vishay 1n4245 to 1n4249 document number 86094 rev. 1, 12-nov-02 vishay semiconductors www.vishay.com 1 17031 sinterglass medium-switching junction rectifier features ? high temperature metallurgically bonded con- structed rectifiers 1.0 ampere operation at t amb = 55 c with no ther- mal runaway typical i r less than 0.1 a hermetically sealed package capable of meeting environmental standards of mil-s-19500 high temperature soldering guaranteed: 350 c/ 10 seconds, 0.375 " (9.5 mm) lead length, 5 lbs. (2.3 kg) tension mechanical data case: jedec do-204ap solid glass body terminals: solder plated axial leads, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any weight: 560 mg parts table absolute maximum ratings t amb = 25 c, unless otherwise specified part type differentiation 1n4245 v rrm = 200 v 1n4246 v rrm = 400 v 1n4247 v rrm = 600 v 1n4248 v rrm = 800 v 1n4249 v rrm = 1000 v parameter tes t c o nd iti on sub type symbol value unit maximum repetitive peak reverse voltage 1n4245 v rrm 200 v 1n4246 v rrm 400 v 1n4247 v rrm 600 v 1n4248 v rrm 800 v 1n4249 v rrm 1000 v maximum rms voltage 1n4245 v rms 140 v 1n4246 v rms 280 v 1n4247 v rms 420 v 1n4248 v rms 560 v 1n4249 v rms 700 v maximum dc blocking voltage 1n4245 v dc 200 v 1n4246 v dc 400 v 1n4247 v dc 600 v 1n4248 v dc 800 v 1n4249 v dc 1000 v maximum average forward rectified current 0.375 " (9.5 mm) lead length at t amb = 55 c i f(av) 1.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (jedec method) i fsm 50 a
document number 86094 rev. 1, 12-nov-02 www.vishay.com 2 vishay 1n4245 to 1n4249 vishay semiconductors maximum thermal resistance t amb = 25 c, unless otherwise specified 1) thermal resistance from junction to ambient and from junction to lead at 0.375 " (9.5mm) lead length, with both leads mounted between heat sinks. electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics (t amb = 25c unless otherwise specified) parameter te s t c o n d i t i o n sub type symbol value unit typical thermal resistance 1) r ja 55 c/w operating junction temperature range t j - 65 to + 175 c storage temperature range t stg - 65 to + 200 c maximum full load reverse current full cycle average 0.375 " (9.5 mm) lead length at t amb = 55 c i r(av) 50 a parameter te s t c o n d i t i o n sub type symbol min typ. max unit maximum instantaneous forward voltage i f = 1.0 a v f 1.2 v maximum dc reverse current at rated dc blocking voltage t amb = 25 c i r 1.5 a at rated dc blocking voltage t amb = 125 c i r 25 a typical junction capacitance v r = 4 v, f = 1 mhz c j 15 pf figure 1. forward current derating curve 0 0 average forward rectified current (a) ambient temperature ( c) 25 50 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 60h z resistive or inductive load 0.375" (9.5mm) lead length g1n4245_01 figure 2. maximum non-repetitive peak forward surge current 0 110 100 number of cycles at 60h z 10 20 30 40 50 peak forward rectified surge current (a) t j =t jmax 8.3ms single half sine-wave (jedec method) g1n4245_02
vishay 1n4245 to 1n4249 document number 86094 rev. 1, 12-nov-02 vishay semiconductors www.vishay.com 3 figure 3. typical instantaneous forward characteristics figure 4. typical reverse characteristics figure 5. typical junction capacitance 0.4 0.6 0.8 1.0 1.2 1.4 1.6 instantaneous forward voltage (v) 0.01 0.1 1 10 instantaneous forward rectified current (a) pulse width = 300 s 1% duty cycle t j =25 c t j =150 c g1n4245_03 0 0.01 0.1 1 10 instantaneous reverse current ( a) 60 80 100 20 40 percent of rated peak reverse voltage (%) t j =25 c t j =150 c t j =100 c g1n4245_04 1 1 0 100 reverse voltage (v) 1 10 30 junction capacitance (pf) t j =25 c f = 1.0mh z vsig = 50mvp-p g1n4245_05
document number 86094 rev. 1, 12-nov-02 www.vishay.com 4 vishay 1n4245 to 1n4249 vishay semiconductors package dimensions in mm 0.034 (0.86) 0.028 (0.71) dia. 0.150 (3.8) 0.100 (2.5) dia. 1.0 (25.4) min. 0.240 (6.1) max. 1.0 (25.4) min. 17030
vishay 1n4245 to 1n4249 document number 86094 rev. 1, 12-nov-02 vishay semiconductors www.vishay.com 5 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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