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| automotive grade features advanced planar technology low on-resistance isolated package high voltage isolation = 2.5kvrms sink to lead creepage distance = 4.8mm 175c operating temperature fully avalanche rated lead-free, rohs compliant automotive qualified * description specifically designed for automotive applications, this cellular design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. this benefit combined with the fast switching speed and rug- gedized device design that hexfet power mosfets are well known for, provides the de- signer with an extremely efficient and reliable de- vice for use in automotive and a wide variety of other applications. to-220ab full-pak AUIRFI3205 gds gate drain source s d g absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. www.irf.com 1 hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ v (br)dss 55v r ds(on) max. 0.008 ? i d 64a parameter units i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery dv/dt v/ns t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds (1.6mm from case ) mounting torque, 6-32 or m3 screw thermal resistance parameter typ. max. units r ? jc junction-to-case ??? 2.4 c/w r ? ja junction-to-ambient ??? 65 -55 to + 175 300 10 lbf in (1.1n m) 63 0.42 20 max. 64 45 390 5.0 6.3 480 59 2 www.irf.com s d g ! "# $ % & '(&) * '(+,)-'./0 '( ? )1 '(.2 "# 3 % i sd ? (.2) ? .2/)& ? & ) * ? 4(+, 5 ?? / ?? 6 '7)8'709 uses irf3205 data and test conditions. r ? is measured at tj at approximately 90c. s d g static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 55 ??? ??? v ? ? ? a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ??? ??? 170 q gs gate-to-source charge ??? ??? 32 nc q gd gate-to-drain ("miller") charge ??? ??? 74 t d(on) turn-on delay time ??? 14 ??? t r rise time ??? 100 ??? t d(off) turn-off delay time ??? 43 ??? ns t f fall time ??? 70 ??? l d internal drain inductance ??? 4.5 ??? between lead, nh 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package and center of die contact c iss input capacitance ??? 4000 ??? c oss output capacitance ??? 1300 ??? pf c rss reverse transfer capacitance ??? 480 ??? c drain to sink capacitance ??? 12 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 64 (body diode) a i sm pulsed source current ??? ??? 390 (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 110 170 ns q rr reverse recovery charge ??? 450 680 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) ? = 1.0mhz conditions v gs = 10v, see fig. 6&13 v dd = 28v i d = 59a r g = 2.5 ? t j = 25c, i f = 59a di/dt = 100a/ s conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 34a v ds = v gs , i d = 250 a v ds = 55v, v gs = 0v v ds = 44v, v gs = 0v, t j = 125c mosfet symbol showing the integral reverse p-n junction diode. v ds = 25v, i d = 59a i d = 59a v ds = 44v conditions r d = 0.39 ? v gs = 0v v ds = 25v ? = 1.0mhz, see fig. 5 v gs = 20v v gs = -20v www.irf.com 3 !! ""#! $ % %& %" qualification information ? to-220 fullpak n/a qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5 (+/- 1125v) ?? aec-q101-005 moisture sensitivity level rohs compliant yes esd machine model class m4 (+/- 425v) ?? aec-q101-002 human body model class h2 (+/- 4000v) ?? aec-q101-001 4 www.irf.com '# () *"+# +, ) - +, ) - +, + - 10 100 1000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 20 s pulse width t = 25c c a 4.5v 10 100 1000 0.1 1 10 100 4.5v i , drain-to-source current (a) d v , drain-to-source voltage (v) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 20 s pulse width t = 175c c a 1 10 100 1000 45678910 t = 25c j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) t = 175c j a v = 25v 20 s pulse width ds 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) v = 10v gs a i = 98a d * * www.irf.com 5 +, . - %*" . / * % 0 1# #/ ) %2 +, - *" / * % +, / 3 * % 0 1000 2000 3000 4000 5000 6000 7000 8000 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0 30 60 90 120 150 180 q , total gate charge (nc) g v , gate-to-source voltage (v) gs a for test circuit see figure 13 i = 59a v = 44v v = 28v v = 11v d ds ds ds 10 100 1000 0.6 1.0 1.4 1.8 2.2 2.6 3.0 t = 25c j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a t = 175c j 1 10 100 1000 1 10 100 v , drain-to-source voltage (v) ds i , drain current (a) operation in this area limited by r d ds(on) 10 s 100 s 1ms 10ms a t = 25c t = 175c single pulse c j 6 www.irf.com 0 1# # - *" - +# / %+#+- v ds 90% 10% v gs t d(on) t r t d(off) t f / %+#4 &# & ???? ??????? & : ; * & + - & 0 1# #5&+ + # # 67 - 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) www.irf.com 7 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 ? f 50k ? .2 ? f 12v current regulator same type as d.u.t. current sampling resistors + - 89* . - %+- : . - %4 &# 0 1# #2& 5%, *" - 0 200 400 600 800 1000 1200 25 50 75 100 125 150 175 j e , single pulse avalanche energy (mj) as a starting t , junction temperature (c) v = 25v i top 24a 42a bottom 59a dd d v ds l d.u.t. v dd i as t p 0.01 ? r g + - t p v ds i as v dd v (br)dss ; # &4 &# ; # &+- 8 www.irf.com p.w. period di/dt diode recovery dv/dt ripple ? 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - 3'- $5<35+/ = & '(&$!-! - : & ??? ! ! ??? : : ; * ??? 1 ! ! : 3 !<:< ??? : ; * =: ; * , - ! ,! ! ????? -!# 1 ???? >!5 ???? -!- ? 1 , * $! = www.irf.com 9 to-220ab full-pak package outline dimensions are shown in millimeters (inches) to-220ab full-pak part marking information - >?> 44?4@4@ 2?2 #&6a 3 ' # a% a- 10 www.irf.com ordering information base part number package type standard pack complete part number form quantity AUIRFI3205 to-220 fullpak tube 50 AUIRFI3205 www.irf.com 11 ! "#$ % & ' # ( ) ) * ' ' % +% ' * , ' - ( % , ( ./ , / % ( , 0 1 2 # 12# .1 1 12# ' - / 12# - ' / ) ' .0&*.34565' "#$ / - - ' ! "# |
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