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/0&' 1 .. 2% 3453 www.irf.com 1 to-247ad absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 1200 v i c @ t c = 25c continuous collector current 41 a i c @ t c = 100c continuous collector current 21 i cm pulse collector current 82 i lm clamped inductive load current 82 i f @ tc = 100c diode continuous forward current 10 i fm diode maximum forward current 40 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 160 w p d @ t c = 100c maximum power dissipation 65 t j operating junction and -55 to +150 t stg storage temperature range c storage temperature range, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw thermal / mechanical characteristics parameter min. typ. max. units r jc junction-to-case- igbt ??? ??? 0.77 c/w r jc junction-to-case- diode ??? ??? 2.5 r cs case-to-sink, flat, greased surface ??? 0.24 ??? r ja junction-to-ambient, typical socket mount ??? ??? 40 wt weight ??? 6 (0.21) ??? g (oz.) 10 lbf in (1.1n m)

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2 www.irf.com electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 1200 ? ? v v ge = 0v, i c = 250a v (br)ecs emitter-to-collector breakdown voltage 18 ? ? v v ge = 0v, i c = 1.0a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ?0.43?v/c v ge = 0v, i c = 1ma ? 2.43 3.1 v i c = 21a v ge = 15v v ce(on) collector-to-emitter saturation voltage ? 2.97 ? i c = 41a see fig.2, 5 ?2.47? i c = 21a, t j = 150c v ge(th) gate threshold voltage 3.0 ? 6.0 v ce = v ge , i c = 250a ? v ge(th) / ? t j threshold voltage temp. coefficient ? -11 ? mv/c v ce = v ge , i c = 250a gfe forward transconductance 16 24 ? s v ce = 100v, i c = 21a i ces zero gate voltage collector current ? ? 250 a v ge = 0v, v ce = 1200v ? ? 5000 v ge = 0v, v ce = 1200v, t j = 150c v fm diode forward voltage drop ? 3.4 3.8 v i f = 10a see fig.13 ?3.33.7 i f = 10a, t j = 150c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions q g total gate charge (turn-on) ? 100 150 i c = 21a q ge gate-to-emitter charge (turn-on) ? 18 24 nc v cc = 400v see fig.8 q gc gate-to-collector charge (turn-on) ? 34 50 v ge = 15v t d(on) turn-on delay time ? 22 ? t r rise time ? 26 ? ns i c = 21a, v cc = 800v t d(off) turn-off delay time ? 100 140 v ge = 15v, r g = 10 ? t f fall time ? 200 300 energy losses include "tail" and e on turn-on switching loss ? 1950 ? diode reverse recovery. e off turn-off switching loss ? 1710 ? j see fig. 9, 10, 11, 18 e tot total switching loss ? 3660 4490 t d(on) turn-on delay time ? 21 ? t j = 150c, see fig. 9, 10, 11, 18 t r rise time ? 25 ? ns i c = 21a, v cc = 800v t d(off) turn-off delay time ? 220 ? v ge = 15v, r g = 10 ? t f fall time ? 380 ? energy losses include "tail" and e ts total switching loss ? 6220 ? j diode reverse recovery. l e internal emitter inductance ? 13 ? nh measured 5mm from package c ies input capacitance ? 2100 ? v ge = 0v c oes output capacitance ? 99 ? pf v cc = 30v, see fig.7 c res reverse transfer capacitance ? 12 ? f = 1.0mhz t rr diode reverse recovery time ? 50 76 ns t j =25c see fig ?72110 t j =125c 14 i f = 8.0a i rr diode peak reverse recovery current ? 4.4 7.0 a t j =25c see fig ?5.98.8 t j =125c 15 v r = 200v q rr diode reverse recovery charge ? 130 200 nc t j =25c see fig ? 250 380 t j =125c 16 di/dt = 200a/ s di (rec)m /dt diode peak rate of fall of recovery ? 210 ? a/s t j =25c see fig during t b ?180? t j =125c 17

www.irf.com 3 0.1 1 10 100 f , frequency ( khz ) 0 5 10 15 20 25 30 35 40 45 50 l o a d c u r r e n t ( a ) for both: duty cycle : 50% tj = 125c tsink = 90c gate drive as specified power dissipation = 35w 7-68
9 60% of rated voltage i ideal diodes square wave: !" #" 1 10 100 5 6 7 8 9 10 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5s pulse width cc t = 25 c j o t = 150 c j o 1 10 100 1 10 v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c v = 15v 20s pulse width ge t = 25 c j o t = 150 c j o

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'&) (& $%&& & -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 4.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 10.5 c i = a 21 c i = a 42 c 25 50 75 100 125 150 0 10 20 30 40 50 t , case temperature ( c) maximum dc collector current(a) c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)

www.irf.com 5 '&) *") *'&) +,")* - +,") (& 0 20 40 60 80 100 120 q g, total gate charge (nc) 0 4 8 12 16 20 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ce = 400v i c = 21a 0 10 20 30 40 50 r g , gate resistance ( ? ) 3.6 3.8 4 4.2 4.4 4.6 4.8 5 t o t a l s w i c h i n g l o s s e s ( m j ) v ce = 800v v ge = 15v t j = 25c i c = 21a -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 1 10 100 t o t a l s w i t c h i n g l o s s e s ( m j ) r g = 10 ? v ge = 15v v cc = 800v i c = 42a i c = 21a i c = 10.5a 1 10 v ce , collector-toemitter-voltage(v) 0 500 1000 1500 2000 2500 3000 3500 4000 c a p a c i t a n c e ( p f ) cies coes cres v gs = 0v, f = 1 mhz c ies = c ge + c gd , c ce shorted c res = c gc c oes = c ce + c gc

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$%&&,)., +,") '& 0 10 20 30 40 50 i c , collecto-to-emitter (a) 2 4 6 8 10 12 14 16 t o t a l s w i c h i n g l o s s e s ( m j ) r g = 10 ? t j = 150c v ce = 800v v ge = 15v 1 10 100 1000 1 10 100 1000 1000 0 v = 20v t = 125 c ge j o v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c safe operating area

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8 www.irf.com same type device as d.u.t. d.u.t. 430f 80% of vce 60
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: t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1+5 s vce ic d t 90% vge + vge eoff = <& 6/=>:% " :
: vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery waveforms ic vpk 10% vcc irr 10% irr vc c trr qrr = trr tx id dt <& 6/=>: %" :
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www.irf.com 9 vg gate signal device under tes t current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v figure 19. clamped inductive load test circuit figure 20. pulsed collector current test circuit
figure 18e. macro waveforms for figure 18a's test circuit

10 www.irf.com notes: repetitive rating: v ge =20v; pulse width limited by maximum junction temperature (figure 20) v cc =80%(v ces ), v ge =20v, l=10h, r g = 10 ? (figure 19) pulse width 80s; duty factor 0.1%. pulse width 5.0s, single shot. to-247ad package is not recommended for surface mount application. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 07/04 data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on ir?s web site.
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as s e mb l y ye ar 0 = 200 0 as s e mb le d on ww 35, 2000 in the assembly line "h" example: t his is an irgp30b120kd-e lot code 5657 wi t h as s e mb l y part number dat e code international rectifier logo 035h 56 57 we e k 3 5 line h lot code note: "p" in as s embly line pos ition indicates "l ead- f r ee"
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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