 v; f = 1 mhz 0.8 pf table 5. dynamic symbol test conditions min. typ. max. unit p out v dd = 28 v; i dq = 300 ma; p in = 1 w; f = 960 mhz 45 59 w g ps v dd = 28 v; i dq = 300 ma; p in = 1 w; f = 960 mhz 16.5 17.7 db h d v dd = 28 v; i dq = 300 ma; p in = 1 w; f = 960 mhz 60 65 % load mismatch v dd = 28 v; i dq = 300 ma; p in = 1 w; f = 960 mhz all phase angles 10:1 vswr
impedance data let9045f 4/10 doc id 16592 rev 2 3 impedance data figure 2. impedance data table 6. impedance data frequency z in ( ? )z dl ( ? ) 920 0.8 - j 0.08 5.3 + j 0.63 945 0.7 - j 0.4 5 + j 1.5 960 0.6 - j 0.6 4.7 + j 2 typical drain load ty p i c a l input g zin z dl d s
let9045f typical performances doc id 16592 rev 2 5/10 4 typical performances figure 3. gain vs output power and bias current, freq = 960 mhz, vdd = 28 v figure 4. gain and efficiency vs output power, freq = 960 mhz, vdd = 28 v, idq = 300 ma table 7. output power vs supply voltage freq = 960 mhz, vdd = 28 v, idq = 300 ma * $ , 1 g % 3 2 8 7 : d w w , g t p $ , g t p $ , g t p $ , g t p $ , g t p $ ! - v ! - v % & |