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this is information on a product in full production. august 2012 doc id 023436 rev 1 1/21 21 stb32nm50n, stf32nm50n, STP32NM50N, stw32nm50n n-channel 500 v, 0.1 typ., 22 a mdmesh? ii power mosfet in d2pak, to-220fp, to-220, to-247 packages datasheet ? production data features 100% avalanche tested low input capacitance and gate charge low gate input resistance applications switching applications description these devices are n-channel power mosfets developed using the second generation of mdmesh? technology. this revolutionary power mosfet associates a vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. figure 1. internal schematic diagram order codes v ds r ds(on) max. i d p tot stb32nm50n stf32nm50n STP32NM50N stw32nm50n 500 v 0.13 22 a 190 w 35 w 190 w 190 w 1 2 3 to-247 to-220 1 2 3 to-220fp 1 3 tab 2 d2pak 1 2 3 ta b !-v $or4!" ' 3 table 1. device summary order codes marking package packaging stb32nm50n stf32nm50n STP32NM50N stw32nm50n 32nm50n d 2 pa k to-220fp to-220 to-247 tape and reel tu b e tu b e tu b e www.st.com
contents stb32nm50n, stf32nm50n, STP32NM50N, stw32nm50n 2/21 doc id 023436 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
stb32nm50n, stf32nm50n, STP32NM50N, stw32nm50n electrical ratings doc id 023436 rev 1 3/21 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit d2pak, to-220, to-247 to-220fp v ds drain-source voltage 500 v v gs gate- source voltage 25 v i d drain current (continuous) at t c = 25 c 22 22 (1) 1. limited by maximum junction temperature. a i d drain current (continuous) at t c = 100 c 13.86 13.86 (1) a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 88 88 a p tot total dissipation at t c = 25 c 190 35 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 7a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 340 mj dv/dt (3) 3. i sd 22 a, di/dt 400 a/s, v ds peak v (br)dss , v dd 80% v (br)dss peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 table 3. thermal data symbol parameter d2pak to-220fp to-220 to-247 unit r thj-case thermal resistance junction-case max 0.66 3.6 0.66 c/w r thj-amb thermal resistance junction-ambient max 62.5 50 r thj-pcb (1) 1. when mounted on fr-4 board of 1 inch2, 2 oz cu. thermal resistance junction-pcb max 30
electrical characteristics stb32nm50n, stf32nm50n, STP32NM50N, stw32nm50n 4/21 doc id 023436 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions value unit min. typ. max. v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 500 v i dss zero gate voltage drain current (v gs = 0) v ds = 500 v v ds = 500 v, t c = 125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 11 a 0.1 0.13 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 1973 179 9.7 - pf pf pf c oss eq. (1) 1. c oss eq . is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v gs = 0, v ds = 0 to 400 v - 325 - pf t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd =250 v, i d = 11 a r g =4.7 , v gs = 10 v (see figure 23 ), (see figure 18 ) - 21.5 9.5 110 23.6 - ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 400 v, i d = 22 a, v gs = 10 v, (see figure 19 ) - 62.5 8.6 33 - nc nc nc r g gate input resistance f=1mhz gate dc bias=0 test signal level=20 mv open drain -3.8-
stb32nm50n, stf32nm50n, STP32NM50N, stw32nm50n electrical characteristics doc id 023436 rev 1 5/21 table 6. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 22 88 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5%. forward on voltage i sd = 22 a, v gs = 0 - 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 22 a, v dd = 60 v di/dt=100 a/s (see figure 20 ) - 328 5 30.5 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 22 a,v dd = 60 v di/dt=100 a/s, t j = 150 c (see figure 20 ) - 392 6.5 32.8 ns nc a
electrical characteristics stb32nm50n, stf32nm50n, STP32NM50N, stw32nm50n 6/21 doc id 023436 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area for d 2 pak and to-220 figure 3. thermal impedance for for d 2 pak and to-220 figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am1 3 0 8 7v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e 0.01 am1 3 0 88 v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am1 3 0 8 9v1
