pzt4403 transistor (pnp) features power dissipation p cm: 1 w (tamb=25 ) collector current i cm: -0.6 a collector-base voltage v (br)cbo: -40 v operating and storage j unction temperature range t j, t stg: -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=-100a,i e =0 -40 v collector-emitter breakdown voltage v (br)ceo ic=-1ma,i b =0 -40 v emitter-base breakdown voltage v (br)ebo i e =-100a,i c =0 -6 v collector cut-off current i cbo v cb =-40v,i e =0 -50 na emitter cut-off current i ebo v eb =-5v,i c =0 -50 na h fe(1) v ce =-1v,i c =-0.1ma 30 h fe(2) v ce =-1v,i c =-1ma 60 h fe(3) v ce =-1v,i c =-10ma 100 h fe(4) v ce =-1v,i c =-150ma 100 300 dc current gain h fe(5) v ce =-2v,i c =-500ma 20 v ce(sat) i c =-150ma,i b =-15ma -0.4 v collector-emitter saturation voltage v ce(sat) i c =-500ma,i b =-50ma -0.75 v v be(sat) i c =-150ma,i b =-15ma -0.95 v base-emitter saturation voltage v be(sat) i c =-500ma,i b =-50ma -1.3 v transition frequency f t v ce =-10v,i c =-20ma,f=100mhz 200 mhz collector capacitance c c v cb =-5v,i e =0,f=1mhz 8.5 pf emitter capacitance c e v eb =-0.5v,i c =0,f=1mhz 35 pf delay time t d 15 ns rise time t r 30 ns storage time t s 300 ns fall time t f v cc =-29.5v, i c =-150ma v bb =3.5v,i b1 =- i b2 =-15ma 50 ns SOT-223 1. base 2. collector 3. emitter pzt4403 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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