AM2308NE these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. v ds (v) r ds(on) m( ) i d (a) 60 @ v gs = 4.5v 3.5 82 @ v gs = 2.5v 3.0 product summary 30 ? low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe sot-23 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature symbol limit units v ds 30 v gs 12 t a =25 o c 3.5 t a =70 o c 2.8 i dm 16 i s 1.25 a t a =25 o c 1.25 t a =70 o c 0.8 t j , t stg -55 to 150 o c continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a power dissipation a p d operating junction and storage temperature range w symbol maximum units t <= 10 sec 100 o c/w steady-state 166 o c/w thermal resistance ratings parameter maximum junction-to-ambient a r ja d s g esd protected 2000v 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
notes a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. specifications (t a = 25 o c unless otherwise noted) parameter symbol test conditions limits unit min typ max static gate-threshold voltage v gs(th) v ds = v gs , i d = 250 ua 0.6 v gate-body leakage i gss v ds = 0 v, v gs = 12 v 10 ua zero gate voltage drain current i dss v ds = 24 v, v gs = 0 v 1 ua v ds = 24 v, v gs = 0 v, t j = 55 o c 25 on-state drain current a i d(on) v ds = 5 v, v gs = 4.5 v 6 a drain-source on-resistance a r ds(on) v gs = 4.5 v, i d = 3.5 a 60 m v gs = 2.5 v, i d = 3 a 82 forward tranconductance a g fs v ds = 15 v, i d = 3.5 a 6.9 s diode forward voltage v sd i s = 2.3 a, v gs = 0 v 0.8 v dynamic b total gate charge q g v ds = 15 v, v gs = 2.5 v, i d = 3.5 a 6.3 nc gate-source charge q gs 0.9 gate-drain charge q gd 1.9 turn-on delay time t d(on) v dd = 25 v, r l = 25 , i d = 1 a, v gen = 10 v 16 ns rise time t r 5 turn-off delay time t d(off) 23 fall-time t f 3 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com AM2308NE product specification
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