0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 MMBTA70 features general purpose transistor absolute maximum ratings ta = 25 parameter symbol rating unit collector-emitter voltage v ceo -40 v emitter-base voltage v ebo -4 v collector current i c -100 ma total device dissipation fr-5 board (* 1) @t a =25 derate above 25 p d 225 1.8 mw mw/ thermal resistance, junction-to-ambient r ja 556 /w total device dissipation alumina substrate, (* 2) @t a =25 derate above 25 p d 300 2.4 mw mw/ thermal resistance, junction-to-ambient r ja 417 /w junction temperature t j 150 storage temperature t stg -55to+150 * 1. fr-5 = 1.0 0.75 0.062 in. * 2. alumina = 0.4 0.3 0.024 in. 99.5% alumina. electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-emitter breakdown voltage v (br)ceo i c =-1.0ma,i b =0 -40 v emitter-base breakdown voltage v (br)ebo i e = -100 a, i c =0 -4.0 v collector cutoff current i cbo v cb =-30v,i e = 0 -100 na dc current gain h fe i c =-5.0ma,v ce = -10 v 40 400 collector-emitter saturation voltage v ce( sat) i c =-10ma,i b = -1.0 ma -0.25 v current-gain-bandwidth product f t i c =-5.0ma,v ce = -10 v, f = 100 mhz 125 mhz output capacitance c obo v cb =-10v,i e = 0, f = 1.0 mhz 4.0 pf marking marking m2c product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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