stb32nm50n, stf32nm50n, STP32NM50N, stw32nm50n electrical characteristics doc id 023436 rev 1 7/21 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on-resistance figure 12. capacitance variations figure 13. output capacitance stored energy i d 3 0 20 10 0 0 10 v d s (v) 20 (a) 5 15 25 40 5v 6v v g s =10v 3 0 50 60 4v am1 3 090v1 i d 3 0 20 10 0 0 4 v g s (v) 8 (a) 2 6 10 40 50 60 v d s =21v am1 3 091v1 v g s 6 4 2 0 0 10 q g (nc) (v) 40 8 20 3 0 10 v dd =400v i d =22a 50 12 250 200 100 0 3 50 400 v d s v d s (v) 3 00 150 50 60 am1 3 092v1 r d s (on) 0.100 0.09 8 0.096 0.094 0 10 i d (a) ( ) 5 15 0.102 0.104 v g s =10v 20 am1 3 09 3 v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 10000 100 ci ss co ss cr ss am1490 3 v1 e o ss 3 2 1 0 0 100 v d s (v) ( j) 400 4 200 3 00 500 6 5 7 8 9 10 am14904v1
electrical characteristics stb32nm50n, stf32nm50n, STP32NM50N, stw32nm50n 8/21 doc id 023436 rev 1 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on-resistance vs temperature figure 16. normalized v ds vs temperature figure 17. source-drain diode forward characteristics v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d =250 a am14905v1 r d s (on) 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 0.9 1.1 1. 3 1.5 1.7 1.9 2.1 i d =11a am14906v1 v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.02 1.04 1.06 i d =1ma 1.0 8 1.10 am0902 8 v1 v s d 0 4 i s d (a) (v) 2 10 6 8 0 0.2 0.4 0.6 0. 8 1.0 1.2 t j =-50c t j =150c t j =25c 1.4 12 14 16 1 8 20 22 am1490 8 v1
stb32nm50n, stf32nm50n, STP32NM50N, stw32nm50n test circuits doc id 023436 rev 1 9/21 3 test circuits figure 18. switching times test circuit for resistive load figure 19. gate charge test circuit figure 20. test circuit for inductive load switching and diode recovery times figure 21. unclamped inductive load test circuit figure 22. unclamped inductive waveform figure 23. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data stb32nm50n, stf32nm50n, STP32NM50N, stw32nm50n 10/21 doc id 023436 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack? packages, depending on their level of environmental compliance. ecopack? specifications, grade definitions and product status are available at: www.st.com . ecopack? is an st trademark. table 7. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
stb32nm50n, stf32nm50n, STP32NM50N, stw32nm50n package mechanical data doc id 023436 rev 1 11/21 figure 24. d2pak (to-263) drawing figure 25. d2pak footprint (a) a. all dimensions are in millimeters 0079457_t 16.90 12.20 9.75 3 .50 5.0 8 1.60 footprint
package mechanical data stb32nm50n, stf32nm50n, STP32NM50N, stw32nm50n 12/21 doc id 023436 rev 1 table 8. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
stb32nm50n, stf32nm50n, STP32NM50N, stw32nm50n package mechanical data doc id 023436 rev 1 13/21 figure 26. to-220fp drawing 7012510_rev_k_b
package mechanical data stb32nm50n, stf32nm50n, STP32NM50N, stw32nm50n 14/21 doc id 023436 rev 1 table 9. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
stb32nm50n, stf32nm50n, STP32NM50N, stw32nm50n package mechanical data doc id 023436 rev 1 15/21 figure 27. to-220 type a drawing 00159 88 _typea_rev_ s
package mechanical data stb32nm50n, stf32nm50n, STP32NM50N, stw32nm50n 16/21 doc id 023436 rev 1 table 10. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
stb32nm50n, stf32nm50n, STP32NM50N, stw32nm50n package mechanical data doc id 023436 rev 1 17/21 figure 28. to-247 drawing 0075 3 25_g
packaging mechanical data stb32nm50n, stf32nm50n, STP32NM50N, stw32nm50n 18/21 doc id 023436 rev 1 5 packaging mechanical data table 11. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
stb32nm50n, stf32nm50n, STP32NM50N, stw32nm50n packaging mechanical data doc id 023436 rev 1 19/21 figure 29. tape figure 30. reel p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us top cover t a pe am0 88 52v2 a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
revision history stb32nm50n, stf32nm50n, STP32NM50N, stw32nm50n 20/21 doc id 023436 rev 1 6 revision history table 12. document revision history date revision changes 01-aug-2012 1 initial release.
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