FDG312P absolute maximum ratings t a = 25c unless otherwise noted symbol parameter ratings units v dss drain-source voltage -20 v v gss gate-source voltage 8v i d drain current - continuous (note 1) -1.2 a - pulsed -6 power dissipation for single operation (note 1a) 0.75 w (note 1b) 0.55 p d (note 1c) 0.48 t j , t stg operating and storage junction temperature range -55 to +150 c thermal characteristics r q ja thermal resistance, junction-to-ambient (note 1) 260 c/w package outlines and ordering information device marking device reel size tape width quantity . 12 FDG312P 7 8mm 3000 units applications ? load switch ? battery protection ? power management ? -1.2 a, -20 v. r ds(on) = 0.18 w @ v gs = -4.5 v r ds(on) = 0.25 w @ v gs = -2.5 v. ? low gate charge (3.3 nc typical). ? high performance trench technology for extremely low r ds(on) . ? compact industry standard sc70-6 surface mount package. 3 5 6 4 1 2 3 sc70-6 d s d g d d 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com smd type smd type smd type product specification
dmos electrical characteristics t a = 25c unless otherwise noted s y mbol parameter test conditions min t yp max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = -250 m a-20 v d bv dss d t j breakdown voltage temperature coefficient i d = -250 m a , referenced to 25 c-19 mv/ c i dss zero gate voltage drain current v ds = -16 v, v gs = 0 v -1 m a i gssf gate-body leakage current, forward v gs = 8 v, v ds = 0 v 100 na i gssr gate-body leakage current, reverse v gs = -8 v, v ds = 0 v -100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = -250 m a -0.4 -0.9 -1.5 v d v gs(th) d t j gate threshold voltage temperature coefficient i d = -250 m a , referenced to 25 c2.5 mv/ c r ds(on) static drain-source on-resistance v gs = -4.5 v, i d = -1.2 a v gs = -4.5 v, i d = -1.2 a @125 c v gs = -2.5 v, i d = -1 a 0.135 0.200 0.187 0.18 0.29 0.25 w i d(on) on-state drain current v gs = -4.5 v, v ds = -5 v -3 a g fs forward transconductance v ds = -5 v, i d = -1.2 a 3.8 s dynamic characteristics c iss input capacitance 330 pf c oss output capacitance 80 pf c rss reverse transfer capacitance v ds = -10 v, v gs = 0 v, f = 1.0 mhz 35 pf switching characteristics (note 2) t d(on) turn-on delay time 7 15 ns t r turn-on rise time 12 22 ns t d(off) turn-off delay time 16 26 ns t f turn-off fall time v dd = -5 v, i d = -0.5 a, v gs = -4.5 v, r gen = 6 w 512ns q g total gate charge 3.3 5 nc q gs gate-source charge 0.8 nc q gd gate-drain charge v ds = -10 v, i d = -1.2 a, v gs = -4.5 v 0.7 nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -0.6 a v sd drain-source diode forward voltage v gs = 0 v, i s = -0.6 a (note 2) -0.83 -1.2 v notes: 1. r q ja is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mou nting surface of the drain pins. r q jc is guaranteed by design while r q ja is determined by the user's board design. scale 1 : 1 on letter size paper 2. pulse test: pulse width 300 m s, duty cycle 2.0% a) 170 c/w when mounted on a 1 in 2 pad of 2oz copper. b) 225 c/w when mounted on a half of package sized 2oz. copper. c) 260 c/w when mounted on a minimum pad of 2oz copper. FDG312P product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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