smd type transistors 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 2SA1257 features high breakdown voltage. small output capacitance. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -180 v collector-emitter voltage v ceo -160 v emitter-base voltage v ebo -5 v collector current i c -80 ma collector current (pulse) i cp -150 ma collector dissipation p c 200 mw jumction temperature t j 125 storage temperature t stg -55 to +125 product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current ic bo v cb = -120v , i e =0 -0.1 a emitter cutoff current i ebo v eb =-4v,i c =0 -0.1 a dc current gain h fe v ce =-5v,i c = -10 ma 60 270 gain bandwidth product f t v ce =-10v,i c = -10 ma 130 mhz output capacitance c ob v cb = -10v , f = 1mhz 2.4 3.2 pf base-emitter voltage v be v ce =-5v,i c =-10ma -1.5 v collector-emitter saturation voltage v ce(sat) i c =-30ma,i b =-3ma -0.7 v collector-to-base breakdown voltage v (br)cbo i c =-10a,i e =0 -180 v collector-to-emitter breakdown voltage v (br)ceo i c =-1ma,r be = -160 v emitter-base breakdown voltage v (br)ebo i e =-10a,i c =0 -5 v turn-on time t on 0.15 s storage time t stg 0.95 s fall time t f 0.15 s h fe classification rank g3 g4 g5 hfe 60 120 90 180 135 270 smd type transistors 2SA1257 product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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