KDS5670 features 10 a, 60 v. r ds(on) = 0.014 @v gs =10v r ds(on) = 0.017 @v gs =6v low gate charge fast switching speed. high performance trench technology for extremely low r ds(on) high power and current handling capability absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 60 v gate to source voltage v gs 20 v drain current continuous (note 1a) 10 a drain current pulsed 50 a power dissipation (note 1a) 2.5 power dissipation (note 1b) 1.2 power dissipation (note 1c) 1 operating and storage temperature range t j ,t stg -55to175 thermal resistance junction to ambient (note 1a) r ja 50 /w thermal resistance junction to case (note 1) r jc 25 /w i d p d w smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic s m d ty p e m o s f e t s m d ty p e m o s f e t product specification 1of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
smd type ic smd type ic electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain-source breakdown voltage b vdss v gs =0v,i d = 250 a 60 v breakdown voltage temperature coefficient i d = 250 a, referenced to 25 58 mv/ zero gate voltage drain current i dss v ds =48v,v gs =0v 1 a gate-body leakage, forward i gssf v gs =20v,v ds = 0 v 100 na gate-body leakage, reverse i gssr v gs =-20v,v ds = 0 v -100 na gate threshold voltage v gs(th) v ds =v gs ,i d = 250 a 22.44 v gate threshold voltage temperature coefficient i d = 250 a, referenced to 25 6.8 mv/ v gs =10v,i d = 10 a 0.012 0.014 v gs =10v,i d =10 a,t j = 125 0.019 0.027 v gs =6v,i d =9 a 0.014 0.017 on-state drain current i d(on) v gs =10v,v ds =5v 25 a forward transconductance g fs v ds =5v, i d =10 a 39 s input capacitance c iss 2900 pf output capacitance c oss 685 pf reverse transfer capacitance c rss 180 pf turn-on delay time t d(on) 16 29 ns turn-on rise time tr 10 20 ns turn-off delay time t d(off) 50 80 ns turn-off fall time t f 23 42 ns total gate charge q g 49 70 nc gate-source charge q gs 9nc gate-drain charge q gd 10.4 nc maximum continuous drain-source diode forward current i s 2.1 a drain-source diode forward voltage v sd v gs =0v,i s = 2.1 a (not 2) 0.72 1.2 v v ds =20v,i d =10a,v gs =10v(note 2) v dd =30v,i d =1a,v gs =10v,r gen = 6 (note 2) v ds =15v,v gs =0v,f=1.0mhz r ds(on) static drain-source on-resistance KDS5670 smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic s m d ty p e m o s f e t s m d ty p e m o s f e t product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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